MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
• Complement to MJE800/801/802/803
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TO-126 |
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1. Emitter 2.Collector |
3.Base |
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PNP Epitaxial Silicon Darlington Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Equivalent Circuit |
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C |
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Sym- |
Parameter |
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Value |
Unit |
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VCBO |
CollectorBase Voltage |
: MJE700/701 |
- 60 |
V |
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: MJE702/703 |
- 80 |
V |
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B |
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VCEO |
Collector-Emitter Voltage |
: MJE700/701 |
- 60 |
V |
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: MJE702/703 |
- 80 |
V |
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VEBO |
EmitterBase Voltage |
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- 5 |
V |
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IC |
Collector Current |
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- 4 |
A |
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R1 |
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R2 |
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IB |
Base Current |
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- 0.1 |
A |
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R1 10kΩ |
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E |
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PC |
Collector Dissipation (TC=25° C) |
40 |
W |
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R2 0.6kΩ |
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TJ |
Junction Temperature |
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150 |
° C |
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TSTG |
Storage Temperature |
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- 55 ~ 150 |
° C |
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Electrical Characteristics TC=25° C unless otherwise noted
Symbol |
Parameter |
Test Condition |
Min. |
Max. |
Units |
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BVCEO |
Collector-Emitter Breakdown Voltage |
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: MJE700/701 |
IC = - 10mA, IB = 0 |
-60 |
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V |
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: MJE702/703 |
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-80 |
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V |
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ICEO |
Collector Cut-off Current |
VCE = - 60V, IB = 0 |
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A |
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: MJE700/701 |
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-100 |
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: MJE702/703 |
VCE = - 80V, IB = 0 |
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-100 |
A |
ICBO |
Collector Cut-off Current |
VCB = Rated BVCEO, IE = 0 |
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-100 |
A |
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VCB = Rated BVCEO, IE = 0 |
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-500 |
A |
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TC = 100° C |
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IEBO |
Emitter Cut-off Current |
VBE = - 5V, IC = 0 |
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-2 |
mA |
hFE |
DC Current Gain |
VCE = - 3V, IC = - 1.5A |
750 |
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: MJE700/702 |
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: MJE701/703 |
VCE = - 3V, IC = - 2A |
750 |
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: ALL DEVICES |
VCE = - 3V, IC = - 4A |
100 |
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VCE(sat) |
Collector-Emitter Saturation Voltage |
IC = - 1.5A, IB = - 30mA |
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-2.5 |
V |
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: MJE700/702 |
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: MJE701/703 |
IC = - 2A, IB = - 40mA |
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-2.8 |
V |
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: ALL DEVICES |
IC = - 4A, IB = - 40mA |
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-3 |
V |
VBE(on) |
Base-Emitter On Voltage |
VCE = - 3V, IC = - 1.5A |
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-1.2 |
V |
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: MJE700/702 |
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: MJE701/703 |
VCE = - 3V, IC = - 2A |
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-2.5 |
V |
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: ALL DEVICES |
VCE = - 3V, IC = - 4A |
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-3 |
V |
MJE700/701/702/703
©2001 Fairchild Semiconductor Corporation |
Rev. A1, February 2001 |
Typical Characteristics
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-5 |
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IB= -1000 s |
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CURRENT |
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IB= -900 s |
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s |
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-4 |
IB= -800 s |
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IB= |
-400 |
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s |
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IB= -700 s |
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IB= |
-300 |
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IB= -600 s |
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(A),COLLECTOR |
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-3 |
IB= -500 s |
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IB= |
-200 |
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-2 |
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IB= -100 s |
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C |
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I |
-1 |
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-0 |
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-0 |
-1 |
-2 |
-3 |
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-4 |
-5 |
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
VOLTAGE |
-100 |
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IC = 500 IB |
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SATURATION |
-10 |
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(sat)[V], |
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VBE(sat) |
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-1 |
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CE |
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VCE(sat) |
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(sat), V |
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BE |
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V |
-0.1 |
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-0.01 |
-0.1 |
-1 |
-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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-100 |
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CURRENT |
-10 |
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100 |
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1ms |
s |
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COLLECTOR |
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5ms |
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D |
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. |
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C |
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. |
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-1 |
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[A], |
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MJE700/701 |
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C |
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I |
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MJE702/703 |
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-0.1 |
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-1 |
-10 |
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-100 |
-1000 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
GAINCURRENT |
10k |
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MJE700/701/702/703 |
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VCE = -3V |
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1k |
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DC, |
100 |
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FE |
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h |
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10 |
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-0.01 |
-0.1 |
-1 |
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-10 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. DC current Gain
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1000 |
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f=0.1MHZ |
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IE=0 |
CAPACITANCE |
100 |
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[pF], |
10 |
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ob |
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C |
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1 |
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-0.01 |
-0.1 |
-1 |
-10 |
-100 |
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
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60 |
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50 |
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DISSIPATION |
40 |
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30 |
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[W], POWER |
20 |
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C |
10 |
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P |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC[oC], CASE TEMPERATURE |
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Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation |
Rev. A1, February 2001 |
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