Fairchild Semiconductor KBU8G, KBU8D, KBU8J, KBU8M, KBU8B Datasheet

Discrete POWER & Signal

Technologies

KBU8A - KBU8M

																				0.935(23.7)																			0.280(7.1)
									0.16(4.1)										0.895(22.7)																		0.260(6.6)
											0.14(3.6)
Features																														0.085(2.2)
																			45°											0.065(1.7)
• High surge current capability.												0.70(17.8)							+
																			+
												0.66(16.8)
									0.0760(19.3)										~ ~ +											0.455(11.3)
• Reliable construction technique.									MAX								–
																														0.405(10.3)
• Ideal for printed circuit board.																																										0.165(4.2)
																																										0.150(3.8)
						KBU			1.0(2.54)
									MIN																					0.260(6.8)
												0.220(5.6)																					0.180(4.5)
8.0 Ampere Silicon Bridge Rectifiers												0.180(4.6)																									0.052(1.3)
															Dimensions are in: inches (mm)																						0.048(1.2)
Absolute Maximum Ratings*						TA = 25°C unless otherwise noted
Symbol				Parameter														Value																	Units
IO		Average Rectified Current																	8.0																			A
			@ TA = 50°C
if(surge)		Peak Forward Surge Current																	300																			A
PD		Total Device Dissipation																	6.9																		W
			Derate above 25°C																55																mW/°C
RqJA		Thermal Resistance, Junction to Ambient,** per leg																	18																	°C/W
RqJL		Thermal Resistance, Junction to Lead,** per leg																	3.0																	°C/W
Tstg		Storage Temperature Range														-55 to +150																					°C
TJ		Operating Junction Temperature														-55 to +150																					°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.
Electrical Characteristics					TA = 25°C unless otherwise noted
	Parameter								Device																																	Units
					8A	8B		8D	8G						8J									8K										8M
Peak Repetitive Reverse Voltage					50	100		200	400				600									800											1000										V
Maximum RMS Bridge Input Voltage					35	70		140	280				420									560											700										V
DC Reverse Voltage			(Rated VR)		50	100		200	400				600									800											1000										V
Maximum Reverse Leakage,																																											μA
total bridge @ rated VR			°						10
			TA = 25 C						500																																		μA
			TA = 100°C
Maximum Forward Voltage Drop,
per bridge			@ 8.0 A						1.0																																		V

KBU8M - KBU8A

ã1999 Fairchild Semiconductor Corporation

KBU8A-KBU8M, Rev. A