Fairchild Semiconductor MB8S, MB6S, MB4S, MB2S, MB1S Datasheet

MB1S - MB8S

Features

•	Low leakage
•	Surge overload rating:
	35 amperes peak.
•	Ideal for printed circuit board.	SOIC-4
		Polarity symbols molded
		or marking on body

4

3

––	+
~	~
1	2

0.031(0.8)

0.0191(0.5)

0.106(2.7)

0.09(2.3)

0.193(4.9)

0.177(4.5)

	1	:	~	0.106(2.7)	0.118(3.0)
			~	0.09(2.3)
	2	:			MAX
	3	:	+		0.008(0.2)
	4	:	––
				0.275(7)MAX
			0.067(1.7)	0.165(4.2)	0.067(1.7)
			0.057(1.3)	0.150(3.8)	0.057(1.3)
	0.051(1.3)				C0.02(0.5)
	0.035(0.9)

0.014(0.35)

0.006(0.15)

0.043(1.1)	Dimensions are in:
0.027(0.7)	inches (mm)

0.5 Ampere Glass Passivated Bridge Rectifiers

Absolute Maximum Ratings*				TA = 25°C unless otherwise noted
Symbol		Parameter				Value		Units
IO	Average Rectified Current					0.5		A
		@ TA = 50°C
if(surge)	Peak Forward Surge Current
		8.3 ms single half-sine-wave				35		A
		Superimposed on rated load (JEDEC method)
PD	Total Device Dissipation					1.4		W
		Derate above 25°C				11		mW/°C
RθJA	Thermal Resistance, Junction to Ambient,** per leg					85		°C/W
RθJL	Thermal Resistance, Junction to Lead,** per leg					20		°C/W
Tstg	Storage Tem perature Range					-55 to +150		°C
TJ	Operating Junction Tem perature					-55 to +150		°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
Electrical Characteristics			TA = 25°C unless otherwise noted
	Parameter			Device				Units
			1S	2S	4S	6S	8S
Peak Repetitive Reverse Voltage			100	200	400	600	800	V
Maximum RMS Bridge Input Voltage			70	140	280	420	560	V
DC Reverse Voltage		(Rated VR)	100	200	400	600	800	V
Maximum Reverse Leakage,
per leg @ rated VR		°			5.0			μ
		TA = 25 C			0.5			A
		TA = 125°C						mA
Maximum Forward Voltage Drop,
per bridge		@ 0.5 A			1.0			V
I t rating for fusing		t < 8.3 ms			5.0			A t
Typical Junction Capacitance, per leg					13			pF
VR = 4.0 V, f = 1.0 MHz

MB8S - MB1S

ã1999 Fairchild Semiconductor Corporation

MB1S-MB8S, Rev. A