Fairchild Semiconductor MM74HC125SJ, MM74HC125MX, MM74HC125MTC, MM74HC125CW, MM74HC125M Datasheet

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Fairchild Semiconductor MM74HC125SJ, MM74HC125MX, MM74HC125MTC, MM74HC125CW, MM74HC125M Datasheet

September 1983

Revised February 1999

MM74HC125/MM74HC126

3-STATE Quad Buffers

General Description

The MM74HC125 and MM74HC126 are general purpose 3-STATE high speed non-inverting buffers utilizing advanced silicon-gate CMOS technology. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs.

The MM74HC125 require the 3-STATE control input C to be taken high to put the output into the high impedance

condition, whereas the MM74HC126 require the control input to be low to put the output into high impedance.

All inputs are protected from damage due to static discharge by diodes to VCC and ground.

Features

Typical propagation delay: 13 ns

Wide operating voltage range: 2–6V

Low input current: 1 μA maximum

Low quiescent current: 80 μA maximum (74HC)

Fanout of 15 LS-TTL loads

Ordering Code:

Order Number

Package Number

Package Description

 

 

 

MM74HC125M

M14A

14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow Body

 

 

 

MM74HC125SJ

M14D

14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide

 

 

 

MM74HC125MTC

MTC14

14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide

 

 

 

MM74HC125N

N14A

14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide

 

 

 

MM74HC126M

M14A

14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow Body

 

 

 

MM74HC126SJ

M14D

14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide

 

 

 

MM74HC126MTC

MTC14

14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide

 

 

 

MM74HC126N

N14A

14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide

 

 

 

Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code. (Tape and Reel not available in N14A.)

Connection Diagrams

Pin Assignments for DIP, SOIC, SOP and TSSOP

Top View (MM74HC125)

Top View (MM74HC126)

 

Truth Tables

 

Inputs

Output

 

 

Inputs

Output

 

 

Y

 

 

 

Y

A

C

 

A

C

 

 

 

 

 

 

 

H

L

H

 

H

H

H

L

L

L

 

L

H

L

X

H

Z

 

X

L

Z

 

 

 

 

 

 

 

Buffers Quad STATE-3 MM74HC125/MM74HC126

© 1999 Fairchild Semiconductor Corporation

DS005308.prf

www.fairchildsemi.com

MM74HC125/MM74HC126

Absolute Maximum Ratings(Note 1)

(Note 2)

 

Supply Voltage (VCC)

0.5 to +7.0V

DC Input Voltage (VIN)

1.5 to VCC +1.5V

DC Output Voltage (VOUT)

0.5 to VCC +0.5V

Clamp Diode Current (IIK, IOK)

±20 mA

DC Output Current, per pin (IOUT)

±35 mA

DC VCC or GND Current, per pin

±70 mA

(ICC)

Storage Temperature Range (TSTG)

65°C to +150°C

Power Dissipation (PD)

 

(Note 3)

600 mW

S.O. Package only

500 mW

Lead Temperature (TL)

260°C

(Soldering 10 seconds)

DC Electrical Characteristics (Note 4)

Recommended Operating

Conditions

 

Min

Max

Units

Supply Voltage (VCC)

2

6

V

DC Input or Output Voltage

0

VCC

V

(VIN, VOUT)

40

+85

°C

Operating Temperature Range (TA)

Input Rise or Fall Times (tr, tf)

 

 

 

VCC = 2.0V

 

1000

ns

VCC = 4.5V

 

500

ns

VCC = 6.0V

 

400

ns

Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.

Note 2: Unless otherwise specified all voltages are referenced to ground.

Note 3: Power Dissipation temperature derating — plastic “N” package: 12 mW/°C from 65°C to 85°C.

Symbol

Parameter

Conditions

VCC

TA = 25°C

TA = −40 to 85°C

TA = −40 to 125°C

Units

Typ

 

Guaranteed Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Minimum HIGH Level

 

2.0V

 

1.5

1.5

1.5

V

 

Input Voltage

 

4.5V

 

3.15

3.15

3.15

V

 

 

 

6.0V

 

4.2

4.2

4.2

V

 

 

 

 

 

 

 

 

 

VIL

Maximum LOW Level

 

2.0V

 

0.5

0.5

0.5

V

 

Input Voltage

 

4.5V

 

1.35

1.35

1.35

V

 

 

 

6.0V

 

1.8

1.8

1.8

V

 

 

 

 

 

 

 

 

 

VOH

Minimum HIGH Level

VIN = VIH or VIL

2.0V

2.0

1.9

1.9

1.9

V

 

Output Voltage

|IOUT| 20 μA

4.5V

4.5

4.4

4.4

4.4

V

 

 

 

6.0V

6.0

5.9

5.9

5.9

V

 

 

 

 

 

 

 

 

 

 

 

VIN = VIH or VIL

 

 

 

 

 

 

 

 

|IOUT| 6.0 mA

4.5V

4.2

3.98

3.84

3.7

V

 

 

|IOUT| 7.8 mA

6.0V

5.7

5.48

5.34

5.2

V

VOL

Maximum LOW Level

VIN = VIH or VIL

2.0V

0

0.1

0.1

0.1

V

 

Output Voltage

|IOUT| 20 μA

4.5V

0

0.1

0.1

0.1

V

 

 

 

6.0V

0

0.1

0.1

0.1

V

 

 

 

 

 

 

 

 

 

 

 

VIN = VIH or VIL

 

 

 

 

 

 

 

 

|IOUT| 6.0 mA

4.5V

0.2

0.26

0.33

0.4

V

 

 

|IOUT| 7.8 mA

6.0V

0.2

0.26

0.33

0.4

V

IOZ

Maximum 3-STATE Output

VIN = VIH or VIL

6.0V

 

±0.5

±5

±10

μA

 

Leakage Current

VOUT = VCC or GND

 

 

 

 

 

 

 

 

Cn = Disabled

 

 

 

 

 

 

IIN

Maximum Input Current

VIN = VCC or GND

6.0V

 

±0.1

±1.0

±1.0

μA

ICC

Maximum Quiescent

VIN = VCC or GND

6.0V

 

8.0

80

160

μA

 

Supply Current

IOUT = 0 μA

 

 

 

 

 

 

Note 4: For a power supply of 5V ±10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing with this supply. Worst case VIH and VIL occur at VCC=5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.

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