Fairchild Semiconductor HUF75307D3, HUF75307D3S Datasheet

HUF75307P3, HUF75307D3, HUF75307D3S

	Data Sheet	December 2001

15A, 55V, 0.090 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75307.

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUF75307P3	TO-220AB	75307P
HUF75307D3	TO-251AA	75307D
HUF75307D3S	TO-252AA	75307D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.

Features

•15A, 55V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Models

-SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

D

G

S

Packaging

	JEDEC TO-220AB		JEDEC TO-251AA
		SOURCE	SOURCE
		DRAIN	DRAIN
		GATE	GATE
DRAIN
(FLANGE)			DRAIN
			(FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUF75307P3, HUF75307D3, HUF75307D3S Rev. B

HUF75307P3, HUF75307D3, HUF75307D3S

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
			UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VDSS	55	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VDGR	55	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	15	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	45	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	0.3	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . TL	300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

55

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 50V, VGS = 0V

-

-

1

µA

V

DS

= 45V, V

GS

= 0V, T = 150oC

-

-

250

µA

C

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Drain to Source On Resistance

rDS(ON)

ID = 15A, VGS = 10V (Figure 9)

-

0.075

0.090

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

Rθ JC

(Figure 3)

-

-

3.3

oC/W

Thermal Resistance Junction to Ambient

Rθ JA

TO-220AB

-

-

62

oC/W

TO-251AA, TO-252AA

-

-

100

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 30V, ID 15A,

-

-

60

ns

RL = 2.0Ω

, VGS = 10V,

Turn-On Delay Time

td(ON)

-

7

-

ns

RGS = 100Ω

Rise Time

tr

-

40

-

ns

Turn-Off Delay Time

td(OFF)

-

35

-

ns

Fall Time

tf

-

45

-

ns

Turn-Off Time

tOFF

-

-

100

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 30V,

-

16

20

nC

ID 15A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

-

9

11

nC

RL = 2.0Ω

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

Ig(REF) = 1.0mA

-

0.6

0.8

nC

(Figure13)

Gate to Source Gate Charge

Qgs

-

1.2

-

nC

Reverse Transfer Capacitance

Qgd

-

4

-

nC

©2001 Fairchild Semiconductor Corporation

HUF75307P3, HUF75307D3, HUF75307D3S Rev. B

HUF75307P3, HUF75307D3, HUF75307D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
	CAPACITANCE SPECIFICATIONS
	Input Capacitance	CISS	VDS = 25V, VGS = 0V,	-	250	-	pF
			f = 1MHz
	Output Capacitance	COSS		-	100	-	pF
			(Figure 12)
	Reverse Transfer Capacitance	CRSS		-	25	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Source to Drain Diode Voltage	VSD	ISD = 15A	-	-	1.25	V
Reverse Recovery Time	trr	ISD = 15A, dISD/dt = 100A/ s	-	-	45	ns
Reverse Recovered Charge	QRR	ISD = 15A, dISD/dt = 100A/ s	-	-	55	nC

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

	20
(A)	15
CURRENT
	10
, DRAIN	5
D
I
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE							FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
			TEMPERATURE				CASE TEMPERATURE
		2	DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
	IMPEDANCE
NORMALIZED			0.1
			0.05
			0.02
			0.01					PDM
		0.1
,	THERMAL							t1
Zθ JC
								t2
								NOTES:
				SINGLE PULSE				DUTY FACTOR: D = t1/t2
								PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01
		10-5		10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2001 Fairchild Semiconductor Corporation

HUF75307P3, HUF75307D3, HUF75307D3S Rev. B