Fairchild Semiconductor HUF76407P3 Datasheet

HUF76407P3

	Data Sheet	December 2001

12A, 60V, 0.107 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

HUF76407P3

Symbol

D

G

S

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.092Ω, VGS = 10V

- rDS(ON) = 0.107Ω, VGS = 5V

•Simulation Models

-Temperature Compensated PSPICE® and SABER™ Electrical Models

-Spice and SABER Thermal Impedance Models

-www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Switching Time vs RGS Curves

Ordering Information

PART NUMBER	PACKAGE	BRAND
HUF76407P3	TO-220AB	76407P

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings	T = 25oC, Unless Otherwise Specified
	C
			HUF76407P3	UNITS
Drain to Source Voltage (Note 1) . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDSS	60	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. . VDGR	60	V
Gate to Source Voltage . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±16	V
Drain Current
Continuous (TC = 25oC, VGS = 5V) .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	12	A
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. . . . . ID	13	A
Continuous (TC = 135oC, VGS = 5V)	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	6	A
Continuous (TC = 135oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. . . . . ID	6	A
Pulsed Drain Current . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . UIS	Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	38	W
Derate Above 25oC . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	0.25	W/oC
Operating and Storage Temperature . . .	. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering				oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. . . . . TL	300
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. . . Tpkg	260	oC

NOTE:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUF76407P3 Rev. B

HUF76407P3

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER	SYMBOL			TEST CONDITIONS					MIN	TYP	MAX	UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage	BVDSS	ID = 250µA, VGS = 0V (Figure 12)							60	-	-	V
		ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)							55	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS = 55V, VGS = 0V							-	-	1	µA
		V	DS	= 50V, V	= 0V, T		C	= 150oC	-	-	250	µA
				GS
Gate to Source Leakage Current	IGSS	VGS = ±16V							-	-	±100	nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage	VGS(TH)	VGS = VDS, ID = 250µA (Figure 11)							1	-	3	V
Drain to Source On Resistance	rDS(ON)	ID = 13A, VGS = 10V (Figures 9, 10)							-	0.077	0.092	Ω
		ID = 8A, VGS = 5V (Figure 9)							-	0.095	0.107	Ω
		ID = 8A, VGS = 4.5V (Figure 9)							-	0.107	0.117	Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case	Rθ JC	TO-220							-	-	3.94	oC/W
Thermal Resistance Junction to	Rθ JA								-	-	62	oC/W
Ambient
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time	tON	VDD = 30V, ID = 8A							-	-	170	ns
		VGS = 4.5V, RGS = 32Ω
Turn-On Delay Time	td(ON)								-	8	-	ns
		(Figures 15, 21, 22)
Rise Time	tr								-	105	-	ns
Turn-Off Delay Time	td(OFF)								-	22	-	ns
Fall Time	tf								-	39	-	ns
Turn-Off Time	tOFF								-	-	92	ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time	tON	VDD = 30V, ID = 13A							-	-	56	ns
		VGS = 10V,
Turn-On Delay Time	td(ON)								-	5	-	ns
		RGS = 32Ω
Rise Time	tr								-	32	-	ns
		(Figures 16, 21, 22)
Turn-Off Delay Time	td(OFF)								-	43	-	ns
Fall Time	tf								-	45	-	ns
Turn-Off Time	tOFF								-	-	132	ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge	Qg(TOT)	VGS = 0V to 10V				VDD = 30V,			-	9.4	11.3	nC
						ID = 8A,
Gate Charge at 5V	Qg(5)	VGS = 0V to 5V							-	5.2	6.2	nC
						Ig(REF) = 1.0mA
Threshold Gate Charge	Qg(TH)	VGS = 0V to 1V							-	.36	.43	nC
						(Figures 14, 19, 20)
Gate to Source Gate Charge	Qgs								-	1.2	-	nC
Gate to Drain “Miller” Charge	Q								-	2.5	-	nC
	gd
CAPACITANCE SPECIFICATIONS
Input Capacitance	CISS	VDS = 25V, VGS = 0V,							-	350	-	pF
		f = 1MHz
Output Capacitance	COSS								-	105	-	pF
		(Figure 13)
Reverse Transfer Capacitance	CRSS								-	23	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS
Source to Drain Diode Voltage	VSD	ISD = 8A	-	-	1.25	V
		ISD = 4A	-	-	1.0	V
Reverse Recovery Time	trr	ISD = 8A, dISD/dt = 100A/µs	-	-	66	ns
Reverse Recovered Charge	QRR	ISD = 8A, dISD/dt = 100A/µs	-	-	159	nC

©2001 Fairchild Semiconductor Corporation

HUF76407P3 Rev. B

HUF76407P3

Typical Performance Curves

	1.2
MULTIPLIER	1.0
	0.8
DISSIPATION	0.6
	0.4
POWER	0.2
	0						150	175
	0	25	50	75	100	125
			TC, CASE TEMPERATURE (oC)

	15
(A)				VGS = 10V
CURRENT	10
		VGS = 4.5V
, DRAIN	5
D
I
	0
	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE				CASE TEMPERATURE
		2	DUTY CYCLE - DESCENDING ORDER
		1	0.5
			0.2
	IMPEDANCE		0.1
NORMALIZED			0.05
			0.02
			0.01
								PDM
		0.1
,	THERMAL
Zθ JC								t1
								t2
								NOTES:
				SINGLE PULSE				DUTY FACTOR: D = t1/t2
		0.01						PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		10-5		10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

	200						TC = 25oC
							FOR TEMPERATURES
(A)	100						ABOVE 25oC DERATE PEAK
							CURRENT AS FOLLOWS:
CURRENTPEAK,
							I = I25	175 - TC
								150
DM			V	= 5V
I	TRANSCONDUCTANCE		GS
	MAY LIMIT CURRENT
	IN THIS REGION
	10
	10-5	10-4		10-3	10-2	10-1	100	101
					t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corporation

HUF76407P3 Rev. B