Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
Features
•Low power loss, high efficiency.
•High surge capacity.
•For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
•Metal silicon junction, majority carrier conduction.
•High current capacity, low forward voltage drop.
•Guard ring for over voltage protection.
0.113(2.87)
0.103(2.62)
TO-220AB
0.16(4.06)
0.14(3.56)
PIN 1
+
PIN 3 |
CASE |
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PIN 2 |
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0.037(0.94) |
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0.027(0.68) |
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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0.185(4.70) |
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0.412(10.5) |
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0.175(4.44) |
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MAX |
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0.154(3.91) |
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0.055(1.40) |
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0.045(1.14) |
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0.148(3.74) |
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0.27(6.86)
0.23(5.84)
0.594(15.1)
0.587(14.9)
1 2 3
0.11(2.79)
0.10(2.54)
0.56(14.22) 0.53(13.46)
0.025(0.64)
0.105(2.67) 0.014(0.35)
0.095(2.41)
Dimensions are in: inches (mm)
Symbol |
Parameter |
Value |
Units |
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IO |
Average Rectified Current |
30 |
A |
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.375 " lead length @ TA = 130°C |
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if(repetitive) |
Peak Repetitive Forward Current |
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(Rated VR , Square Wave, 20 KHz) @ TA = 130°C |
30 |
A |
if(surge) |
Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
150 |
A |
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Superimposed on rated load (JEDEC method) |
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PD |
Total Device Dissipation |
2.0 |
W |
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Derate above 25°C |
16.6 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient |
60 |
°C/W |
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RθJL |
Thermal Resistance, Junction to Lead |
1.5 |
°C/W |
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Tstg |
Storage Temperature Range |
-65 to +175 |
°C |
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TJ |
Operating Junction Temperature |
-65 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Parameter |
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Device |
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Units |
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2535CT |
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2545CT |
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2550CT |
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2560CT |
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Peak Repetitive Reverse Voltage |
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35 |
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45 |
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50 |
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60 |
V |
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Maximum RMS Voltage |
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24 |
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31 |
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35 |
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42 |
V |
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DC Reverse Voltage |
(Rated VR) |
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35 |
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45 |
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50 |
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60 |
V |
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Voltage Rate of Change (Rated VR) |
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10,000 |
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V/uS |
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Maximum Reverse Current |
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@ rated VR |
TA = 25°C |
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0.2 |
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1.0 |
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mA |
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TA = 125°C |
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40 |
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50 |
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mA |
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Maximum Forward Voltage |
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IF = 15 A, TC = 25°C |
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- |
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0.75 |
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V |
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IF = 15 A, TC = 125°C |
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- |
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0.65 |
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V |
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IF = 30 A, TC = 25°C |
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0.82 |
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- |
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V |
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IF = 30 A, TC = 125°C |
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0.73 |
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- |
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V |
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Peak Repetitive Reverse Surge |
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1.0 |
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0.5 |
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A |
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Current |
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2.0 us Pulse Width, f = 1.0 KHz |
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MBR2560CT - MBR2535CT
ã1999 Fairchild Semiconductor Corporation |
MBR2535CT - MBR2560CT, Rev. A |
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