Siemens BCV49, BCV29 Datasheet

NPN Silicon Darlington Transistors	BCV 29
	BCV 49

●For general AF applications

●High collector current

●High current gain

●Complementary types: BCV 28, BCV 48 (PNP)

Type

Marking

Ordering Code

Pin Configuration

Package1)

(tape and reel)

1

2

3

4

BCV 29

EF

Q62702-C1853

SOT-89

B

C

E

C

BCV 49

EG

Q62702-C1832

Maximum Ratings

Parameter

Symbol

Values

Unit

BCV 29

BCV 49

Collector-emitter voltage

VCE0

30

60

V

Collector-base voltage

VCB0

40

80

Emitter-base voltage

VEB0

10

10

Collector current

IC

500

mA

Peak collector current

ICM

800

Base current

IB

100

Peak base current

IBM

200

Total power dissipation, TS = 130 ˚C

P1tot

1

W

Junction temperature

Tj

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 75

K/W

Junction - soldering point

Rth JS

≤ 20

1)For detailed information see chapter Package Outlines.

2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

BCV 29

BCV 49

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter			Symbol		Values		Unit
				min.	typ.	max.
DC characteristics
Collector-emitter breakdown voltage			V(BR)CE0				V
IC = 10 mA
	BCV 29			30	–	–
	BCV 49			60	–	–
Collector-base breakdown voltage			V(BR)CB0
IC = 100 μA
	BCV 29			40	–	–
	BCV 49			80	–	–
Emitter-base breakdown voltage, IE = 10 μA			V(BR)EB0	10	–	–
Collector cutoff current			ICB0
VCB = 30 V	BCV 29			–	–	100	nA
VCB = 60 V	BCV 49			–	–	100	nA
VCB = 30 V, TA = 150 ˚C	BCV 29			–	–	10	μA
VCB = 60 V, TA = 150 ˚C	BCV 49			–	–	10	μA
Emitter cutoff current, VEB = 4 V			IEB0	–	–	100	nA
DC current gain1)			hFE				–
IC = 100 μA, VCE = 1 V	BCV 29			4000	–	–
	BCV 49			2000	–	–
IC = 10 mA, VCE = 5 V	BCV 29			10000	–	–
	BCV 49			4000	–	–
IC = 100 mA, VCE = 5 V	BCV 29			20000	–	–
	BCV 49			10000	–	–
IC = 0.5 A, VCE = 5 V	BCV 29			4000	–	–
	BCV 49			2000	–	–
Collector-emitter saturation voltage1)			VCEsat	–	–	1	V
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)			VBEsat	–	–	1.5
IC = 100 mA; IB = 0.1 mA
AC characteristics
Transition frequency			fT	–	150	–	MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance			Cobo	–	3.5	–	pF
VCB = 10 V, f = 1 MHz
1) Pulse test: t ≤ 300 μs, D = 2 %.
Semiconductor Group		2