Siemens BCX70K, BCX70J, BCX70H, BCX70G, BCW60FF Datasheet

NPN Silicon AF Transistors	BCW 60
	BCX 70

●For AF input stages and driver applications

●High current gain

●Low collector-emitter saturation voltage

●Low noise between 30 Hz and 15 kHz

●Complementary types: BCW 61, BCX 71 (PNP)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

BCW 60 A

AAs

Q62702-C1517

SOT-23

B

E

C

BCW 60 B

ABs

Q62702-C1497

BCW 60 C

ACs

Q62702-C1476

BCW 60 D

ADs

Q62702-C1477

BCW 60 FF

AFs

Q62702-C1529

BCW 60 FN

ANs

Q62702-C1567

BCX 70 G

AGs

Q62702-C1539

BCX 70 H

AHs

Q62702-C1481

BCX 70 J

AJs

Q62702-C1552

BCX 70 K

AKs

Q62702-C1571

1) For detailed information see chapter Package Outlines.

Semiconductor Group

1

5.91

BCW 60

BCX 70

Maximum Ratings

Parameter	Symbol			Values			Unit
		BCW 60		BCW 60 FF		BCX 70
Collector-emitter voltage	VCE0	32		32		45	V
Collector-base voltage	VCB0	32		32		45
Emitter-base voltage	VEB0		5
Collector current	IC		100				mA
Peak collector current	ICM		200
Peak base current	IBM		200
Total power dissipation, TS = 71 ˚C	Ptot		330				mW
Junction temperature	Tj		150				˚C
Storage temperature range	Tstg		– 65 … + 150
Thermal Resistance
Junction - ambient1)	Rth JA			≤ 310			K/W
Junction - soldering point	Rth JS			≤ 240

1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

BCW 60

BCX 70

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage		V(BR)CE0				V
IC = 10 mA	BCW 60, BCW 60 FF		32	–	–
	BCX 70		45	–	–
Collector-base breakdown voltage		V(BR)CB0
IC = 10 μA	BCW 60, BCW 60 FF		32	–	–
	BCX 70		45	–	–
Emitter-base breakdown voltage		V(BR)EB0	5	–	–
IE = 1 μA
Collector cutoff current		ICB0
VCB = 32 V	BCW 60, BCW 60 FF		–	–	20	nA
VCB = 45 V	BCX 70		–	–	20	nA
VCB = 32 V, TA = 150 ˚C	BCW 60, BCW 60 FF		–	–	20	μA
VCB = 45 V, TA = 150 ˚C	BCX 70		–	–	20	μA
Emitter cutoff current		IEB0	–	–	20	nA
VEB = 4 V
DC current gain 1)		hFE				–
IC = 10 μA, VCE = 5 V			20	140	–
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H			20	200	–
BCW 60 FF, BCW 60 C, BCX 70 J			40	300	–
BCW 60 FN, BCW 60 D, BCX 70 K			100	460	–
IC = 2 mA, VCE = 5 V			120	170	220
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H			180	250	310
BCW 60 FF, BCW 60 C, BCX 70 J			250	350	460
BCW 60 FN, BCW 60 D, BCX 70 K			380	500	630
IC = 50 mA, VCE = 1 V			50	–
BCW 60 A, BCX 70 G					–
BCW 60 B, BCX 70 H			70	–	–
BCW 60 FF, BCW 60 C, BCX 70 J			90	–	–
BCW 60 FN, BCW 60 D, BCX 70 K			100	–	–

1) Pulse test: t ≤ 300 μs, D ≤ 2 %.
Semiconductor Group	3