KST92/93
KST92/93
High Voltage Transistor |
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2 |
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1 |
SOT-23 |
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PNP Epitaxial Silicon Transistor |
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1. Base 2. Emitter 3. Collector |
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Absolute Maximum Ratings Ta=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
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Collector Base Voltage |
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-300 |
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V |
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: KST92 |
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: KST93 |
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-200 |
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V |
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VCEO |
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Collector-Emitter Voltage |
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-300 |
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V |
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: KST92 |
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: KST93 |
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-200 |
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V |
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VEBO |
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Emitter-Base Voltage |
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-5 |
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V |
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IC |
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Collector Current |
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-500 |
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mA |
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PC |
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Collector Power Dissipation |
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350 |
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mW |
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TSTG |
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Storage Temperature |
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150 |
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° C |
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RTH(j-a) |
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Thermal Resistance junction to Ambient |
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357 |
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° C/W |
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• Refer to KSP92/93 for |
graphs |
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Electrical Characteristics Ta=25° C unless otherwise noted |
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Symbol |
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Parameter |
Test Condition |
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Min. |
Max. |
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Units |
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BVCBO |
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Collector-Base Breakdown Voltage |
IC= -100 A, IE=0 |
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-300 |
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V |
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: KST92 |
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: KST93 |
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-200 |
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V |
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BVCEO |
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* Collector-Emitter Breakdown Voltage |
IC= -1mA, IB=0 |
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-300 |
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V |
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: KST92 |
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: KST93 |
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-200 |
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V |
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BVEBO |
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Emitter-Base Breakdown Voltage |
IE= -100 A, IC=0 |
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-5 |
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V |
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ICBO |
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Collector Cut-off Current |
VCB= -200V, IE=0 |
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-0.25 |
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A |
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: KST92 |
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: KST93 |
VCB= -160V, IE=0 |
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-0.25 |
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A |
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IEBO |
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Emitter Cut-off Current |
VEB= -5V, IC=0 |
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-0.1 |
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A |
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hFE |
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* DC Current Gain |
VCE= -10V, IC= -1mA |
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25 |
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VCE= -10V, IC= -10mA |
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40 |
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VCE= -10V, IC= -30mA |
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25 |
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VCE (sat) |
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* Collector-Emitter Saturation Voltage |
IC= -20mA, IB= -2mA |
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-0.5 |
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V |
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VBE (sat) |
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* Base-Emitter Saturation Voltage |
IC= -20mA, IB= -2mA |
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-0.9 |
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V |
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Cob |
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Output Capacitance |
VCB= -20V, IE=0 |
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6 |
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pF |
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: KST92 |
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: KST93 |
f=1MHz |
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8 |
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pF |
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fT |
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Current Gain Bandwidth Product |
VCE= -20V, IC= -10mA |
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50 |
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MHz |
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f=100MHz |
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* Pulse Test: PW≤ |
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300 s, Duty Cycle≤ 2% |
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©2003 Fairchild Semiconductor Corporation |
Rev. B2, January 2003 |
Marking Code
Type |
KST92 |
KST93 |
Mark |
2D |
2E |
Marking
2D
KST92/93
©2003 Fairchild Semiconductor Corporation |
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Rev. B2, January 2003 |
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