Analog Devices DAC10GX, DAC10GS, DAC10GP, DAC10FX Datasheet

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Analog Devices DAC10GX, DAC10GS, DAC10GP, DAC10FX Datasheet

a10-Bit High Speed Multiplying D/A Converter

(Universal Digital Logic Interface)

DAC10*

FEATURES

Fast Settling: 85 ns

Low Full-Scale Drift: 10 ppm/8C

Nonlinearity to 0.05% Max Over Temperature Range Complementary Current Outputs: 0 mA to 4 mAÊ Wide Range Multiplying Capability: 1 MHz Bandwidth Wide Power Supply Range: +5, –7.5 Min to 618 V Max

Direct Interface to TTL, CMOS, ECL, PMOS, NMOS Availability in Die FormÊ

GENERAL DESCRIPTION

The DAC10 series of 10-bit monolithic multiplying digital-to- analog converters provide high speed performance and full-scale accuracy.

Advanced circuit design achieves 85 ns settling times with very low “glitch” energy and low power consumption. Direct interface to all popular logic families with full noise immunity is provided by the high swing, adjustable threshold logic inputs.

All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with 85 mW power consumption attainable at lower supplies.

A highly stable, unique trim method is used, which selectively shorts Zener diodes, to provide 1/2 LSB full-scale accuracy without the need for laser trimming.

Single-chip reliability, coupled with low cost and outstanding flexibility, make the DAC10 device an ideal building block for A/D converters, Data Acquisition systems, CRT displays, programmable test equipment and other applications where low power consumption, input/output versatility and long-term stability are required.

 

 

 

 

SIMPLIFIED SCHEMATIC

 

 

 

 

 

 

 

 

MSB

 

 

 

 

 

 

 

 

LSB

 

 

V+

VLC

B1

B2

B3

B4

B5

B6

B7

B8

B9

B10

 

 

15

1

5

6

7

8

9

10

11

12

13

14

 

 

 

BIAS NETWORK

 

 

 

 

 

 

 

 

 

4

IOUT

 

 

 

 

 

 

 

 

 

 

 

 

 

16

CURRENT SWITCHES

 

 

 

 

 

 

 

 

2

IOUT

VREF (+)

REFERENCE

 

 

 

 

 

 

 

 

 

 

 

 

AMPLIFIER

 

 

 

 

 

 

 

 

 

 

 

17

 

 

 

 

 

 

 

 

 

 

 

 

 

VREF (–)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

3

 

 

 

 

 

 

 

 

 

 

 

COMP

 

V–

 

 

 

 

 

 

 

 

 

 

*Protected by Patent Nos. 4,055,770, 4,056,740 and 4,092,639.

REV. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

World Wide Web Site: http://www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 1998

DAC10–SPECIFICATIONS

 

 

 

 

 

 

 

(@ VS = 615 V; IREF = 2 mA; 08C TA +708C for DAC10F and G, unless otherwise noted.

ELECTRICAL CHARACTERISTICS Output characteristics apply to both IOUT and

 

.)

 

 

 

 

IOUT

 

 

 

 

 

 

 

 

 

 

 

 

DAC10F

 

 

 

DAC10G

 

 

Parameter

Symbol

 

Conditions

Min

Typ

Max

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MONOTONICITY

 

 

 

 

 

 

 

10

 

 

 

 

10

 

 

Bits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NONLINEARITY

NL

 

 

 

 

 

 

 

0.3

0.5

 

 

0.6

1

LSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIFFERENTIAL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NONLINEARITY

DNL

 

 

 

 

 

 

 

0.3

1

 

 

 

0.7

 

LSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SETTLING TIME

tS

 

All Bits Switched ON or OFF

 

 

 

 

 

 

 

 

 

 

 

 

Settle to 0.05% of FS (See Note)

 

85

135

 

 

85

150

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT CAPACITANCE

CO

 

 

 

 

 

 

 

18

 

 

 

 

18

 

pF

PROPAGATION DELAY

tPLH

 

All Bits Switched RL = 5 kΩ

 

50

 

 

 

 

50

 

ns

 

tPHL

 

 

 

 

 

RL = 0 kΩ

 

50

 

 

 

 

50

 

ns

OUTPUT VOLTAGE

 

 

Full-Scale Current Change

 

–5.5

 

 

 

 

–5.5

 

V

COMPLIANCE

VOC

 

<1 LSB

 

+10

 

 

 

 

+10

 

V

GAIN TEMPCO

TCIFS

 

(See Note)

 

±10

±25

 

 

±10

±50

ppm/°C

FULL-SCALE SYMMETRY

IFSS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μA

 

IFR–IFR

 

 

0.1

4

 

 

 

0.1

4

ZERO-SCALE CURRENT

IZS

 

 

 

 

 

 

 

0.01

0.5

 

 

0.01

0.5

μA

FULL-SCALE CURRENT

IFR

 

(See Note)

3.960

3.996

4.032

 

3.920

3.996

4.072

mA

REFERENCE INPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

mA/μs

SLEW RATE

DI/dt

 

 

 

 

 

 

 

6

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REFERENCE BIAS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μA

CURRENT

IB

 

 

 

 

 

 

 

–1

–3

 

–1

–3

POWER SUPPLY

PPS/FS+

 

4.5 V V+ –18 V

 

0.001

0.01

 

 

0.001

0.01

% IFS/% V

SENSITIVITY

PPS/FS

 

