Fairchild Semiconductor KSE171, KSE170, KSE172 Datasheet

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KSE170/171/172

Low Power Audio Amplifier

Low Current, High Speed Switching Applications

PNP Epitaxial Silicon Transistor

1

 

 

TO-126

 

 

 

 

1. Emitter 2.Collector 3.Base

 

 

 

 

 

 

 

Absolute Maximum Ratings TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

 

 

 

Value

 

 

 

Units

VCBO

Collector-Base Voltage

: KSE170

 

 

- 60

 

 

 

 

V

 

 

 

 

: KSE171

 

 

- 80

 

 

 

 

V

 

 

 

 

: KSE172

 

 

- 100

 

 

 

 

V

 

 

VCEO

Collector-Emitter Voltage

: KSE170

 

 

- 40

 

 

 

 

V

 

 

 

 

: KSE171

 

 

- 60

 

 

 

 

V

 

 

 

 

: KSE172

 

 

- 80

 

 

 

 

V

 

 

VEBO

Emitter-Base Voltage

 

 

 

- 7

 

 

 

 

V

 

 

IC

Collector Current (DC)

 

 

 

- 3

 

 

 

 

A

 

 

ICP

Collector Current (Pulse)

 

 

 

- 6

 

 

 

 

A

 

 

IB

Base Current

 

 

 

- 1

 

 

 

 

A

 

 

PC

Collector Dissipation (TC=25° C)

 

 

 

12.5

 

 

 

 

W

 

 

 

Collector Dissipation (Ta=25° C)

 

 

 

1.5

 

 

 

 

W

 

 

TJ

Junction Temperature

 

 

 

150

 

 

 

 

° C

TSTG

Storage Temperature

 

 

 

- 65 ~ 150

 

 

 

 

° C

Electrical Characteristics TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Condition

 

Min.

 

Max.

 

Units

 

BVCEO

Collector-Emitter Breaksown Voltage

IC = 10mA, IB = 0

 

 

 

-40

 

 

 

 

 

V

 

: KSE170

 

 

 

 

 

 

 

 

 

: KSE171

 

 

 

 

-60

 

 

 

 

 

V

 

: KSE172

 

 

 

 

-80

 

 

 

 

 

V

ICBO

Collector Cut-off Current : KSE170

VCB = - 60V, IB = 0

 

 

 

 

 

-0.1

 

 

A

 

 

: KSE171

VCB = - 80V, IE = 0

 

 

 

 

 

-0.1

 

 

A

 

: KSE172

VCB = - 100V, IE = 0

 

 

 

 

 

-0.1

 

 

A

 

: KSE170

VCB = - 60V, IE = 0, TC = 150° C

 

 

 

-0.1

 

mA

 

: KSE171

VCB = - 80V, IE = 0, TC = 150° C

 

 

 

-0.1

 

mA

 

: KSE172

VCB = - 100V, IE = 0, TC = 150° C

 

 

 

-0.1

 

mA

IEBO

Emitter Cut-off Current

VBE = - 7V, IC = 0

 

 

 

 

 

-0.1

 

 

A

 

hFE

DC Current Gain

VCE = - 1V, IC = - 100mA

 

 

 

50

 

250

 

 

 

 

 

 

VCE = - 1V, IC = - 500mA

 

 

 

30

 

 

 

 

 

 

 

 

 

VCE = - 1V, IC = - 1.5A

 

 

 

12

 

 

 

 

 

 

 

VCE(sat)

Collector-Emitter Saturation Voltage

IC = - 500mA, IB = - 50mA

 

 

 

 

 

-0.3

 

 

V

 

 

 

IC = - 1.5A, IB = - 150mA

 

 

 

 

 

-0.9

 

 

V

 

 

IC = - 3A, IB = - 600mA

 

 

 

 

 

-1.7

 

 

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = - 1.5A, IB = - 150mA

 

 

 

 

 

-1.5

 

 

V

 

 

 

IC = - 3A, IB = - 600mA

 

 

 

 

 

-2.0

 

 

V

VBE(on)

Base-Emitter On Voltage

VCE = - 1V, IC = - 500mA

 

 

 

 

 

-1.2

 

 

V

 

fT

Current Gain Bandwidth Product

VCE = - 10V, IC = - 100mA

 

 

 

50

 

 

 

 

MHz

 

Cob

Output Capacitance

VCB = - 10V, IE = 0, f = 0.1MHz

 

 

 

50

 

pF

 

KSE170/171/172

©2001 Fairchild Semiconductor Corporation

Rev. A1, January 2001

Fairchild Semiconductor KSE171, KSE170, KSE172 Datasheet

Typical Charactristics

 

1000

 

 

 

VCE = -1V

GAIN

 

 

, DC CURRENT

100

 

 

 

FE

 

 

h

 

 

 

10

-1

 

-0.1

 

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

 

1000

 

 

 

 

 

 

 

f=0.1MHZ

 

 

 

 

IE=0

CAPACITANCE

100

 

 

 

 

 

 

 

[pF],

10

 

 

 

 

 

 

 

ob

 

 

 

 

C

 

 

 

 

 

1

-1

-10

-100

 

-0.1

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector Output Capacitance

 

1000

 

OFF TIME

 

tSTG

 

 

[ns], TURN

100

tF

 

 

 

STG

 

 

,t

 

 

F

 

 

t

 

 

 

10

-1

 

-0.1

 

 

IC[A], COLLECTOR CURRENT

Figure 5. Turn Off Time

VOLTAGE

-2.0

 

 

 

 

 

-1.8

 

 

 

 

 

 

 

 

 

 

 

SATURATION

-1.6

 

 

 

 

 

-1.4

 

 

 

 

 

 

 

 

 

 

 

 

-1.2

 

 

 

 

 

 

-1.0

 

VBE(sat) IC/IB=10

 

 

 

 

 

 

 

 

 

(sat)[V],

-0.8

 

 

 

 

 

-0.6

 

VBE@VCE= -1V

 

 

 

 

 

 

 

 

 

CE

-0.4

 

 

 

IC/IB=5

 

V

 

 

IC/IB=10

 

 

(sat),

-0.2

 

 

 

 

VCE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

BE

-0.0

 

-0.1

-1

-10

-100

V

-0.01

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

 

1000

 

 

 

TIME

100

 

tR

 

TURN ON

 

 

 

 

 

tD

 

[ns],

10

 

 

 

R

 

 

 

,t

 

 

 

 

D

 

 

 

 

t

 

 

 

 

 

1

-0.1

-1

-10

 

-0.01

 

 

IC[A], COLLECTOR CURRENT

 

Figure 4. Turn On Time

 

-10

 

 

 

CURRENT

 

 

 

100

 

 

500

 

 

 

s

 

 

 

 

 

 

s

-1

DC

50ms

 

 

 

 

 

 

 

COLLECTOR

-0.1

 

 

 

 

 

 

 

[A],

 

 

KSE170

 

 

 

KSE171

 

C

 

 

 

I

 

 

KSE172

 

 

 

 

 

 

 

 

VCEMAX.

 

 

-0.01

-10

 

-100

 

-1

 

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Safe Operating Area

KSE170/171/172

©2001 Fairchild Semiconductor Corporation

Rev. A1, January 2001

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