Fairchild Semiconductor H11C3, H11C2, H11C6, H11C5, H11C4 Datasheet

...
0 (0)
Fairchild Semiconductor H11C3, H11C2, H11C6, H11C5, H11C4 Datasheet

PHOTO SCR OPTOCOUPLERS

H11C1

H11C2

H11C3

H11C4

H11C5

H11C6

 

PACKAGE

 

 

SCHEMATIC

 

 

 

 

ANODE 1

6

GATE

6

6

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

CATHODE 2

5

ANODE

 

 

 

 

 

 

 

 

1

 

N/C 3

4

CATHODE

 

 

 

 

 

 

6

 

 

 

 

 

 

1

DESCRIPTION

The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package

FEATURES

High efficiency, low degradation, liquid epitaxial LED

Underwriters Laboratory (UL) recognized fl File #E90700

VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300)

200V/400V Peak blocking voltage

High isolation voltage - 5300V AC (RMS)

APPLICATIONS

Low power logic circuits

Telecommunications equipment

Portable electronics

Solid state relays

Interfacing coupling systems of different potentials and impedances.

10 A, T2L compatible, solid state relay

25 W logic indicator lamp driver

200 V symmetrical transistor coupler (H11C1, H11C2, H11C3)

400 V symmetrical transistor coupler (H11C4, H11C5, H11C6)

© 2003 Fairchild Semiconductor Corporation

Page 1 of 11

3/19/03

PHOTO SCR OPTOCOUPLERS

H11C1

H11C2

H11C3

H11C4

H11C5

H11C6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

Symbol

Device

 

Value

Units

 

 

 

 

 

 

 

 

 

 

TOTAL DEVICE

 

 

 

 

 

 

 

 

Storage Temperature

 

 

TSTG

All

 

-55 to +150

°C

 

Operating Temperature

 

 

TOPR

All

 

-55 to +100

°C

 

Lead Solder Temperature

 

TSOL

All

 

260 for 10 sec

°C

 

EMITTER

 

 

 

 

 

 

 

 

Continuous Forward Current

 

IF

All

 

60

mA

 

Reverse Voltage

 

 

VR

All

 

6

V

 

Forward Current - Peak (1 µs pulse, 300 pps)

 

IF(pk)

All

 

3.0

A

 

LED Power Dissipation

 

 

PD

All

 

100

mW

 

 

 

 

 

 

 

 

Derate above 25°C

 

 

 

1.33

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DETECTOR

 

 

 

 

 

 

 

 

Power Dissipation (ambient)

 

PD

All

 

400

mW

 

 

 

 

 

 

 

 

Derate linearly above 25°C ambient

 

 

5.3

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Power Dissipation (case)

 

PD

All

 

1

W

 

 

 

 

 

 

 

 

Derate linearly above 25°C case

 

 

13.3

mW/°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak Reverse Gate Voltage

 

VGR

All

 

6

V

 

RMS On-State Current

 

 

IDM (RMS)

All

 

300

mA

 

Peak On-State Current (100 µS, 1% duty cycle)

IDM (Peak)

All

 

10

A

 

Surge Current (10ms)

 

 

IDM (Surge)

All

 

5

A

 

Peak Forward Voltage

 

 

VDM

H11C1, H11C2, H11C3

200

V

 

Peak Forward Voltage

 

 

VDM

H11C4, H11C5, H11C6

400

V

 

© 2003 Fairchild Semiconductor Corporation

Page 2 of 11

3/19/03

PHOTO SCR OPTOCOUPLERS

H11C1

H11C2

H11C3

H11C4

H11C5

H11C6

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Test Conditions

 

Symbol

 

Device

Min

Typ*

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Forward

 

IF = 10 mA

 

VF

 

All

 

 

1.2

 

1.5

 

V

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Leakage

 

VR = 3 V

 

IR

 

All

 

 

 

 

10

 

µA

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

VF = 0 V, f = 1.0 MHz

 

CJ

 

All

 

 

50

 

 

 

pF

DETECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Off-State Voltage

RGK = 10kΩ, TA = 100°C, ID = 50µA

 

VDM

 

H11C1, H11C2, H11C3

200

 

 

 

 

 

V

RGK = 10kΩ, TA = 100°C, ID = 150µA

 

 

H11C4, H11C5, H11C6

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Voltage

RGK = 10kΩ,TA = 100°C, IR = 50µA

 

VRM

 

H11C1, H11C2, H11C3

200

 

 

 

 

 

V

RGK = 10kΩ,TA = 100°C, IR = 150µA

 

 

H11C4, H11C5, H11C6

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

On-State Voltage

 

ITM = 300 mA

 

VTM

 

All

 

 

1.2

 

1.3

 

V

 

VDM = 200V, TA = 100°C, IF = 0 mA,

 

 

 

H11C1, H11C2, H11C3

 

 

 

 

50

 

µA

Off-State Current

 

RGK = 10kΩ

 

IDM

 

 

 

 

 

 

 

 

 

 

VDM = 400V, TA = 100°C, IF = 0 mA,

 

 

H11C4, H11C5, H11C6

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RGK = 10kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

VRM = 200 V, TA = 100 °C, IF = 0 mA,

 

 

 

H11C1, H11C2, H11C3

 

 

 

 

50

 

 

Reverse Current

 

RGK = 10kΩ

 

IRM

 

 

 

 

 

 

 

 

 

µA

VRM = 400 V, TA = 100 °C, IF = 0 mA,

 

 

H11C4, H11C5, H11C6

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

RGK = 10kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristics

 

Test Conditions

 

Symbol

 

Device

 

Min

 

Typ*

 

Max

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H11C1,H11C2,

 

 

 

 

 

20

 

 

 

 

VAK = 50 V, RGK = 10 kΩ

 

 

 

H11C4, H11C5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Current to Trigger

 

 

IFT

 

H11C3, H11C6

 

 

 

 

 

30

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H11C1,H11C2,

 

 

 

 

 

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VAK = 100 V, RGK = 27 kΩ

 

 

 

H11C4, H11C5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H11C3, H11C6

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Coupled dv/dt, input to

 

 

dv/dt

 

ALL

 

500

 

 

 

 

 

V/µS

output (figure 8)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Typical values at TA = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

© 2003 Fairchild Semiconductor Corporation

Page 3 of 11

3/19/03

PHOTO SCR OPTOCOUPLERS

H11C1

H11C2

H11C3

H11C4

H11C5

H11C6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISOLATION CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Test Conditions

 

Symbol

Min

Typ*

Max

Units

 

 

 

 

 

 

 

 

 

 

Isolation Voltage

 

 

(t = 1 min.) (note 1)

 

VISO

5300

 

 

V

Isolation Resistance

 

 

(note 1) (V

= 500 VDC)

 

R

1011

 

 

 

 

 

I-O

 

 

ISO

 

 

 

 

Isolation Capacitance

 

 

(note 1) (f = 1 MHz, VI-O = 0)

 

CI-O

 

0.8

 

pF

*Typical values at TA = 25°C

Note

1. For this test, LED pins 1 and 2 are common, and SCR pins 4, 5 and 6 are common.

© 2003 Fairchild Semiconductor Corporation

Page 4 of 11

3/19/03

Loading...
+ 7 hidden pages