Fairchild Semiconductor KA5Q1565RF, KA5Q1265RF, KA5Q12656RT, KA5Q0765RT Datasheet

www.fairchildsemi.com

KA5Q-SERIES

KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/

KA5Q1565RF

Fairchild Power Switch(FPS)

Features	Description
• Quasi Resonant Converter Controller	The Fairchild Power Switch(FPS) product family is specially
• Internal Burst Mode Controller for Stand-by Mode	designed for an off-line SMPS with minimal external
• Pulse by Pulse Current Limiting	components. The Fairchild Power Switch(FPS) consist of high
• Over Current Latch Protection	voltage power SenseFET and current mode PWM controller IC.
• Over Voltage Protection (Vsync: Min. 11V)	PWM controller features integrated fixed oscillator, under
• Internal Thermal Shutdown Function	voltage lock out, leading edge blanking, optimized gate turn-on/
• Under Voltage Lockout	turn-off driver, thermal shut down protection, over voltage
• Internal High Voltage Sense FET	protection, temperature compensated precision current sources
• Auto-Restart Mode	for loop compensation and fault protection circuit. compared to
	discrete MOSFET and controller or RCC switching converter
	solution, a Fairchild Power Switch(FPS) can reduce total
	component count, design size, and weight and at the same time
	increase & efficiency, productivity, and system reliability. It has
	a basic platform well suited for cost-effective design in quasi
	resonant converter as C-TV power supply.
	TO-220F-5L	TO-3PF-5L
	1	1
	1. Drain 2. GND 3. VCC 4. FB 5. Sync

Internal Block Diagram

VCC

DRAIN

3

1

+

+

-

32V +1%

Internal

VREF

-

-

BIAS

-

11V on

+

12V off

UVLO

15V/9V

Burst Mode

-

3.5V/1.25V

+

Ro

n

Ron

5

S

QB

SYNC

+

OSC

Rof

Normal Mode

-

R

Roff

4.6V/2.6V

VREF

LEB

Ifb

450ns

FEEDBACK 4

2.5R

-

+

R

Idelay

1V

+

Offset

-

+

+

Delay

Rsense

-

-

S

80ns

Q

7.5V

OLP

Power

OCL

1V

on

R

2

SOURCE

+

Reset

S

Thermal

Sync

Q

Shut Down

12V

-

OVP

R

Power on Reset

(VCC=6.5V)

Rev.1.0.3

©2003 Fairchild Semiconductor Corporation

KA5Q-SERIES

Absolute Maximum Ratings

(Ta=25° C, unless otherwise specified)

	Characteristic	Symbol	Value	Unit
	KA5Q0765RT
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	28	ADC
	Continuous Drain Current (Tc = 25° C)	ID	7.0	ADC
	Continuous Drain Current (Tc = 100° C)	ID	5.6	ADC
	Single Pulsed Avalanch Current(3)(Energy (2))	IAS(EAS)	20(570)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	40	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSync	-0.3 to 13	V
	Total Power Dissipation	PD	47	W
		Derating	0.37	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C
	Thermal Resistance	Rthjc	2.7	° C/W

KA5Q12656RT

	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	48	ADC
	Continuous Drain Current (Tc = 25° C)	ID	12	ADC
	Continuous Drain Current (Tc = 100° C)	ID	8.4	ADC
	Single Pulsed Avalanch Current(Energy (2))	IAS(EAS)	30(950)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	40	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSync	-0.3 to13	V
	Total Power Dissipation	PD	55	W
		Derating	0.4	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C
	Thermal Resistance	Rthjc	2.5	° C/W

Absolute Maximum Ratings (Continued)

2

				KA5Q-SERIES
	(Ta=25° C, unless otherwise specified)
	Characteristic	Symbol	Value	Unit
	KA5Q1265RF
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	48	ADC
	Continuous Drain Current (Tc = 25° C)	ID	12	ADC
	Continuous Drain Current (Tc = 100° C)	ID	8.4	ADC
	Single Pulsed Avalanch Current(Energy (2))	IAS(EAS)	33(950)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	40	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSync	-0.3 to 13	V
	Total Power Dissipation	PD	95	W
		Derating	0.76	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C
	Thermal Resistance	Rthjc	1.31	° C/W
	KA5Q1565RF
	Drain-Gate Voltage(RGS=1MΩ)	VDGR	650	V
	Gate-Source(GND) Voltage	VGS	±30	V
	Drain Current Pulsed(1)	IDM	60	ADC
	Continuous Drain Current (Tc = 25° C)	ID	15	ADC
	Continuous Drain Current (Tc = 100° C)	ID	12.0	ADC
	Single Pulsed Avalanch Current(Energy (2))	IAS(EAS)	36(1050)	A(mJ)
	Maximum Supply Voltage	VCC,MAX	40	V
	Input Voltage Range	VFB	-0.3 to VCC	V
		VSync	-0.3 to 13	V
	Total Power Dissipation	PD	98	W
		Derating	0.78	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C
	Thermal Resistance	Rthjc	1.28	° C/W

