Fairchild Semiconductor MCT5200, MCT5211, MCT5201, MCT5210 Datasheet

LOW INPUT CURRENT

PHOTOTRANSISTOR OPTOCOUPLERS

MCT5200	MCT5201	MCT5210	MCT5211

Description

The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.

The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering

250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible.

The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.

Features

•High CTRCE(SAT) comparable to Darlingtons

•CTR guaranteed 0°C to 70°C

•High common mode transient rejection 5kV/µs

•Data rates up to 150 kbits/s (NRZ)

•Underwriters Laboratory (UL) recognized (file #E90700)

•VDE recognized (file #94766)

– Add option 300 (e.g., MCT5211.300)

Applications

•CMOS to CMOS/LSTTL logic isolation

•LSTTL to CMOS/LSTTL logic isolation

•RS-232 line receiver

•Telephone ring detector

•AC line voltage sensing

•Switching power supply

6	6

1

1

6

1

SCHEMATIC

ANODE	1						6	BASE
CATHODE	2				5			COL
	3
				4				EMITTER

	Parameters		Symbol	Device	Value	Units
	TOTAL DEVICE
	Storage Temperature		TSTG	All	-55 to +150	°C
	Operating Temperature		TOPR	All	-55 to +100	°C
	Lead Solder Temperature		TSOL	All	260 for 10 sec	°C
	Total Device Power Dissipation @ 25°C (LED plus detector)		PD	All	260	mW
	Derate Linearly From 25°C				3.5	mW/°C
	EMITTER
	Continuous Forward Current		IF	All	50	mA
	Reverse Input Voltage		VR	All	6	V
	Forward Current - Peak (1 µs pulse, 300 pps)		IF(pk)	All	3.0	A
	LED Power Dissipation		PD	All	75	mW
	Derate Linearly From 25°C			All	1.0	mW/°C
	DETECTOR
	Continuous Collector Current		IC	All	150	mA
	Detector Power Dissipation		PD	All	150	mW
	Derate Linearly from 25°C			All	2.0	mW/°C
© 2003 Fairchild Semiconductor Corporation		Page 1 of 11				6/10/03

LOW INPUT CURRENT

PHOTOTRANSISTOR OPTOCOUPLERS

MCT5200	MCT5201	MCT5210	MCT5211

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameters	Test Conditions	Symbol			Device	Min	Typ**	Max	Units
EMITTER
Input Forward Voltage	(IF = 5 mA)		VF		All		1.25	1.5	V
Forward Voltage Temp.	(IF = 2 mA)		∆VF		All		-1.75		mV/
Coefficient			∆TA						°C
Reverse Voltage	(IR = 10 µA)		VR		All	6			V
Junction Capacitance	(VF = 0 V, f = 1.0 MHz)		CJ		All		18		pF
DETECTOR
Collector-Emitter Breakdown Voltage	(IC = 1.0 mA, IF = 0)	BVCEO			All	30	100		V
Collector-Base Breakdown Voltage	(IC = 10 µA, IF = 0)	BVCBO			All	30	120		V
Emitter-Base Breakdown Voltage	(IC = 10 µA, IF = 0)	BVEBO			All	5	10		V
Collector-Emitter Dark Current	(VCE = 10V, IF = 0, RBE = 1MΩ)		ICER		All		1	100	nA
Capacitance Collector to Emitter	(VCE = 0, f = 1 MHz)		CCE		All		10		pF
Collector to Base	(VCB = 0, f = 1 MHz)		CCB		All		80		pF
Emitter to Base	(VEB = 0, f = 1 MHz)		CEB		All		15		pF

ISOLATION CHARACTERISTICS
Characteristic		Test Conditions	Symbol	Device	Min	Typ**	Max	Units
Input-Output Isolation	(f = 60Hz, t = 1 min.)		VISO	All	5300			Vac(rms)
(10)
Voltage
Isolation Resistance(10)	V	= 500 VDC, T = 25°C	R	All	1011			Ω
	I-O	A	ISO
Isolation Capacitance(9)	VI-O = 0, f = 1 MHz		CISO	All		0.7		pF
Common Mode Transient	VCM = 50 VP-P1, RL= 750Ω, IF = 0		CMH	MCT5210/11		5000		V/µs
Rejection – Output High	VCM = 50 VP-P, RL= 1KΩ, IF = 0			MCT5200/01
Common Mode Transient	VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA		CML	MCT5210/11		5000		V/µs
Rejection – Output Low	VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA			MCT5200/01

**All typical TA=25°C

© 2003 Fairchild Semiconductor Corporation

Page 2 of 11

6/10/03

LOW INPUT CURRENT

PHOTOTRANSISTOR OPTOCOUPLERS

MCT5200

MCT5201

MCT5210

MCT5211

TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.)

