MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
NPN Epitaxial Silicon Transistor |
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TO-126 |
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1. Emitter 2.Collector |
3.Base |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Parameter |
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Value |
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Units |
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VCBO |
Collector-Base Voltage |
: MJE180 |
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60 |
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V |
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: MJE181 |
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80 |
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V |
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: MJE182 |
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100 |
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V |
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VCEO |
Collector-Emitter Voltage |
: MJE180 |
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40 |
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V |
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: MJE181 |
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60 |
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V |
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: MJE182 |
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80 |
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V |
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VEBO |
Emitter-Base Voltage |
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7 |
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V |
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IC |
Collector Current (DC) |
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3 |
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A |
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ICP |
Collector Current (Pulse) |
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6 |
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A |
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IB |
Base Current |
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1 |
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A |
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PC |
Collector Dissipation (Ta=25° C) |
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1.5 |
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W |
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PC |
Collector Dissipation (TC=25° C) |
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12.5 |
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W |
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TJ |
Junction Temperature |
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150 |
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° C |
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TSTG |
Storage Temperature |
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- 65 ~ 150 |
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° C |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
Parameter |
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Test Condition |
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Min. |
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Max. |
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Units |
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BVCEO |
Collector -Emitter Breakdown Voltage |
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: MJE180 |
IC = 10mA, IB = 0 |
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40 |
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V |
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: MJE181 |
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60 |
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V |
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: MJE182 |
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80 |
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V |
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ICBO |
Collector Cut-off Current |
: MJE180 |
VCB = 60V, IB = 0 |
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0.1 |
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A |
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: MJE181 |
VCB = 80V, IE = 0 |
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0.1 |
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A |
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: MJE182 |
VCB = 100V, IE = 0 |
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0.1 |
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A |
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: MJE180 |
VCB = 60V, IE = 0 @ TC = 150° C |
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0.1 |
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mA |
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: MJE181 |
VCB = 80V, IE = 0 @ TC = 150° C |
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0.1 |
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mA |
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: MJE182 |
VCB = 100V, IE = 0 @ TC = 150° C |
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0.1 |
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mA |
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IEBO |
Emitter Cut-off Current |
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VBE = 7V, IC = 0 |
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0.1 |
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A |
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hFE |
DC Current Gain |
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VCE = 1V, IC = 100mA |
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50 |
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250 |
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VCE = 1V, IC = 500mA |
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30 |
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VCE = 1V, IC = 1.5A |
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12 |
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VCE(sat) |
Collector-Emitter Saturation Voltage |
IC = 500mA, IB = 50mA |
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0.3 |
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V |
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IC = 1.5A, IB = 150mA |
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0.9 |
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V |
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IC = 3A, IB = 600mA |
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1.7 |
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V |
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VBE(sat) |
Base-Emitter Saturation Voltage |
IC = 1.5A, IB = 150mA |
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1.5 |
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V |
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IC = 3A, IB = 600mA |
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2.0 |
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V |
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VBE(on) |
Base-Emitter ON Voltage |
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VCE = 1V, IC = 500mA |
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1.2 |
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V |
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fT |
Current Gain Bandwidth Product |
VCE = 10V, IC = 100mA |
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50 |
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MHz |
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Cob |
Output Capacitance |
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VCB = 10V, IE = 0, f = 0.1MHz |
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30 |
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pF |
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MJE180/181/182
©2001 Fairchild Semiconductor Corporation |
Rev. A1, February 2001 |
Typical Characteristics
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5 |
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IB=200mA |
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CURRENT |
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IB |
= 180mA |
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4 |
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I |
= 160mA |
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B IB |
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B I |
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= 80mA |
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= 140mA |
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I |
= 120mA |
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B |
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I |
= 100mA |
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COLLECTOR[A], |
3 |
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B |
IB |
= 60mA |
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IB = 40mA |
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2 |
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IB = 20mA |
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C |
1 |
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I |
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0 |
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0 |
1 |
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3 |
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4 |
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5 |
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10 |
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VCE[V], COLLECTOR-EMITTER VOLTAGE |
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Figure 1. Static Characteristic
VOLTAGE |
10 |
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IC = 10IB |
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SATURATION |
1 |
VBE(sat) |
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(sat)[V], |
0.1 |
VCE(sat) |
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CE |
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(sat), V |
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BE |
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V |
0.01 |
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0.01 |
0.1 |
1 |
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IC[A], COLLECTOR CURRENT |
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Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
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10 |
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ICMAX.(Pulse) |
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500 |
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CURRENT |
IC MAX.(DC) |
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s |
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100 |
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5ms |
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Dissipation |
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1 |
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Limited |
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[A], COLLECTOR |
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S/B |
Limited |
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0.1 |
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MJE180 |
MJE181 |
MJE182 |
MAX. |
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C |
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I |
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CE |
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0.01 |
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V |
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1 |
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10 |
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100 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
GAINCURRENT |
1000 |
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100 |
VCE = 5V |
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DC, |
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VCE=1V |
10 |
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FE |
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h
1
10 |
100 |
1000 |
10000 |
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
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1000 |
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f=0.1MHZ |
CAPACITANCE |
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IE=0 |
100 |
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[pF], |
10 |
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ob |
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C |
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1 |
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0.1 |
1 |
10 |
100 |
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
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16 |
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14 |
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DISSIPATION |
12 |
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10 |
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8 |
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POWER |
6 |
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[W], |
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C |
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P |
2 |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC[oC], CASE TEMPERATURE |
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Figure 6. Power Derating
MJE180/181/182
©2001 Fairchild Semiconductor Corporation |
Rev. A1, February 2001 |
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