Fairchild Semiconductor HUFA75344G3, HUFA75344P3, HUFA75344S3S Datasheet

HUFA75344G3, HUFA75344P3, HUFA75344S3S,

HUFA75344S3

	Data Sheet	June 2003

75A, 55V, 0.008 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75344.

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUFA75344G3	TO-247	75344G
HUFA75344P3	TO-220AB	75344P
HUFA75344S3S	TO-263AB	75344S
HUFA75344S3	TO-262AA	75344S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST.

Features

•75A, 55V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Models

-Thermal Impedance PSPICE and SABER Models Available on the web at: www.Fairchild.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

D

G

S

Packaging

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

SOURCE DRAIN

GATE

TO-220AB

DRAIN	TO-247
(TAB)

	DRAIN						SOURCE	DRAIN
	(FLANGE)							GATE
	GATE
	SOURCE
	TO-263AB			DRAIN			TO-262AA
				(FLANGE)

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2003 Fairchild Semiconductor Corporation

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1

HUFA75344G3, HUFA75344P3, HUFA75344S3S

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
			UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VDSS	55	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	55	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	± 20	V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	75	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	285	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	1.90	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	T , T	-55 to 175	oC
Maximum Temperature for Soldering	J STG
			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . .T	300
	L	260	oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER		SYMBOL		TEST CONDITIONS				MIN	TYP	MAX	UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage		BVDSS		ID = 250µ A, VGS = 0V (Figure 11)				55	-	-	V
Zero Gate Voltage Drain Current		IDSS		VDS = 50V, VGS = 0V				-	-	1	µ A
				VDS = 45V, VGS = 0V, TC = 150oC				-	-	250	µ A
Gate to Source Leakage Current		IGSS		VGS = ± 20V				-	-	± 100	nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage		VGS(TH)		VGS = VDS, ID = 250µ A (Figure 10)				2	-	4	V
Drain to Source On Resistance		rDS(ON)		ID = 75A, VGS = 10V (Figure 9)				-	0.0065	0.008	Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case		Rθ JC		(Figure 3)				-	-	0.52	oC/W
Thermal Resistance Junction to Ambient		Rθ JA		TO-247				-	-	30	oC/W
				TO-220, TO-263, TO-262				-	-	62	oC/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time		tON		VDD = 30V, ID	75A,			-	-	195	ns
				RL = 0.4Ω , VGS =	10V,
Turn-On Delay Time		td(ON)						-	16	-	ns
				RGS = 3.0Ω
Rise Time		tr						-	112	-	ns
Turn-Off Delay Time		td(OFF)						-	37	-	ns
Fall Time		tf						-	28	-	ns
Turn-Off Time		tOFF						-	-	100	ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge		Qg(TOT)		VGS = 0V to 20V		VDD = 30V,		-	175	210	nC
						ID 75A,
Gate Charge at 10V		Qg(10)		VGS = 0V to 10V				-	90	108	nC
						RL = 0.4Ω
Threshold Gate Charge		Qg(TH)		VGS = 0V to 2V				-	5.9	7.0	nC
						Ig(REF) = 1.0mA
Gate to Source Gate Charge		Qgs				(Figure 13)		-	14	-	nC
Reverse Transfer Capacitance		Qgd						-	39	-	nC
CAPACITANCE SPECIFICATIONS
Input Capacitance		CISS		VDS = 25V, VGS = 0V,				-	3200	-	pF
				f = 1MHz
Output Capacitance		COSS						-	1170	-	pF
				(Figure 12)
Reverse Transfer Capacitance		CRSS						-	310	-	pF

©2003 Fairchild Semiconductor Corporation

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1

HUFA75344G3, HUFA75344P3, HUFA75344S3S

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Source to Drain Diode Voltage	VSD	ISD = 75A	-	-	1.25	V
Reverse Recovery Time	trr	ISD = 75A, dISD/dt = 100A/ s	-	-	105	ns
Reverse Recovered Charge	QRR	ISD = 75A, dISD/dt = 100A/ s	-	-	210	nC

Typical Performance Curves

MULTIPLIERDISSIPATION	1.2							(A)CURRENTDRAIN
	1.0
	0.8
	0.6
POWER	0.4
								I
								,
	0.2							D
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

80

60

40

20

0

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE				CASE TEMPERATURE
		2
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
	IMPEDANCE		0.2
NORMALIZED			0.1
			0.05
			0.02
			0.01					PDM
		0.1
,	THERMAL							t1
Zθ JC
								t2
								NOTES:
								DUTY FACTOR: D = t1/t2
				SINGLE PULSE				PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01
			10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2003 Fairchild Semiconductor Corporation

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1