Fairchild Semiconductor KA5H0365R, KA5H0380R, KA5M0380R, KA5M0365R, KA5L0380R Datasheet

www.fairchildsemi.com

KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS)

	Features	Description
	• Precision Fixed Operating Frequency (100/67/50kHz)	The Fairchild Power Switch(FPS) product family is specially
	• Low Start-up Current(Typ. 100uA)	designed for an off-line SMPS with minimal external
	• Pulse by Pulse Current Limiting	components. The Fairchild Power Switch(FPS) consists of a
	• Over Current Protection	high voltage power SenseFET and a current mode PWM IC.
	• Over Voltage Protection (Min. 25V)	Included PWM controller integrates the fixed frequency
	• Internal Thermal Shutdown Function	oscillator, the under voltage lock-out, the leading edge
	• Under Voltage Lockout	blanking, the optimized gate turn-on/turn-off driver, the
	• Internal High Voltage Sense FET	thermal shutdown protection, the over voltage protection,
	• Auto-Restart Mode	and the temperature compensated precision current sources
		for the loop compensation and the fault protection circuitry.
	Applications	Compared to a discrete MOSFET and a PWM controller or
		an RCCsolution, a Fairchild Power Switch(FPS) can reduce
	• SMPS for VCR, SVR, STB, DVD & DVCD
		the total component count, design size and weight and at the
	• SMPS for Printer, Facsimile & Scanner	same time increase efficiency, productivity, and system
	• Adaptor for Camcorder	reliability. It has a basic platform well suited for the cost
		effective design in either a flyback converter or a forward
		converter
		TO-220F-4L	8-DIP
		1	1.6.7.8 Drain
			2. GND
		1. GND 2. Drain 3. VCC 4. FB	3. VCC
			4. FB 5. NC

Internal Block Diagram

#3 VCC					#2 DRAIN
32V			5V	Internal
(*#3 VCC)			Vref	bias	SFET
				Good	(*#1.6.7.8 DRAIN)
				logic
			OSC
		9V		S
5µ A		1mA		R Q
#4 FB		2.5R	−	L.E.B
			+
		1R
(*#4 FB)	+			0.1V
7.5V	−			S	#1 GND
	+	Thermal S/D		R Q
					(*#2 GND)
27V	−			Power on reset
		OVER VOLTAGE S/D
*Asterisk - KA5M0365RN, KA5L0365RN

Rev.1.0.5

©2002 Fairchild Semiconductor Corporation

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25° C, unless otherwise specified)

Characteristic		Symbol	Value	Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage		VD,MAX	650	V
Drain-Gate Voltage (RGS=1MΩ )		VDGR	650	V
Gate-Source (GND) Voltage		VGS	± 30	V
Drain Current Pulsed (1)		IDM	12.0	ADC
Continuous Drain Current (TC=25° C)		ID	3.0	ADC
Continuous Drain Current (TC=100° C)		ID	2.4	ADC
Single Pulsed Avalanche Energy (2)		EAS	358	mJ
Maximum Supply Voltage		VCC,MAX	30	V
Analog Input Voltage Range		VFB	-0.3 to VSD	V
Total Power Dissipation		PD	75	W
		Derating	0.6	W/° C
Operating Junction Temperature.		TJ	+160	° C
Operating Ambient Temperature.		TA	-25 to +85	° C
Storage Temperature Range.		TSTG	-55 to +150	° C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage		VD,MAX	800	V
Drain-Gate Voltage (RGS=1MΩ )		VDGR	800	V
Gate-Source (GND) Voltage		VGS	± 30	V
Drain Current Pulsed (1)		IDM	12.0	ADC
Continuous Drain Current (TC=25° C)		ID	3.0	ADC
Continuous Drain Current (TC=100° C)		ID	2.1	ADC
Single Pulsed Avalanche Energy (2)		EAS	95	mJ
Maximum Supply Voltage		VCC,MAX	30	V
Analog Input Voltage Range		VFB	-0.3 to VSD	V
Total Power Dissipation		PD	75	W
		Derating	0.6	W/° C
Operating Junction Temperature.		TJ	+160	° C
Operating Ambient Temperature.		TA	-25 to +85	° C
Storage Temperature Range.		TSTG	-55 to +150	° C

Note:

