Fairchild Semiconductor GBU8A, GBU8K, GBU8J, GBU8D, GBU8B Datasheet

GBU8A - GBU8K

Features

•Surge overload rating: 200 amperes peak.

•Reliable low cost construction utilizing molded plastic technique.

•Ideal for printed circuit board.

GBU

8.0 Ampere Bridge Rectifiers

0.125 X 45O
(3.2) Typ			0.880	(22.3)	0.020 R
			0.860	(21.8)			TYP
				0.160	(4.1)		0.310	(7.9)
				0.140	(3.5)		0.290	(7.4)
0.740	(18.8)	0.075 R	+		0.085		(2.16)
0.720	(18.3)	(1.9)	+		0.065		(1.65)
		+	~	~			0.080 (2.03)
0.710 (18.0)							0.060		(1.52)
0.690	(17.5)
0.100 (2.54)
0.085	(2.16)
0.080	(2.03)				0.050	(1.27)
0.065	(1.65)				0.040	(1.02)
					0.050		(1.3)
Dimensions are in:			0.210	(5.3)	0.040 (1.0)
inches (mm)
			0.190 (4.8)

Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol		Parameter				Value		Units
IO	Average Rectified Current		@ TA = 100°C				8.0		A
			@ TA = 45°C				6.0		A
if(surge)	Peak Forward Surge Current
		8.3 ms single half-sine-wave					200		A
		Superimposed on rated load (JEDEC method)
PD	Total Device Dissipation						6.9		W
		Derate above 25°C					55	mW/°C
RθJA	Thermal Resistance, Junction to Ambient,** per leg						18		°C/W
Tstg	Storage Temperature Range					-55 to +150			°C
TJ	Operating Junction Tem perature					-55 to +150			°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).
Electrical Characteristics			TA = 25°C unless otherwise noted
	Parameter				Device				Units
			8A	8B	8D	8G	8J	8K
Peak Repetitive Reverse Voltage			50	100	200	400	600	800	V
Maximum RMS Input Voltage			35	70	140	280	420	560	V
DC Reverse Voltage (Rated VR)			50	100	200	400	600	800	V
Maximum Reverse Leakage, per element					5.0
@ rated VR		TA = 25°C							μ
					500				A
		TA = 100°C							μA
Maximum Forward Voltage Drop, per element
		@ 8.0 A			1.0				V
I t rating for fusing		t < 8.35 ms			166				A Sec

GBU8K - GBU8A

ã1998 Fairchild Semiconductor Corporation

GBU8A-GBU8M, Rev. A