Fairchild Semiconductor KSP25, KSP27, KSP26 Datasheet

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KSP25/26/27

Darlington Transistor

• Collector-Emitter Voltage: VCES=KSP25: 40V

KSP26: 50V

KSP27: 60V

• Collector Power Dissipation: PC (max) =625mW

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings Ta=25° C unless otherwise noted

Symbol	Parameter	Value	Units
VCES	Collector-Emitter Voltage	40	V
	: KSP25	40	V
	: KSP26	50	V
	: KSP27	60	V
VEBO	Emitter-Base Voltage	10	V
IC	Collector Current	500	mA
PC	Collector Power Dissipation	625	mW
TJ	Junction Temperature	150	° C
TSTG	Storage Temperature	-55~150	° C

Electrical Characteristics Ta=25° C unless otherwise noted

Symbol	Parameter	Test Condition	Min.	Max.	Units
BVCES	Collector-Emitter Breakdown Voltage	IC=100 A, IE=0	40		V
	: KSP25		40		V
	: KSP26		50		V
	: KSP27		60		V
BVCBO	Collector-Base Breakdown Voltage	IC=100 A, IE=0	40		V
	: KSP25		40		V
	: KSP26		50		V
	: KSP27		60		V
ICBO	Collector Cut-off Current	VCE=30V, IE=0		100	nA
	: KSP25	VCE=30V, IE=0		100	nA
	: KSP26	VCE=40V, IE=0		100	nA
	: KSP27	VCE=50V, IE=0		100	nA
IEBO	Emitter Cut-off Current	VEB=10V, IB=0		100	nA
hFE	* DC Current Gain	VCE=5V, IC=10mA	10K
		VCE=5V, IC=100mA	10K
VCE (sat)	* Collector-Emitter Saturation Voltage	IC=100mA, IB=0.1mA		1.5	V
VBE (on)	* Base-Emitter On Voltage	VCE=5V, IC=100mA		2	V

* Pulse Test: PW≤ 300 s, Duty Cycle≤ 2%

KSP25/26/27

Rev. A2, September 2002

Typical Characteristics

Figure 1. DC current Gain

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

KSP25/26/27

Rev. A2, September 2002

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