HUF76413D3S
©2001 Fairchild Semiconductor Corpo ration HUF76413D3, HUF76413D3S Rev. B
HUF76413D3, HUF76413D3S
20A, 60V, 0.056 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Features
• Ultra Low On-Resistance
-r
DS(ON)
= 0.049Ω, V
GS
= 10V
-r
DS(ON)
= 0.056Ω, V
GS
= 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-251AA JEDEC TO-252AA
HUF76413D3
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
HUF76413D3S
GATE
SOURCE
DRAIN
(FLANGE)
D
G
S
PART NUMBER PACKAGE BRAND
HUF76413D3 TO-251AA 76413D
HUF76413D3S TO-252AA 76413D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76413D3ST.
HUF76413D3, HUF76413D3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60 V
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±16 V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
20
20
15
15
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
0.4
W
W/
o
C
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in “Absolute Maximum Rati ngs” may cause per man ent dama ge to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet December 2001
©2001 Fairchild Semiconductor Corpo ration HUF76413D3, HUF76413D3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12) 60 - - V
I
D
= 250µA, V
GS
= 0V , T
C
= -40
o
C (Figure 12) 55 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 55V, V
GS
= 0V - - 1 µA
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C - - 250 µA
Gate to Source Leakage Current I
GSS
V
GS
= ±16V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 11) 1 - 3 V
Drain to Source On Resistance r
DS(ON)
I
D
= 20A, V
GS
= 10V (Figures 9, 10) - 0.041 0.049 Ω
I
D
= 15A, V
GS
= 5V (Figure 9) - 0.048 0.056 Ω
I
D
= 15A, V
GS
= 4.5V (Figure 9) - 0.051 0.061 Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
θJC
TO-251 and TO-252 - - 2.5
o
C/W
Thermal Resistance Junction to
Ambient
R
θJA
- - 100
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time t
ON
V
DD
= 30V, I
D
= 15A
V
GS
= 4.5V, R
GS
= 16Ω
(Figures 15, 21, 22)
- - 273 ns
Turn-On Delay Time t
d(ON)
-10-ns
Rise Time t
r
- 172 - ns
Turn-Off Delay Time t
d(OFF)
-21-ns
Fall Time t
f
-55-ns
Turn-Off Time t
OFF
- - 114 ns
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
ON
V
DD
= 30V, I
D
= 20A
V
GS
= 10V,
R
GS
= 18Ω
(Figures 16, 21, 22)
- - 63 ns
Turn-On Delay Time t
d(ON)
-6-ns
Rise Time t
r
-36-ns
Turn-Off Delay Time t
d(OFF)
-48-ns
Fall Time t
f
-42-ns
Turn-Off Time t
OFF
- - 135 ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 10V V
DD
= 30V,
I
D
= 15A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-1720nC
Gate Charge at 5V Q
g(5)
V
GS
= 0V to 5V - 9 11 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 1V - 0.6 0.7 nC
Gate to Source Gate Charge Q
gs
-2-nC
Gate to Drain “Miller” Charge Q
gd
-5-nC
CAPACITANCE SPECIFICATIONS
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
- 645 - pF
Output Capacitance C
OSS
- 190 - pF
Reverse Transfer Capacitance C
RSS
-40-pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 15A - - 1.25 V
I
SD
= 8A - - 1.0 V
Reverse Recovery Time t
rr
I
SD
= 15A, dI
SD
/dt = 100A/µs--72ns
Reverse Recovered Charge Q
RR
I
SD
= 15A, dI
SD
/dt = 100A/µs - - 185 nC
HUF76413D3, HUF76413D3S
©2001 Fairchild Semiconductor Corpo ration HUF76413D3, HUF76413D3S Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERA TURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 17
5
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
10
15
20
25
25 50 75 100 125 150 17
5
0
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
THERMAL IMPEDANCE
100
500
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
HUF76413D3, HUF76413D3S
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