September 1983
Revised December 1999
MM74HC08
Quad 2-Input AND Gate
General Description
The MM74HC08 AND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. The HC08 has buffered outputs, providing high noise immunity and the ability to drive 10 LS-TTL loads. The 74HC logic family is functionally as well as pin-out compatible with the standard 74LS logic family. All inputs are protected from damage due to static discharge by internal diode clamps to VCC and ground.
Features
■Typical propagation delay: 7 ns (tPHL), 12 ns (tPLH)
■Fanout of 10 LS-TTL loads
■Quiescent power consumption: 2 μA maximum at room temperature
■Low input current: 1 μA maximum
Ordering Code:
Order Number |
Package Number |
Package Description |
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MM74HC08M |
M14A |
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Wide |
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MM74HC08SJ |
M14D |
14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide |
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MM74HC08MTC |
MTC14 |
14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide |
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MM74HC08N |
N14A |
14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide |
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Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code. (Tape and Reel not available in N14A)
Connection Diagram
Top View
Gate AND Input-2 Quad MM74HC08
© 1999 Fairchild Semiconductor Corporation |
DS005297 |
www.fairchildsemi.com |
MM74HC08
Absolute Maximum Ratings(Note 1) |
Recommended Operating |
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(Note 2) |
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Conditions |
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Supply Voltage (VCC) |
−0.5 to +7.0V |
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Min |
Max |
Units |
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DC Input Voltage (VIN) |
−1.5 to VCC +1.5V |
Supply Voltage (VCC) |
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2 |
6 |
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V |
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DC Output Voltage (VOUT) |
−0.5 to VCC +0.5V |
DC Input or Output Voltage |
0 |
V |
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V |
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Clamp Diode Current (IIK, IOK) |
±20 mA |
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CC |
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(V |
IN |
, V |
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DC Output Current, per pin (IOUT) |
±25 mA |
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OUT |
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Operating Temperature Range (T ) |
−40 |
+85 |
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°C |
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DC VCC or GND Current, per pin |
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A |
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Input Rise or Fall Times |
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(ICC) |
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±50 mA |
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(t , t ) |
V |
CC |
= 2.0V |
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1000 |
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ns |
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Storage Temperature Range (TSTG) |
−65°C to +150°C |
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f |
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VCC = 4.5V |
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500 |
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ns |
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Power Dissipation (PD) |
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VCC = 6.0V |
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400 |
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ns |
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(Note 3) |
600 mW Note 1: Absolute Maximum Ratings are those values beyond which dam- |
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S.O. Package only |
500 mW |
age to the device may occur. |
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Note 2: Unless otherwise specified all voltages are referenced to ground. |
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Lead Temperature (TL) |
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Note 3: Power Dissipation temperature derating — plastic “N” package: − |
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(Soldering 10 seconds) |
260°C 12 mW/°C from 65°C to 85°C. |
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DC Electrical Characteristics (Note 4) |
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VCC |
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TA = 25°C |
TA = −40 to 85°C |
TA = −40 to 125°C |
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Symbol |
Parameter |
Conditions |
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Units |
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Typ |
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Guaranteed Limits |
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VIH |
Minimum HIGH Level |
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2.0V |
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1.5 |
1.5 |
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1.5 |
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V |
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Input Voltage |
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4.5V |
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3.15 |
3.15 |
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3.15 |
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V |
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6.0V |
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4.2 |
4.2 |
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4.2 |
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V |
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VIL |
Maximum LOW Level |
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2.0V |
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0.5 |
0.5 |
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0.5 |
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V |
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Input Voltage |
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4.5V |
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1.35 |
1.35 |
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1.35 |
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V |
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6.0V |
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1.8 |
1.8 |
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1.8 |
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V |
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VOH |
Minimum HIGH Level |
VIN = VIH |
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Output Voltage |
|IOUT| ≤ 20 μA |
2.0V |
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2.0 |
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1.9 |
1.9 |
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1.9 |
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V |
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4.5V |
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4.5 |
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4.4 |
4.4 |
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4.4 |
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V |
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6.0V |
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6.0 |
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5.9 |
5.9 |
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5.9 |
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V |
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VIN = VIH |
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|IOUT| ≤ 4.0 mA |
4.5V |
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4.2 |
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3.98 |
3.84 |
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3.7 |
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V |
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|IOUT| ≤ 5.2 mA |
6.0V |
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5.7 |
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5.48 |
5.34 |
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5.2 |
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V |
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VOL |
Maximum LOW Level |
VIN = VIH or VIL |
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Output Voltage |
|IOUT| ≤ 20 μA |
2.0V |
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0 |
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0.1 |
0.1 |
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0.1 |
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V |
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4.5V |
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0 |
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0.1 |
0.1 |
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0.1 |
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V |
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6.0V |
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0 |
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0.1 |
0.1 |
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0.1 |
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V |
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VIN = VIH or VIL |
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|IOUT| ≤ 4.0 mA |
4.5V |
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0.2 |
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0.26 |
0.33 |
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0.4 |
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V |
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|IOUT| ≤ 5.2 mA |
6.0V |
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0.2 |
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0.26 |
0.33 |
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0.4 |
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V |
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IIN |
Maximum Input Current |
VIN = VCC or GND |
6.0V |
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±0.1 |
±1.0 |
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±1.0 |
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μA |
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ICC |
Maximum Quiescent Supply Current |
VIN = VCC or GND |
6.0V |
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2.0 |
20 |
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40 |
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μA |
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IOUT = 0 μA |
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Note 4: For a power supply of 5V ±10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing with this supply. Worst case VIH and VIL occur at VCC = 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.
www.fairchildsemi.com |
2 |
AC Electrical Characteristics |
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MM74HC08 |
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VCC = 5V, TA = 25°C, CL = 15 pF, tr = tf = 6 ns |
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Symbol |
Parameter |
Conditions |
Typ |
Guaranteed |
Units |
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Limit |
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tPHL |
Maximum Propagation |
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12 |
20 |
ns |
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Delay, Output HIGH-to-LOW |
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tPLH |
Maximum Propagation |
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7 |
15 |
ns |
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Delay, Output LOW-to-HIGH |
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AC Electrical Characteristics
VCC = 2.0V to 6.0V, CL = 50 pF, tr = tf = 6 ns (unless otherwise specified)
Symbol |
Parameter |
Conditions |
VCC |
TA = 25°C |
TA = −40 to 125°C |
Units |
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Typ |
Guaranteed Limits |
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tPHL |
Maximum Propagation Delay, |
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2.0V |
77 |
121 |
175 |
ns |
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Output HIGH-to-LOW |
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4.5V |
15 |
24 |
35 |
ns |
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6.0V |
13 |
20 |
30 |
ns |
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tPLH |
Maximum Propagation Delay, |
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2.0V |
30 |
90 |
134 |
ns |
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Output LOW-to-HIGH |
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4.5V |
10 |
18 |
27 |
ns |
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6.0V |
8 |
15 |
23 |
ns |
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tTLH, tTHL |
Maximum Output |
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2.0V |
30 |
75 |
110 |
ns |
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Rise and Fall Time |
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4.5V |
8 |
15 |
22 |
ns |
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6.0V |
7 |
13 |
19 |
ns |
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CPD |
Power Dissipation Capacitance (Note 5) |
(per gate) |
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38 |
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pF |
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CIN |
Maximum Input Capacitance |
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4 |
10 |
10 |
pF |
Note 5: CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC, and the no load dynamic current consumption, IS = CPD VCC f + ICC.
3 |
www.fairchildsemi.com |