MBR1035 - MBR1060
Features
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Low power loss, high efficiency. |
.113(2.87) |
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High surge capacity. |
.103(2.62) |
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•For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
• Metal silicon junction, majority carrier |
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.16(4.06) |
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conduction. |
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.14(3.56) |
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• High current capacity, low forward |
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voltage drop. |
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.037(0.94) |
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• Guard ring for over voltage protection. |
TO-220AC |
.027(0.68) |
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10 Ampere Schottky Barrier Rectifiers
.412(10.5) |
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DIA |
.185(4.70) |
MAX |
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.154(3.91) |
.175(4.44) |
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.148(3.74)
.055(1.40)
.045(1.14)
.27(6.86)
.594(15.1) .23(5.84)
.587(14.91)
Dimensions 1 2 
are in:
inches (mm)
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.11(2.79) |
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.56(14.22) |
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.10(2.54) |
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.53(13.46) |
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PIN 1 |
+ |
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.205(5.20) |
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+ |
.025(0.64) |
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.195(4.95) |
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CASE |
.014(0.35) |
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PIN 2 |
- |
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CASE Positive
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
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IO |
Average Rectified Current |
10 |
A |
if(repetitive) |
Peak Repetitive Forward Current |
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(Rated VR , Square Wave, 20 KHz) @ TA = 135°C |
20 |
A |
if(surge) |
Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
150 |
A |
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Superimposed on rated load (JEDEC method) |
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PD |
Total Device Dissipation |
2.0 |
W |
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Derate above 25°C |
16.6 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient |
60 |
°C/W |
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RθJL |
Thermal Resistance, Junction to Lead |
2.0 |
°C/W |
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Tstg |
Storage Temperature Range |
-65 to +175 |
°C |
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TJ |
Operating Junction Temperature |
-65 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Parameter |
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Device |
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Units |
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1035 |
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1045 |
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1050 |
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1060 |
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Peak Repetitive Reverse Voltage |
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35 |
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45 |
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50 |
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60 |
V |
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Maximum RMS Voltage |
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24 |
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31 |
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35 |
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42 |
V |
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DC Reverse Voltage |
(Rated VR) |
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35 |
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45 |
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50 |
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60 |
V |
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Voltage Rate of Change (Rated VR) |
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10,000 |
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V/uS |
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Maximum Reverse Current |
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@ rated VR |
TA = 25°C |
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0.1 |
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mA |
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TA = 125°C |
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15 |
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mA |
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Maximum Forward Voltage |
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IF = 10 A, TC = 25°C |
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- |
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0.80 |
V |
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IF = 10 A, TC = 125°C |
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0.57 |
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0.70 |
V |
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IF = 20 A, TC = 25°C |
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0.84 |
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0.95 |
V |
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IF = 20 A, TC = 125°C |
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0.72 |
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0.85 |
V |
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Peak Repetitive Reverse Surge |
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1.0 |
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0.5 |
A |
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Current |
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2.0 us Pulse Width, f = 1.0 KHz |
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MBR1060-MBR1035
ã1999 Fairchild Semiconductor Corporation |
MBR1035 - MBR1060, Rev. A |
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