Siemens BFY183S, BFY183P, BFY183H, BFY183ES Datasheet

HiRel NPN Silicon RF Transistor		BFY 183
Features
• HiRel Discrete and Microwave Semiconductor
•	For low noise, high gain broadband amplifiers at
	collector currents from 2 mA to 30 mA
• Hermetically sealed microwave package
• fT = 8 GHz, F = 2.3 dB at 2 GHz
•	qualified
• ESA/SCC Detail Spec. No.: 5611/006		Micro-X1

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type	Marking		Ordering Code		Pin Configuration				Package
BFY 183 (ql)	−		see below		C	E	B	E	Micro-X1
(ql) Quality Level:		P: Professional Quality,		Ordering Code: Q62702F1609
		H: High Rel Quality,		Ordering Code: on request
		S: Space Quality,		Ordering Code: on request
		ES: ESA Space Quality,		Ordering Code: Q62702F1713

(see Chapter Order Instructions for ordering example)
Table 1	Maximum Ratings
Parameter		Symbol	Limit Values	Unit
Collector-emitter voltage		VCEO	12	V
Collector-emitter voltage, VBE = 0		VCES	20	V
Collector-base voltage		VCBO	20	V
Emitter-base voltage		VEBO	2	V
Collector current		IC	65	mA
Base current		I	5 1)	mA
		B
Total power dissipation, T ≤ 99 °C 2)		P	450	mW
	S	tot
Junction temperature		Tj	200	°C
Operating temperature range		Top	− 65 … + 200	°C
Storage temperature range		Tstg	− 65 … + 200	°C
Thermal Resistance
Junction soldering point 2)		R	< 255	K/W
		th JS

1)The maximum permissible base current for VFBE measurements is 20 mA (spot measurement duration < 1 s).

2)TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

1

Draft A03 1998-04-01

BFY 183

Electrical Characteristics

Table 2 DC Characteristics at TA = 25 °C unless otherwise specified

Parameter			Symbol		Limit Values			Unit
				min.		typ.	max.
Collector-base cutoff current			ICBO	−		−	100	μA
VCB = 20 V, IE = 0
Collector-emitter cutoff current			ICEX	−		−	300	μA
V	CE	= 12 V, I = 0.3 μA 3)
		B
Collector-base cutoff current			ICBO	−		−	50	nA
VCB = 10 V, IE = 0
Emitter-base cutoff current			IEBO	−		−	25	μA
VEB = 2 V, IC = 0
Emitter-base cutoff current			IEBO	−		−	0.5	μA
VEB = 1 V, IC = 0
Base-emitter forward voltage			VFBE	−		−	1	V
IE = 30 mA, IC = 0
DC current gain			hFE	55		90	160	−
IC = 5 mA, VCE = 6 V
3)	This test assures V(BR)CE0 > 12 V.

Semiconductor Group

2

Draft A03 1998-04-01