–18 V V– –10 V

 

0.0012

0.01

 

 

0.0012

0.01

% IFS/% V

POWER SUPPLY CURRENT

I+

 

VS = ±15 V; IREF = 2 mA

 

2.3

4

 

 

 

2.3

4

mA

 

I–

 

 

 

 

 

 

 

–9

–15

 

–9

–15

mA

 

I+

 

VS = +5 V; –7.5 V; IREF = 1 mA

 

1.8

4

 

 

 

1.8

4

mA

 

I–

 

 

 

 

 

 

 

–5.9

–9

 

–5.9

–9

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER DISSIPATION

PD

 

VS = ±15 V; IREF = 2 mA

 

231

285

 

 

231

285

mW

 

PD

 

VS = +5 V; –7.5 V; IREF = 1 mA

 

85

88

 

 

 

85

88

mW

LOGIC INPUT LEVELS

VIL

 

VLC = 0

 

 

0.8

 

 

 

0.8

V

 

VIH

 

VLC = 0

2

 

 

 

 

2

 

 

V

LOGIC INPUT CURRENTS

IIL

 

VLC = 0; VIN = 0.8 V

–10

–5

 

 

 

–10

–5

 

μA

 

IIH

 

VIN = 2.0 V

 

0.001

10

 

 

 

0.001

10

μA

 

 

 

 

 

 

 

(@ VS = 615 V; IREF = 2 mA; TA = +258C, unless otherwise noted. Output characteristics

ELECTRICAL CHARACTERISTICS apply to both IOUT and IOUT

.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DAC10F

 

 

 

DAC10G

 

 

Parameter

Symbol

 

Conditions

Min

Typ

Max

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MONOTONICITY

 

 

 

 

 

 

 

10

 

 

 

 

10

 

 

Bits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NONLINEARITY

NL

 

 

 

 

 

 

 

0.3

0.5

 

 

0.6

1

LSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIFFERENTIAL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NONLINEARITY

DNL

 

 

 

 

 

 

 

0.3

1

 

 

 

0.7

 

LSB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COMPLIANCE

VOC

 

Full-Scale Current Change, <1 LSB

–5

–6/+18 +10

–5

–6/+15 +10

V

FULL-SCALE CURRENT

IFS

 

VREF = 10.000 V,

 

 

 

 

 

 

 

 

 

 

 

 

R14 = R15 = 5.000 kΩ

3.978

3.996

4.014

3.956

3.996

4.036

mA

FULL-SCALE SYMMETRY

IFSS

 

 

 

 

 

0.1

4

 

 

 

0.1

0.4

μA

 

IFR–IFR

 

 

 

 

 

ZERO-SCALE CURRENT

IZS

 

 

 

 

 

 

 

0.01

0.5

 

 

0.01

0.5

μA

NOTE: Guaranteed by design.

–2–

REV. D

 

 

 

 

DAC10

(@ VS = 615 V, IREF = 2 mA, TA = +258C, unless otherwise noted. Output characteristics refer to both

WAFER TEST LIMITS IOUT and IOUT).

 

 

 

 

 

 

 

 

DAC10N

 

 

Parameter

Symbol

Conditions

Limit

Units

 

 

 

 

 

 

RESOLUTION

 

 

10

Bits min

 

 

 

 

 

 

MONOTONICITY

 

 

10

Bits min

 

 

 

 

 

 

NONLINEARITY

NL

 

±0.5

LSB max

 

 

 

 

 

 

OUTPUT VOLTAGE COMPLIANCE

VOC

True 1 LSB

+10

V max

 

 

 

–5

V min

 

 

 

 

 

OUTPUT CURRENT RANGE

 

IFS ±3.996 mA

±18

μA max

 

 

 

 

 

 

 

ZERO-SCALE CURRENT

IZS

All Bits OFF

0.5

μA max

LOGIC INPUT “1”

VIH

IIN = 100 nA

2

V min

 

LOGIC INPUT “0”

VIL

VLC @ Ground

0.8

V max

 

 

IIN = –100 μA

 

 

 

POSITIVE SUPPLY CURRENT

I+

V+ = 15 V

4

mA max

 

 

 

 

 

 

NEGATIVE SUPPLY CURRENT

I–

V+ = –15 V

–15

mA max

 

 

 

 

 

 

NOTE: Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard produce dice.

 

 

(@ VS = 615 V, IREF = 2 mA, unless otherwise noted. Output characteristics

TYPICAL ELECTRICAL CHARACTERISTICS refer to both IOUT and IOUT

).

 

 

 

 

 

 

 

DAC10F

 

 

Parameter

Symbol

Conditions

Typ

Units

 

 

 

 

 

 

 

SETTLING TIME

tS

To ±1/2 LSB When Output Is Switched from 0 to FS

85

ns

 

GAIN TEMPERATURE

 

 

 

±10

ppm FS/°C

 

COEFFICIENT (TC)

 

VREF Tempco Excluded

OUTPUT CAPACITANCE

 

 

 

18

pF

 

 

 

 

 

 

OUTPUT RESISTANCE

 

 

 

10

MΩ

 

 

 

 

 

 

 

 

DICE CHARACTERISTICS

DIE SIZE 0.091 3 0.087 inch, 7,917 sq. mils (2.311 3 2.210 mm, 5.107 sq. mm)

REV. D

–3–

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