1.Repetitive rating: Pulse width limited by maximum junction temperature

2.L = 51mH, starting Tj = 25° C

3.L = 13 H, starting Tj = 25° C

2

				KA5X03XX-SERIES
	Absolute Maximum Ratings
	(Ta=25° C, unless otherwise specified)
	Characteristic	Symbol	Value	Unit
	KA5M0365RN, KA5L0365RN
	Maximum Drain Voltage	VD,MAX	650	V
	Drain-Gate Voltage (RGS=1MΩ )	VDGR	650	V
	Gate-Source (GND) Voltage	VGS	± 30	V
	Drain Current Pulsed (1)	IDM	12.0	ADC
	Continuous Drain Current (Ta=25° C)	ID	0.42	ADC
	Continuous Drain Current (Ta=100° C)	ID	0.28	ADC
	Single Pulsed Avalanche Energy (2)	EAS	127	mJ
	Maximum Supply Voltage	VCC,MAX	30	V
	Analog Input Voltage Range	VFB	-0.3 to VSD	V
	Total Power Dissipation	PD	1.56	W
		Derating	0.0125	W/° C
	Operating Junction Temperature.	TJ	+160	° C
	Operating Ambient Temperature.	TA	-25 to +85	° C
	Storage Temperature Range.	TSTG	-55 to +150	° C

Note:

1.Repetitive rating: Pulse width limited by maximum junction temperature

2.L = 51mH, starting Tj = 25° C

3.L = 13 H, starting Tj = 25° C

3

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25° C unless otherwise specified)

Parameter				Symbol	Condition	Min.	Typ.	Max.	Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage				BVDSS	VGS=0V, ID=50µ A	650	-	-	V
Zero Gate Voltage Drain Current				IDSS	VDS=Max. Rating, VGS=0V	-	-	50	µ	A
					VDS=0.8Max. Rating,	-	-	200	µ	A
					VGS=0V, TC=125° C
Static Drain-Source on Resistance (Note)				RDS(ON)	VGS=10V, ID=0.5A	-	3.6	4.5	Ω
Forward Transconductance (Note)				gfs	VDS=50V, ID=0.5A	2.0	-	-	S
Input Capacitance				Ciss	VGS=0V, VDS=25V,	-	720	-
Output Capacitance				Coss		-	40	-	pF
					f=1MHz
Reverse Transfer Capacitance				Crss		-	40	-
Turn On Delay Time				td(on)	VDD=0.5BVDSS, ID=1.0A	-	150	-
					(MOSFET switching
Rise Time				tr		-	100	-
					time is essentially				nS
Turn Off Delay Time				td(off)		-	150	-
					independent of
Fall Time				tf	operating temperature)	-	42	-
Total Gate Charge				Qg	VGS=10V, ID=1.0A,	-	-	34
(Gate-Source+Gate-Drain)					VDS=0.5BVDSS (MOSFET
									nC
					switching time is essentially
Gate-Source Charge				Qgs		-	7.3	-
					independent of
Gate-Drain (Miller) Charge				Qgd		-	13.3	-
					operating temperature)
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage				BVDSS	VGS=0V, ID=50µ A	800	-	-	V
Zero Gate Voltage Drain Current				IDSS	VDS=Max. Rating, VGS=0V	-	-	250	µ	A
					VDS=0.8Max. Rating,	-	-	1000	µ	A
					VGS=0V, TC=125° C
Static Drain-Source on Resistance (Note)				RDS(ON)	VGS=10V, ID=0.5A	-	4.0	5.0	Ω
Forward Transconductance (Note)				gfs	VDS=50V, ID=0.5A	1.5	2.5	-	S
Input Capacitance				Ciss	VGS=0V, VDS=25V,	-	779	-
Output Capacitance				Coss		-	75.6	-	pF
					f=1MHz
Reverse Transfer Capacitance				Crss		-	24.9	-
Turn On Delay Time				td(on)	VDD=0.5BVDSS, ID=1.0A	-	40	-
					(MOSFET switching
Rise Time				tr		-	95	-
					time is essentially				nS
Turn Off Delay Time				td(off)		-	150	-
					independent of
Fall Time				tf	operating temperature)	-	60	-
Total Gate Charge				Qg	VGS=10V, ID=1.0A,	-	-	34
(Gate-Source+Gate-Drain)					VDS=0.5BVDSS (MOSFET
					switching time is				nC
Gate-Source Charge				Qgs		-	7.2	-
					essentially independent of
Gate-Drain (Miller) Charge				Qgd		-	12.1	-
					operating temperature)
Note:
1. Pulse test: Pulse width ≤ 300µ S, duty ≤ 2%
2.	S =	1
		---
		R

