NPN Silicon Double Transistors |
BCV 61 |
Preliminary Data
●To be used as a current mirror
●Good thermal coupling and VBE matching
●High current gain
●Low emitter-saturation voltage
Type |
Marking |
Ordering Code |
Pin Configuration |
Package1) |
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(tape and reel) |
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BCV 61 A |
1Js |
Q62702-C2155 |
|
SOT-143 |
BCV 61 B |
1Ks |
Q62702-C2156 |
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BCV 61 C |
1Ls |
Q62702-C2157 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Collector-emitter voltage |
VCE0 |
30 |
V |
(transistor T1) |
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Collector-base voltage (open emitter) |
VCB0 |
30 |
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(transistor T1) |
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Emitter-base voltage |
VEBS |
6 |
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Collector current |
IC |
100 |
mA |
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Collector peak current |
ICM |
200 |
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Base peak current (transistor T1) |
IBM |
200 |
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Total power dissipation, TS ≤ 99 ˚C2) |
Ptot |
300 |
mW |
Junction temperature |
Tj |
150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
≤ 240 |
K/W |
Junction - soldering point |
Rth JS |
≤ 170 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics for transistor T1 |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
30 |
– |
– |
V |
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IC = 10 mA, IB = 0 |
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Collector-base breakdown voltage |
V(BR)CB0 |
30 |
– |
– |
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IC = 10 μA, IB = 0 |
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Emitter-base breakdown voltage |
V(BR)EBS |
6 |
– |
– |
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IE = 10 μA, IC = 0 |
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Collector-base cutoff current |
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ICB0 |
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VCB = 30 V, IE = 0 |
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– |
– |
15 |
nA |
VCB = 30 V, IE = 0, TA = 150 ˚C |
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– |
– |
5 |
μA |
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DC current gain1) |
|
hFE |
100 |
– |
|
– |
IC = 0.1 mA, VCE = 5 V |
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IC = 2 mA, VCE = 5 V |
BCV 61 A |
|
110 |
180 |
220 |
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BCV 61 B |
|
200 |
290 |
450 |
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BCV 61 C |
|
420 |
520 |
800 |
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Collector-emitter saturation voltage1) |
VCEsat |
– |
90 |
250 |
mV |
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IC = 10 mA, IB = 0.5 mA |
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IC = 100 mA, IB = 5 mA |
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– |
200 |
600 |
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Base-emitter saturation voltage1) |
VBEsat |
– |
700 |
– |
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IC = 10 mA, IC = 0.5 mA |
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IC = 100 mA, IC = 5 mA |
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– |
900 |
– |
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Base-emitter voltage |
|
VBE |
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IC = 2 mA, VCE = 5 V |
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580 |
660 |
700 |
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IC = 10 mA, VCE = 5 V |
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– |
– |
770 |
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1) Pulse test conditions: t ≤ 300 μs, D = 2 %. |
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Semiconductor Group |
2 |
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