DC Characteristics

Test Conditions

Symbol

Device

Min

Typ**

Max

Units

IF = 10 mA, VCE = 0.4 V

MCT5200

75

Saturated Current

IF = 5 mA, VCE = 0.4 V

MCT5201

120

Transfer Ratio(1)

IF = 3.0 mA, VCE = 0.4 V

CTRCE(SAT)

MCT5210

60

%

(Collector to Emitter)

IF = 1.6 mA, VCE = 0.4 V

MCT5211

100

IF = 1.0 mA, VCE = 0.4 V

75

Current Transfer Ratio

IF = 3.0 mA, VCE = 5.0 V

MCT5210

70

IF = 1.6 mA, VCE = 5.0 V

CTR(CE)

150

%

(1)

(Collector to Emitter)

MCT5211

IF = 1.0 mA, VCE = 5.0 V

110

IF = 10 mA, VCB = 4.3 V

MCT5200

0.2

Current Transfer Ratio

IF = 5 mA, VCB = 4.3 V

MCT5201

0.28

IF = 3.0 mA, VCE = 4.3 V

CTR(CB)

MCT5210

0.2

%

Collector to Base(2)

IF = 1.6 mA, VCE = 4.3 V

MCT5211

0.3

IF = 1.0 mA, VCE = 4.3 V

0.25

IF = 10 mA, ICE = 7.5 mA

MCT5200

0.4

Saturation Voltage

IF = 5 mA, ICE = 6 mA

VCE(SAT)

MCT5201

0.4

V

IF = 3.0 mA, ICE = 1.8 mA

MCT5210

0.4

IF = 1.6 mA, ICE = 1.6 mA

MCT5211

0.4

AC Characteristics

Test Conditions

Symbol

Device

Min

Typ

Max

Units

RL = 330 Ω, RBE = ∞

IF = 3.0 mA

MCT5210

10

RL = 3.3 kΩ, RBE = 39 kΩ

VCC = 5.0 V

7

RL = 750 Ω, RBE = ∞

IF = 1.6mA

14

Propagation Delay

RL = 4.7 kΩ, RBE = 91 kΩ

VCC = 5.0V

TPHL

MCT5211

15

µs

(3)

RL = 1.5 kΩ, RBE = ∞

IF = 1.0mA

17

High to Low

RL = 10 kΩ, RBE = 160 kΩ

VCC = 5.0V

24

V

= 0.4V, V

= 5V,

IF = 10mA

MCT5200

1.6

12

CE

CC

RL = fig. 13, RBE = 330 kΩ

I = 5mA

MCT5201

3

30

F

RL = 330 Ω, RBE = ∞

IF = 3.0 mA

MCT5210

0.4

RL = 3.3 kΩ, RBE = 39 kΩ

VCC = 5.0 V

8

RL = 750 Ω, RBE = ∞

IF = 1.6mA

2.5

Propagation Delay

RL = 4.7 kΩ, RBE = 91 kΩ

VCC = 5.0V

TPLH

MCT5211

11

µs

(4)

RL = 1.5 kΩ, RBE = ∞

IF = 1.0mA

7

Low to High

RL = 10 kΩ, RBE = 160 kΩ

VCC = 5.0 V

16

V

= 0.4V, V

= 5V,

IF = 10mA

MCT5200

18

20

CE

CC

RL = fig. 13, RBE = 330 kΩ

I = 5mA

MCT5201

12

13

F

Delay Time(5)

VCE = 0.4V,

IF = 10mA

MCT5200

0.5

7

R

= 330 kΩ,

t

d

µs

BE

IF = 5mA

MCT5201

1.1

15

RL = 1 kΩ, VCC = 5V

Rise Time(6)

VCE = 0.4V,

IF = 10mA

MCT5200

1.3

6

R

= 330 kΩ,

t

r

µs

BE

IF = 5mA

MCT5201

2.5

20

RL = 1 kΩ, VCC = 5V

© 2003 Fairchild Semiconductor Corporation

Page 3 of 11

6/10/03

LOW INPUT CURRENT

PHOTOTRANSISTOR OPTOCOUPLERS

MCT5200

MCT5201

MCT5210

MCT5211

TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) (Continued)

DC Characteristics

Test Conditions

Symbol

Device

Min

Typ**

Max

Units

Storage Time(7)

VCE = 0.4V,

IF = 10mA

MCT5200

15

18

R = 330 kΩ,

t

s

µs

BE

IF = 5mA

MCT5201

10

13

RL = 1 kΩ, VCC = 5V

Fall Time(8)

VCE = 0.4V,

IF = 10mA

MCT5200

16

30

R = 330 kΩ,

t

f

µs

BE

IF = 5mA

MCT5201

16

30

RL = 1 kΩ, VCC = 5V

**All typicals at TA = 25°C

Notes

1.DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE).

2.The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%.

3.Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse.

4.Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse.

5.Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.

6.Rise time (tr) is measured from 90% to 10% of Vo falling edge.

7.Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.

8.Fall time (tf) is measured from 10% to 90% of Vo rising edge.

9.CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).

10.Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.

© 2003 Fairchild Semiconductor Corporation

Page 4 of 11

6/10/03