HUF75329G3, HUF75329P3, HUF75329S3S
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Data Sheet |
December 2001 |
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49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology
achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER |
PACKAGE |
BRAND |
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HUF75329G3 |
TO-247 |
75329G |
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HUF75329P3 |
TO-220AB |
75329P |
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HUF75329S3S |
TO-263AB |
75329S |
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NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Features
•49A, 55V
•Ultra Low On-Resistance, rDS(ON) = 0.024Ω
•Temperature Compensating PSPICE® and SABER™ Models
-Available on the web at: www.fairchildsemi.com
•Thermal Impedance PSPICE and SABER Models
•Peak Current vs Pulse Width Curve
•UIS Rating Curve
•Related Literature
-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D 
G 
S 
Packaging
JEDEC STYLE TO-247 |
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JEDEC TO-220AB |
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SOURCE |
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SOURCE |
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DRAIN |
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DRAIN |
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GATE |
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GATE |
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DRAIN |
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(FLANGE) |
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DRAIN (TAB)
JEDEC TO-263AB
GATE |
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DRAIN |
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(FLANGE) |
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SOURCE |
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Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation |
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B |
HUF75329G3, HUF75329P3, HUF75329S3SOGM
Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified |
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C |
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UNITS |
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . |
. . VDSS |
55 |
V |
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . |
. . VDGR |
55 |
V |
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . VGS |
±20 |
V |
Drain Current |
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Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . ID |
49 |
A |
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . IDM |
Figure 4 |
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Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . EAS |
Figures 6, 14, 15 |
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Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . PD |
128 |
W |
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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0.86 |
W/oC |
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . |
TJ, TSTG |
-55 to 175 |
oC |
Maximum Temperature for Soldering |
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oC |
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . |
. . . . . TL |
300 |
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Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . |
. . . Tpkg |
260 |
oC |
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER |
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TEST CONDITIONS |
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TYP |
MAX |
UNITS |
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OFF STATE SPECIFICATIONS |
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Drain to Source Breakdown Voltage |
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BVDSS |
ID = 250µA, VGS = 0V (Figure 11) |
55 |
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V |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 50V, VGS = 0V |
- |
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1 |
µA |
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V |
DS |
= 45V, V |
GS |
= 0V, T = 150oC |
- |
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250 |
µA |
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C |
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Gate to Source Leakage Current |
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IGSS |
VGS = ±20V |
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- |
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±100 |
nA |
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ON STATE SPECIFICATIONS |
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Gate to Source Threshold Voltage |
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VGS(TH) |
VGS = VDS, ID = 250µA (Figure 10) |
2 |
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4 |
V |
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Drain to Source On Resistance |
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rDS(ON) |
ID = 49A, VGS = 10V (Figure 9) |
- |
0.020 |
0.024 |
Ω |
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THERMAL SPECIFICATIONS |
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Thermal Resistance Junction to Case |
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Rθ JC |
(Figure 3) |
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- |
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1.17 |
oC/W |
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Thermal Resistance Junction to Ambient |
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Rθ JA |
TO-247 |
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- |
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30 |
oC/W |
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TO-220, TO-263 |
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- |
- |
62 |
oC/W |
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SWITCHING SPECIFICATIONS (VGS = 10V) |
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Turn-On Time |
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tON |
VDD = 30V, ID 49A, |
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105 |
ns |
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RL = 0.61Ω , VGS = 10V, |
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Turn-On Delay Time |
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td(ON) |
- |
12 |
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ns |
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RGS = 9.1Ω |
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Rise Time |
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tr |
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- |
58 |
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ns |
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Turn-Off Delay Time |
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td(OFF) |
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- |
33 |
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Fall Time |
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tf |
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33 |
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ns |
Turn-Off Time |
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tOFF |
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- |
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100 |
ns |
GATE CHARGE SPECIFICATIONS |
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Total Gate Charge |
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Qg(TOT) |
VGS = 0V to 20V |
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VDD = 30V, |
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60 |
75 |
nC |
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ID 49A, |
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Gate Charge at 10V |
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Qg(10) |
VGS = 0V to 10V |
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35 |
43 |
nC |
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RL = 0.61Ω |
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Threshold Gate Charge |
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Qg(TH) |
VGS = 0V to 2V |
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Ig(REF) = 1.0mA |
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2.0 |
2.5 |
nC |
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(Figure 13) |
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Gate to Source Gate Charge |
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Qgs |
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5 |
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nC |
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Gate to Drain “Miller” Charge |
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Q |
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13 |
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nC |
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gd |
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©2001 Fairchild Semiconductor Corporation |
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B |
HUF75329G3, HUF75329P3, HUF75329S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNITS |
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CAPACITANCE SPECIFICATIONS |
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Input Capacitance |
CISS |
VDS = 25V, VGS = 0V, |
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1060 |
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pF |
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f = 1MHz |
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Output Capacitance |
COSS |
- |
405 |
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pF |
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(Figure 12) |
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Reverse Transfer Capacitance |
CRSS |
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95 |
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pF |
Source to Drain Diode Specifications
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNITS |
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Source to Drain Diode Voltage |
VSD |
ISD = 49A |
- |
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1.25 |
V |
Reverse Recovery Time |
trr |
ISD = 49A, dISD/dt = 100A/ s |
- |
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72 |
ns |
Reverse Recovered Charge |
QRR |
ISD = 49A, dISD/dt = 100A/ s |
- |
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120 |
nC |
Typical Performance Curves
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1.2 |
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MULTIPLIER |
1.0 |
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0.8 |
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DISSIPATION |
0.6 |
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0.4 |
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POWER |
0.2 |
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0 |
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175 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
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TC , CASE TEMPERATURE (oC) |
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60 |
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(A) |
50 |
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CURRENT |
40 |
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30 |
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, DRAIN |
20 |
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D |
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I |
10 |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC, CASE TEMPERATURE (oC) |
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FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE |
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs |
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TEMPERATURE |
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CASE TEMPERATURE |
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2 |
DUTY CYCLE - DESCENDING ORDER |
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1 |
0.5 |
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0.2 |
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IMPEDANCE |
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0.1 |
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NORMALIZED |
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0.05 |
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0.02 |
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0.01 |
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PDM |
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0.1 |
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, |
THERMAL |
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Zθ JC |
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t1 |
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NOTES: |
t2 |
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DUTY FACTOR: D = t1/t2 |
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SINGLE PULSE |
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PEAK TJ = PDM x Zθ JC x Rθ JC + TC |
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0.01 |
-5 |
10 |
-4 |
-3 |
10 |
-2 |
10 |
-1 |
10 |
0 |
1 |
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10 |
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10 |
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10 |
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t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation |
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B |
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