Fairchild Semiconductor KBP10M, KBP08M, KBP02M, KBP005M Datasheet

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Fairchild Semiconductor KBP10M, KBP08M, KBP02M, KBP005M Datasheet

KBP005M/3N246 - KBP10M/3N252

Features

Surge overload rating: 50 amperes peak.

Reliable low cost construction utilizing molded plastic technique.

KBPM

1.5 Ampere Bridge Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

IO

Average Rectified Current

 

@ TA = 50°C

if(surge)

Peak Forward Surge Current

PD

Total Device Dissipation

 

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient,** per leg

Tstg

Storage Temperature Range

TJ

Operating Junction Tem perature

0.125 X 45O

 

0.600

(15.2)

 

 

 

 

(3.2) Typ

 

 

 

 

 

 

0.560

(14.3)

 

 

 

 

 

 

 

 

 

 

 

0.460 (11.7)

 

 

 

 

 

 

0.500 (12.7)

0.420

(10.7)

 

 

 

 

 

 

0.460

(11.7)

 

 

+

~

~

-

 

 

0.600 Min

 

 

 

 

 

 

 

 

 

Min

 

 

 

 

 

 

 

 

0.500

(15.2)

 

 

 

 

 

 

 

 

 

(12.7)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.034

(8.6)

 

 

 

 

 

 

 

0.160

0.028

(7.6)

 

 

0.060 Typ

 

 

 

 

(4.1)

 

 

 

 

 

 

 

 

0.140

(3.6)

 

 

 

 

(1.52)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dimensions are in: inches (mm)

Value

Units

1.5

A

50

A

3.5

W

25

mW/°C

40

°C/W

-55 to +165

°C

-55 to +165

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

Parameter

 

 

 

Device

 

 

 

Units

 

005M

01M

02M

04M

06M

08M

10M

 

 

 

246

247

248

249

250

251

252

 

Peak Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Bridge Input Voltage

35

70

140

280

420

560

700

V

DC Reverse Voltage

(Rated VR)

50

100

200

400

600

800

1000

V

Maximum Reverse Leakage,

 

 

 

5.0

 

 

 

 

total bridge @ rated VR TA = 25°C

 

 

 

 

 

 

μ

 

 

 

500

 

 

 

A

 

TA = 100°C

 

 

 

 

 

 

μA

Maximum Forward Voltage Drop,

 

 

 

 

 

 

 

 

per bridge

@ 1.0 A

 

 

 

1.0

 

 

 

V

 

@ 3.14 A

 

 

 

1.3

 

 

 

V

I t rating for fusing

t < 8.35 ms

 

 

 

10

 

 

 

A Sec

Typical Junction Capacitance, per leg

 

 

 

15

 

 

 

pF

VR = 4.0 V, f = 1.0 MHz

 

 

 

 

 

 

 

 

KBP10M/3N252 - KBP005M/3N246

ã1998 Fairchild Semiconductor Corporation

KBP005M/3N246-KBP10M/3N252, Rev. A

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