MBR735 - MBR760
Features
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Low power loss, high efficiency. |
.113(2.87) |
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High surge capacity. |
.103(2.62) |
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•For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
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Metal silicon junction, majority carrier |
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.16(4.06) |
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conduction. |
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.14(3.56) |
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High current capacity, low forward |
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voltage drop. |
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.037(0.94) |
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TO-220AC |
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Guard ring for over voltage protection. |
.027(0.68) |
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7.5 Ampere Schottky Barrier Rectifiers
.412(10.5) |
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DIA |
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MAX |
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.185(4.70) |
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.154(3.91) |
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.175(4.44) |
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.148(3.74) |
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.055(1.40) |
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.045(1.14) |
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.27(6.86) |
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.594(15.1) |
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.23(5.84) |
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.587(14.91) |
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1 |
2 |
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Dimensions |
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are in: |
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inches (mm) |
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.56(14.22) |
.11(2.79) |
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.53(13.46) |
.10(2.54) |
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.205(5.20) |
PIN 1 + |
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.195(4.95) |
PIN 2 - |
CASE |
.025(0.64) |
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.014(0.35) |
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CASE Positive
Absolute Maximum Ratings* TA = 25°C unless otherwise noted |
Dimensions are in: inches (mm) |
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Symbol |
Parameter |
Value |
Units |
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IO |
Average Rectified Current |
7.5 |
A |
if(repetitive) |
Peak Repetitive Forward Current |
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(Rated VR , Square Wave, 20 KHz) @ TA = 105°C |
15 |
A |
if(surge) |
Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
150 |
A |
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Superimposed on rated load (JEDEC method) |
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PD |
Total Device Dissipation |
2.0 |
W |
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Derate above 25°C |
16.6 |
mW/°C |
RqJA |
Thermal Resistance, Junction to Ambient |
60 |
°C/W |
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RqJL |
Thermal Resistance, Junction to Lead |
3.0 |
°C/W |
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Tstg |
Storage Temperature Range |
-65 to +175 |
°C |
TJ |
Operating Junction Temperature |
-65 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Parameter |
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Device |
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Units |
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735 |
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745 |
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750 |
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760 |
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Peak Repetitive Reverse Voltage |
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35 |
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45 |
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50 |
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60 |
V |
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Maximum RMS Voltage |
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24 |
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31 |
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35 |
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42 |
V |
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DC Reverse Voltage |
(Rated VR) |
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35 |
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45 |
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50 |
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60 |
V |
Voltage Rate of Change |
(Rated VR) |
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10,000 |
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V/uS |
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Maximum Reverse Current |
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@ rated VR |
TA = 25°C |
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0.1 |
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0.5 |
mA |
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TA = 125°C |
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15 |
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50 |
mA |
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Maximum Forward Voltage |
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IF = 7.5 A, TC = 25°C |
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- |
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0.75 |
V |
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IF = 7.5 A, TC = 125°C |
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0.57 |
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0.65 |
V |
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IF = 15 A, TC = 25°C |
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0.84 |
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V |
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IF = 15 A, TC = 125°C |
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0.72 |
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V |
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Peak Repetitive Reverse Surge Current |
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1.0 |
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0.5 |
A |
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2.0 us Pulse Width, f = 1.0 KHz |
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MBR760 - MBR735
ã1999 Fairchild Semiconductor Corporation |
MBR735 - MBR760, Rev. A |
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