PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE
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DESCRIPTION
SCHEMATIC
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ANODE |
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OUTPUT |
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TERM. |
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CATHODE |
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OUTPUT |
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TERM. |
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The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
•≤ 100Ω to ≥ 300 MΩ
•≥ 99.9% linearity
•≤ 15 pF shunt capacitance
•≥ 100 GΩ I/O isolation resistance
As an analog switch
•Extremely low offset voltage
•60 Vpk-pk signal capability
•No charge injection or latch-up
•ton, toff ≤ 15 µS
•UL recognized (File #E90700)
•VDE recognized (File #E94766)
–Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
•Isolated variable attenuator
•Automatic gain control
•Active filter fine tuning/band switching
As an analog switch –
•Isolated sample and hold circuit
•Multiplexed, optically isolated A/D conversion
© 2002 Fairchild Semiconductor Corporation |
Page 1 of 9 |
6/24/02 |
PHOTO FET OPTOCOUPLERS
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H11F1 |
H11F2 |
H11F3 |
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Absolute Maximum Ratings (TA = 25°C unless otherwise specified) |
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Parameter |
Symbol |
Device |
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Value |
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Units |
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TOTAL DEVICE |
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Storage Temperature |
TSTG |
All |
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-55 to +150 |
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°C |
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Operating Temperature |
TOPR |
All |
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-55 to +100 |
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°C |
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Lead Solder Temperature |
TSOL |
All |
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260 for 10 sec |
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°C |
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EMITTER |
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Continuous Forward Current |
IF |
All |
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60 |
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mA |
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Reverse Voltage |
VR |
All |
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5 |
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V |
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Forward Current - Peak (10 µs pulse, 1% duty cycle) |
IF(pk) |
All |
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1 |
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A |
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LED Power Dissipation 25°C Ambient |
PD |
All |
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100 |
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mW |
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Derate Linearly From 25°C |
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1.33 |
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mW/°C |
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DETECTOR |
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Detector Power Dissipation @ 25°C |
PD |
All |
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300 |
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mW |
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Derate linearly from 25°C |
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4.0 |
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mW/°C |
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Breakdown Voltage (either polarity) |
BV4-6 |
H11F1, H11F2 |
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±30 |
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V |
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H11F3 |
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±15 |
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V |
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Continuous Detector Current (either polarity) |
I4-6 |
All |
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±100 |
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mA |
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ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter |
Test Conditions |
Symbol |
Device |
Min |
Typ* |
Max |
Unit |
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EMITTER |
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Input Forward Voltage |
IF = 16 mA |
VF |
All |
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1.3 |
1.75 |
V |
Reverse Leakage Current |
VR = 5 V |
IR |
All |
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10 |
µA |
Capacitance |
V = 0 V, f = 1.0 MHz |
CJ |
All |
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50 |
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pF |
OUTPUT DETECTOR |
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Breakdown Voltage |
I4-6 = 10µA, IF = 0 |
BV4-6 |
H11F1, H11F2 |
30 |
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V |
Either Polarity |
H11F3 |
15 |
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Off-State Dark Current |
V4-6 = 15 V, IF = 0 |
I4-6 |
All |
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50 |
nA |
V4-6 = 15 V, IF = 0, TA = 100°C |
All |
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50 |
µA |
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Off-State Resistance |
V4-6 = 15 V, IF = 0 |
R4-6 |
All |
300 |
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MΩ |
Capacitance |
V4-6 = 15 V, IF = 0, f = 1MHz |
C4-6 |
All |
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15 |
pF |
© 2002 Fairchild Semiconductor Corporation |
Page 2 of 9 |
6/24/02 |
PHOTO FET OPTOCOUPLERS
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H11F1 |
H11F2 |
H11F3 |
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ISOLATION CHARACTERISTICS |
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Parameter |
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Test Conditions |
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Symbol |
Min |
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Typ* |
Max |
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Units |
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Input-Output Isolation Voltage |
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f = 60Hz, t = 1 min. |
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VISO |
5300 |
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Vac (rms) |
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Isolation Resistance |
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V |
= 500 VDC |
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R |
1011 |
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Ω |
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I-O |
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ISO |
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Isolation Capacitance |
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VI-O = 0, f = 1.0 MHz |
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CISO |
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2 |
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pF |
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TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) |
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DC Characteristics |
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Test Conditions |
Symbol |
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Device |
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Min |
Typ* |
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Max |
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Units |
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H11F1 |
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200 |
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Ω |
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On-State Resistance |
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IF = 16 mA, I4-6 = 100 µA |
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R4-6 |
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H11F2 |
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330 |
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H11F3 |
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470 |
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H11F1 |
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200 |
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Ω |
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On-State Resistance |
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IF = 16 mA, I6-4 = 100 µA |
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R6-4 |
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H11F2 |
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330 |
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H11F3 |
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470 |
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Resistance, non-linearity |
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IF = 16mA, I4-6 = 25 µA RMS, |
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All |
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0.1 |
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and assymetry |
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f = 1kHz |
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AC Characteristics |
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Test Conditions |
Symbol |
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Device |
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Min |
Typ* |
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Max |
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Units |
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Turn-On Time |
RL = 50Ω, IF = 16mA, V4-6 = 5V |
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ton |
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All |
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25 |
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µS |
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Turn-Off Time |
RL = 50Ω, IF = 16mA, V4-6 = 5V |
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toff |
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All |
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25 |
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µS |
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© 2002 Fairchild Semiconductor Corporation |
Page 3 of 9 |
6/24/02 |
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