Fairchild Semiconductor MJE803, MJE801, MJE800 Datasheet

MJE800/801/802/803

Monolithic Construction With Built-in BaseEmitter Resistors

• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC

• Complement to MJE700/701/702/703

1	TO-126
1. Emitter	2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25° C unless otherwise noted

Equivalent Circuit

C

Symbol

Parameter

Value

Units

VCBO

CollectorBase Voltage

: MJE800/801

60

V

: MJE802/803

80

V

B

VCEO

Collector-Emitter Voltage

: MJE800/801

60

V

: MJE802/803

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

4

A

IB

Base Current

0.1

A

R1

R2

PC

Collector Dissipation (TC=25° C)

40

W

R1 10kΩ

E

TJ

Junction Temperature

150

° C

R2 0.6kΩ

TSTG

Storage Temperature

- 55 ~ 150

° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

IC = 50mA, IB = 0

: MJE800/801

60

V

: MJE802/803

80

V

ICEO

Collector Cut-off Current

VCE = 60V, IB = 0

100

A

: MJE800/801

: MJE802/803

VCE = 80V, IB = 0

100

A

ICBO

Collector Cut-off Current

VCB = Rated BVCEO, IE = 0

100

A

VCB = Rated BVCEO, IE = 0

500

A

TC = 100° C

IEBO

Emitter Cut-off Current

VBE = 5V, IC = 0

2

mA

hFE

DC Current Gain : MJE800/802

VCE = 3V, IC = 1.5A

750

: MJE801/803

VCE = 3V, IC = 2A

750

: ALL DEVICES

VCE = 3V, IC = 4A

100

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 1.5A, IB = 30mA

2.5

V

: MJE800/802

: MJE801/803

IC = 2A, IB = 40mA

2.8

V

: ALL DEVICES

IC = 4A, IB = 40mA

3

V

VBE(on)

Base-Emitter ON Voltage

VCE = 3V, IC = 1.5A

2.5

V

: MJE800/802

: MJE801/803

VCE = 3V, IC = 2A

2.5

V

: ALL DEVICES

VCE = 3V, IC = 4A

3

V

MJE800/801/802/803

©2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

Typical Characteristics

	5
							A
					IB=	500
CURRENT	4		IB= 450 A		IB= 300		A
		IB= 400 A
							A
		IB= 350 A			IB= 250
						A
					IB= 200
	3				IB= 150		A
(A),COLLECTOR
					IB= 100 A
	2
	1				IB= 50 A
C
I
	0
	0	1	2	3	4		5

VCE(V),COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VOLTAGE	100
				IC = 500 IB
SATURATION	10
(sat)[V],			VBE(sat)
	1
CE			VCE(sat)
(sat), V
BE
V	0.1
	0.01	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

	100
CURRENT	10			100
			1ms	s
COLLECTOR
			5ms
		D
		.
		C
		.
	1
[A],		MJE800/801
C
I
		MJE802/803
	0.1
	1	10		100	1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

GAINCURRENT	10000				MJE800/801/802/803
				VCE = 3V
	1000
DC,	100
FE
h
	10
	0.01	0.1	1		10
		IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

	1000
					f=0.1MHZ
					IE=0
CAPACITANCE	100
[pF],	10
ob
C
	1
	0.01	0.1	1	10	100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

	60
	50
DISSIPATION	40
	30
[W], POWER	20
C	10
P
	0
	0	25	50	75	100	125	150	175
			TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001