Fairchild Semiconductor HUFA75343S3S, HUFA75343G3, HUFA75343P3 Datasheet

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HUFA75343G3, HUFA75343P3, HUFA75343S3S

	Data Sheet	December 2001

75A, 55V, 0.009 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology

achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products.

Formerly developmental type TA75343.

Ordering Information

PART NUMBER	PACKAGE	BRAND

HUFA75343G3	TO-247	75343G

HUFA75343P3	TO-220AB	75343P

HUFA75343S3S	TO-263AB	75343S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75343S3ST.

Features

•75A, 55V

•Simulation Models

-Temperature Compensating PSPICE® and SABER™ Models

-Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com

•Peak Current vs Pulse Width Curve

•UIS Rating Curve

•Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247		JEDEC TO-220AB
SOURCE			SOURCE
DRAIN			DRAIN
DRAIN			GATE
GATE			GATE
GATE	DRAIN
	DRAIN
	(FLANGE)

DRAIN (TAB)

JEDEC TO-263AB

GATE		DRAIN
GATE	(FLANGE)
	(FLANGE)
SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B

HUFA75343G3, HUFA75343P3, HUFA75343S3S

Absolute Maximum Ratings T = 25oC, Unless Otherwise Specified
C
			UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDSS	55	V
Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . VDGR	55	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VGS	±20	V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . ID	75	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . IDM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . EAS	Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . PD	270	W
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	1.81	W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	TJ, TSTG	-55 to 175	oC
Maximum Temperature for Soldering			oC
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . TL	300	oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . Tpkg	260	oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

Zero Gate Voltage Drain Current

IDSS

VDS = 50V, VGS = 0V

µA

= 45V, V

= 0V, T = 150oC

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

Drain to Source On Resistance

rDS(ON)

ID = 75A, VGS = 10V (Figure 9)

0.007

0.009

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

Rθ JC

(Figure 3)

0.55

oC/W

Thermal Resistance Junction to Ambient

Rθ JA

TO-247

oC/W

TO-220, TO-263

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 30V, ID 75A,

125

RL = 0.4Ω

, VGS = 10V,

Turn-On Delay Time

td(ON)

RGS = 2.5Ω

Rise Time

Turn-Off Delay Time

td(OFF)

Fall Time

Turn-Off Time

tOFF

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 30V,

170

205

ID 75A,

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

110

RL = 0.4Ω

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

Ig(REF) = 1.0mA

6.0

7.2

(Figure 13)

Gate to Source Gate Charge

Qgs

Gate to Drain “Miller” Charge

HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B

Fairchild Semiconductor HUFA75343S3S, HUFA75343G3, HUFA75343P3 Datasheet

HUFA75343G3, HUFA75343P3, HUFA75343S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance	CISS	VDS = 25V, VGS = 0V,	-	3000	-	pF
		f = 1MHz
Output Capacitance	COSS	f = 1MHz	-	1100	-	pF
Output Capacitance	COSS	(Figure 12)	-	1100	-	pF
Reverse Transfer Capacitance	CRSS		-	230	-	pF

Source to Drain Diode Specifications

PARAMETER	SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNITS

Source to Drain Diode Voltage	VSD	ISD = 75A	-	-	1.25	V
Reverse Recovery Time	trr	ISD = 75A, dISD/dt = 100A/ s	-	-	100	ns
Reverse Recovered Charge	QRR	ISD = 75A, dISD/dt = 100A/ s	-	-	200	nC

Typical Performance Curves

MULTIPLIERDISSIPATION	1.2							(A)CURRENTDRAIN
MULTIPLIERDISSIPATION	1.0							(A)CURRENTDRAIN
	1.0
	0.8
	0.6
POWER	0.4
POWER								I
								,
								D
	0.2
	0
	0	25	50	75	100	125	150	175
			TC , CASE TEMPERATURE (oC)

100

125

150

175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

			TEMPERATURE				CASE TEMPERATURE
		2
			DUTY CYCLE - DESCENDING ORDER
		1	0.5
		1	0.2
			0.2
NORMALIZED	IMPEDANCE		0.1
			0.05
			0.02
			0.01					PDM
								PDM
		0.1
,	THERMAL							t1
Zθ JC								t1
								t2
								NOTES:
								DUTY FACTOR: D = t1/t2
		0.01		SINGLE PULSE				PEAK TJ = PDM x Zθ JC x Rθ JC + TC
		0.01	10-5	10-4	10-3	10-2	10-1	100	101
			10-5	10-4	10-3	10-2	10-1	100	101

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B

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