Fairchild Semiconductor MCT2201, MCT2200, MCT210, MCT2, MCT2E Datasheet

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2	MCT2E	MCT210	MCT271
MCT2200	MCT2201	MCT2202
WHITE PACKAGE (-M SUFFIX)		BLACK PACKAGE (NO -M SUFFIX)
6		6	6
	6		1
	1
	1		1
6		6
	1		1
DESCRIPTION

The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

FEATURES

•UL recognized (File # E90700)

•VDE recognized (File # 94766)

-Add option V for white package (e.g., MCT2V-M) -Add option 300 for black package (e.g., MCT2.300)

• MCT2 and MCT2E are also available in white package by specifying -M suffix, eg. MCT2-M

APPLICATIONS

•Power supply regulators

•Digital logic inputs

•Microprocessor inputs

SCHEMATIC

1		6
2		5
3	NC	4

PIN 1. ANODE

2.CATHODE

3.NO CONNECTION

4.EMITTER

5.COLLECTOR

6.BASE

2001 Fairchild Semiconductor Corporation
DS300234	1/3/02	1 OF 13	www.fairchildsemi.com

PHOTOTRANSISTOR OPTOCOUPLERS

	MCT2	MCT2E			MCT210			MCT271
	MCT2200	MCT2201			MCT2202
	ABSOLUTE MAXIMUM RATINGS
	Parameter			Symbol	Device		Value	Units
	TOTAL DEVICE			TSTG	ALL		-55 to +150	°C
	Storage Temperature
	Operating Temperature			TOPR	ALL		-55 to +100	°C
	Lead Solder Temperature			TSOL	ALL		260 for 10 sec	°C
	Total Device Power Dissipation @ TA = 25°C				-M		250	mW
				PD	Non-M		260
	Derate above 25°C				-M		2.94	mW/°C
					Non-M		3.3
	EMITTER			IF	-M		60	mA
	DC/Average Forward Input Current				Non-M		100
	Reverse Input Voltage			VR	ALL		3	V
	Forward Current - Peak (300µs, 2% Duty Cycle)			IF(pk)	ALL		3	A
	LED Power Dissipation @ TA = 25°C			PD	-M		120	mW
					Non-M		150
	Derate above 25°C				-M		1.41	mW/°C
					Non-M		2.0
	DETECTOR			IC	ALL		50	mA
	Collector Current
	Collector-Emitter Voltage			VCEO	ALL		30	V
	Detector Power Dissipation @ TA = 25°C				ALL		150	mW
	Derate above 25°C			PD	-M		1.76	mW/°C
					Non-M		2.0

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1/3/02

DS300234

PHOTOTRANSISTOR OPTOCOUPLERS

MCT2	MCT2E	MCT210	MCT271
MCT2200	MCT2201	MCT2202

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter

Test Conditions

Symbol

Device

Min

Typ**

Max

Unit

EMITTER

MCT2/-M

MCT2E/-M

MCT271

Input Forward Voltage

(IF = 20 mA)

VF

MCT2200

1.25

1.50

V

MCT2201

MCT2202

(TA = 0-70°C, IF = 40 mA)

MCT210

1.33

MCT2/-M

MCT2E/-M

MCT271

Reverse Leakage Current

(VR = 3.0 V)

IR

MCT2200

0.001

10

µA

MCT2201

MCT2202

(TA = 0-70°C, VR = 6.0 V)

MCT210

DETECTOR

(IC = 1.0 mA, IF = 0)

BVCEO

ALL

30

100

V

Collector-Emitter Breakdown Voltage

(TA = 0-70°C)

MCT210

MCT2/-M

MCT2E/-M

MCT271

70

120

Collector-Base Breakdown Voltage

(IC = 10 µA, IF = 0)

BVCBO

MCT2200

V

MCT2201

MCT2202

(TA = 0-70°C)

MCT210

30

MCT2/-M

MCT2E/-M

MCT271

7

10

Emitter-Collector Breakdown Voltage

(IE = 100 µA, IF = 0)

BVECO

MCT2200

V

MCT2201

MCT2202

(TA = 0-70°C)

MCT210

6

10

Collector-Emitter Dark Current

(VCE = 10 V, IF = 0)

ICEO

ALL

1

50

nA

(VCE = 5 V, TA = 0-70°C)

30

µA

Collector-Base Dark Current

(VCB = 10 V, IF = 0)

ICBO

ALL

20

nA

Capacitance

(VCE = 0 V, f = 1 MHz)

CCE

ALL

8

pF

** Typical values at TA = 25°C

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PHOTOTRANSISTOR OPTOCOUPLERS

	MCT2		MCT2E		MCT210				MCT271
	MCT2200		MCT2201		MCT2202
	TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
	DC Characteristic		Test Conditions	Symbol	Device		Min	Typ**	Max	Unit
			(TA = 0-70°C)		MCT210		150
			(IF = 10 mA, VCE = 5 V)		MCT2200		20
					MCT2201		100
					MCT2202		63		125
	Output Collector				MCT2
				CTR	MCT2-M					%
	Current						20
			(IF = 10 mA, VCE = 10 V)		MCT2E
					MCT2E-M
					MCT271		45		90
		(IF = 3.2 mA to 32 mA, VCE = 0.4 V)			MCT210		50
			(TA = 0-70°C)
					MCT2
					MCT2-M
			(IC = 2 mA, IF = 16 mA)		MCT2E
	Collector-Emitter				MCT2E-M
					MCT271				0.4	V
	Saturation Voltage
		(IC = 16 mA, IF = 32 mA, TA = 0-70°C)		VCE (SAT)	MCT210
					MCT2200
			(IC = 2.5 mA, IF = 10 mA)		MCT2201
					MCT2202
	AC Characteristic	(IF = 15 mA, VCC = 5 V, RL = 2 k1)			MCT2			1.1
	Saturated Turn-on Time		(RB = Open) (Fig. 20)	ton	MCT2E			1.1
	from 5 V to 0.8 V	(IF = 20 mA, VCC = 5 V, RL = 2 k1)			MCT2			1.3
			(RB = 100 k1 ) (Fig. 20)		MCT2E			1.3
		(IF = 15 mA, VCC = 5 V, RL = 2 k1)			MCT2			50
	Saturated Turn-off Time		(RB = Open) (Fig. 20)	toff	MCT2E			50
	from SAT to 2.0 V	(IF = 20 mA, VCC = 5 V, RL = 2 k1)			MCT2			20
			(RB = 100 k1 ) (Fig. 20)		MCT2E			20		µs
	Turn-on Time	(IF = 10 mA, VCC = 10 V, RL = 100 1)		ton	MCT2-M			2
					MCT2E-M
	Turn-off Time	(IF = 10 mA, VCC = 10 V, RL = 100 1)		toff	MCT2-M			2
					MCT2E-M
	Rise Time	(IF = 10 mA, VCC = 10 V, RL = 100 1)		tr	MCT2-M			2
					MCT2E-M
	Fall Time	(IF = 10 mA, VCC = 10 V, RL = 100 1)		tf	MCT2-M			1.5
					MCT2E-M

** Typical values at TA = 25°C

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