Note:

1.Repetitive rating : Pulse width limited by maximum junction temperature

2.L = 10mH, VDD =50V, RG = 27Ω , starting Tj = 25° C

3.L = 13uH, starting Tj = 25° C

3

KA5Q-SERIES

Electrical Characteristics (SFET part)

(Ta=25° C unless otherwise specified)

	Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
	KA5Q0765RT
	Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
			VDS=Max., Rating, VGS=0V	-	-	200	µ	A
	Zero Gate Voltage Drain Current	IDSS
			VDS=0.8Max., Rating,	-	-	300	µ	A
			VGS=0V, TC=85° C
	Static Drain-Source on Resistance(1)	RDS(on)	VGS=10V, ID=4.0A	-	1.3	1.6	Ω
	Input Capacitance	Ciss	VGS=0V, VDS=25V,	-	1110	-
	Output Capacitance	Coss		-	105	-
			f = 1MHz				pF
	Reverse Transfer Capacitance	Crss		-	50	-
	Turn on Delay Time	td(on)	VDD=0.5BVDSS, ID=7.0A	-	25	-
			(MOSFET switching
	Rise Time	tr		-	55	-
			time are essentially
	Turn Off Delay Time	td(off)		-	80	-
			independent of				nS
	Fall Time	tf	operating temperature)	-	50	-
	Total Gate Charge	Qg	VGS=10V, ID=7.0A,	-	57	74
	(Gate-Source+Gate-Drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-Source Charge	Qgs		-	9.3	-
			Essentially independent of				nC
	Gate-Drain (Miller) Charge	Qgd		-	29.3	-
			Operating temperature)
	KA5Q12656RT/KA5Q1265RF
	Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=50µ A	650	-	-	V
	Zero Gate Voltage Drain Current	IDSS	VDS=Max., Rating, VGS=0V	-	-	200	µ	A
			VDS=0.8Max., Rating,	-	-	300	µ	A
			VGS=0V, TC=85° C
	Static Drain-Source on Resistance (1)	RDS(on)	VGS=10V, ID=6A	-	0.7	0.9	Ω
	Input Capacitance	Ciss	VGS=0V, VDS=25V,	-	1820	-
	Output Capacitance	Coss		-	185	-
			f = 1MHz				pF
	Reverse Transfer Capacitance	Crss		-	32	-
	Turn on Delay Time	td(on)	VDD=0.5BVDSS, ID=12.0A	-	38	-
			(MOSFET switching
	Rise Time	tr		-	120	-
			time are essentially
	Turn Off Delay Time	td(off)		-	200	-
			independent of				nS
	Fall Time	tf	operating temperature)	-	100	-
	Total Gate Charge	Qg	VGS=10V, ID=12.0A,	-	60	78
	(Gate-Source+Gate-Drain)		VDS=0.5BVDSS(MOSFET
			Switching time are
	Gate-Source Charge	Qgs		-	10	-
			Essentially independent of				nC
	Gate-Drain (Miller) Charge	Qgd		-	30	-
			Operating temperature)

4

KA5Q-SERIES

Absolute Maximum Ratings (SFET Part)

(Ta=25° C, unless otherwise specified)

Characteristic		Symbol	Test condition	Min.	Typ.	Max.	Unit
KA5Q1565RF
Drain-Source Breakdown Voltage		BVDSS	VGS=0V, ID=50 A	650	-	-	V
			VDS=Max., Rating,	-	-	200	A
Zero Gate Voltage Drain Current		IDSS	VGS=0V
			VDS=0.8Max., Rating,	-	-	300	A
			VGS=0V, TC=85° C
Static Drain-Source on Resistance (Note)
		RDS(ON)	VGS=10V, ID=7.3A	-	0.5	0.65	W
Input Capacitance		Ciss	VGS=0V, VDS=25V,	-	2580	-
Output Capacitance		Coss		-	270	-	pF
			f=1MHz
Reverse Transfer Capacitance		Crss		-	50	-
Turn on Delay Time		td(on)	VDD=0.5BVDSS, ID=14.6A	-	50	-
			(MOSFET switching
Rise Time		tr		-	155	-
			time are essentially				nS
Turn Off Delay Time		td(off)		-	270	-
			independent of
Fall Time		tf		-	125	-
			operating temperature)
Total Gate Charge		Qg	VGS=10V, ID=14.6A,	-	90	117
(Gate-Source+Gate-Drain)			VDS=0.8BVDSS (MOSFET
							nC
			switching time are
Gate-Source Charge		Qgs		-	15	-
			essentially independent of
Gate-Drain (Miller) Charge		Qgd		-	45	-
			operating temperature)
Note:
1. Pulse test: Pulse width ≤ 300 S, duty cycle ≤		2%

5