4

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25° C unless otherwise specified)

	Parameter			Symbol	Condition	Min.	Typ.	Max.	Unit
	KA5M0365RN, KA5L0365RN
	Drain-Source Breakdown Voltage			BVDSS	VGS=0V, ID=50µ A	650	-	-	V
	Zero Gate Voltage Drain Current			IDSS	VDS=Max. Rating, VGS=0V	-	-	50	µ	A
					VDS=0.8Max. Rating,	-	-	200	µ	A
					VGS=0V, TC=125° C
	Static Drain-Source on Resistance (Note)			RDS(ON)	VGS=10V, ID=0.5A	-	3.6	4.5	Ω
	Forward Transconductance (Note)			gfs	VDS=50V, ID=0.5A	2.0	-	-	S
	Input Capacitance			Ciss	VGS=0V, VDS=25V,	-	314.9	-
	Output Capacitance			Coss		-	47	-	pF
					f=1MHz
	Reverse Transfer Capacitance			Crss		-	9	-
	Turn On Delay Time			td(on)	VDD=0.5BVDSS, ID=1.0A	-	11.2	-
					(MOSFET switching
	Rise Time			tr		-	34	-
					time is essentially				nS
	Turn Off Delay Time			td(off)		-	28.2	-
					independent of
	Fall Time			tf	operating temperature)	-	32	-
	Total Gate Charge			Qg	VGS=10V, ID=1.0A,			11.93
	(Gate-Source+Gate-Drain)				VDS=0.5BVDSS (MOSFET
									nC
					switching time is
	Gate-Source Charge			Qgs		-	1.95	-
					essentially independent of
	Gate-Drain (Miller) Charge			Qgd			6.85
					operating temperature)
	Note:
	1. Pulse test: Pulse width ≤ 300 S, duty ≤ 2%
	2.	S =	1
			---
			R

5

KA5X03XX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta = 25° C unless otherwise specified)

	Characteristic	Symbol	Test condition			Min.	Typ.	Max.	Unit
	UVLO SECTION
	Start Threshold Voltage	VSTART	VFB=GND			14	15	16	V
	Stop Threshold Voltage	VSTOP	VFB=GND			8.4	9	9.6	V
	OSCILLATOR SECTION
	Initial Accuracy	FOSC	KA5H0365R			90	100	110	kHz
			KA5H0380R
			KA5M0365R
	Initial Accuracy	FOSC	KA5M0365RN			61	67	73	kHz
			KA5M0380R
			KA5L0365R
	Initial Accuracy	FOSC	KA5L0365RN			45	50	55	kHz
			KA5L0380R
	Frequency Change With Temperature (2)	-	-25° C≤ Ta≤ +85° C			-	± 5	± 10	%
	Maximum Duty Cycle	Dmax	KA5H0365R			62	67	72	%
			KA5H0380R
			KA5M0365R
			KA5M0365RN
	Maximum Duty Cycle	Dmax	KA5M0380R			72	77	82	%
			KA5L0365R
			KA5L0365RN
			KA5L0380R
	FEEDBACK SECTION
	Feedback Source Current	IFB	Ta=25° C, 0V<Vfb<3V			0.7	0.9	1.1	mA
	Shutdown Feedback Voltage	VSD	Vfb>6.5V			6.9	7.5	8.1	V
	Shutdown Delay Current	Idelay	Ta=25° C, 5V≤ Vfb≤ VSD			4	5	6	A
	REFERENCE SECTION
	Output Voltage (1)	Vref	Ta=25° C			4.80	5.00	5.20	V
	Temperature Stability (1)(2)	Vref/∆ T	-25° C≤ Ta≤ +85° C			-	0.3	0.6	mV/° C
	CURRENT LIMIT(SELF-PROTECTION)SECTION
	Peak Current Limit	IOVER	Max. inductor current			1.89	2.15	2.41	A
	PROTECTION SECTION
	Over Voltage Protection	VOVP	VCC>24V			25	27	29	V
	Thermal Shutdown Temperature (Tj) (1)	TSD	-			140	160	-	° C
	TOTAL STANDBY CURRENT SECTION
	Start-up Current	ISTART	VCC=14V			-	100	170	A
	Operating Supply Current	IOP	VCC<28			-	7	12	mA
	(Control Part Only)

Note:

1.These parameters, although guaranteed, are not 100% tested in production

2.These parameters, although guaranteed, are tested in EDS(water test) process

6