Fairchild Semiconductor GBU6M, GBU6J, GBU6G, GBU6A, GBU6D Datasheet

GBU6A - GBU6M

Features

•Surge overload rating: 175 amperes peak.

•Reliable low cost construction utilizing molded plastic technique.

•Ideal for printed circuit board.

GBU

6.0 Ampere Bridge Rectifiers

0.125 X 45O
(3.2) Typ		0.880	(22.3)		0.020 R
		0.860	(21.8)			TYP
			0.160	(4.1)		0.310	(7.9)
			0.140	(3.5)		0.290	(7.4)
0.740	(18.8)	0.075 R	+		0.085	(2.16)
0.720	(18.3)	(1.9)	+		0.065	(1.65)

							+							~						~															0.080 (2.03)
0.710 (18.0)																																			0.060			(1.52)
0.690		(17.5)
0.100 (2.54)
0.085		(2.16)
0.080		(2.03)																										0.050						(1.27)
	0.065	(1.65)																												0.040				(1.02)
																													0.050 (1.3)
Dimensions are in:																														0.040 (1.0)
														0.210 (5.3)
	inches (mm)
														0.190					(4.8)

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

@ TA = 100°C

6.0

A

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

175

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

14.5

W

Derate above 25°C

mW/°C

RθJA

Thermal Resistance, Junction to Ambient,** per leg

8.6

°C/W

RθJC

Thermal Resistance, Junction to Case,*** per leg

3.1

°C/W

Tstg

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).

***Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm).

Electrical Characteristics

TA = 25°C unless otherwise noted

Parameter

Device

Units

6A

6B

6D

6G

6J

6K

6M

Peak Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Input Voltage

35

70

140

280

420

560

700

V

DC Reverse Voltage (Rated VR)

50

100

200

400

600

800

1000

V

Maximum Reverse Leakage, per element

μA

@ rated VR

TA = 25°C

5.0

TA = 125°C

500

μA

Maximum Forward Voltage Drop, per element

@ 6.0 A

1.0

V

I2t rating for fusing

t < 8.35 ms

127

A2Sec

GBU6M - GBU6A

ã1999 Fairchild Semiconductor Corporation

GBU6A-GBU6M, Rev. A