1) |
â |
BTS 131 |
TEMPFET |
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Features
●N channel
●Logic level
●Enhancement mode
●Temperature sensor with thyristor characteristic
●The drain pin is electrically shorted to the tab
1 2 3 |
Pin |
1 |
2 |
3 |
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G |
D |
S |
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Type |
VDS |
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ID |
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RDS(on) |
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Package |
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Ordering Code |
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BTS 131 |
50 V |
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25 A |
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0.06 Ω |
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TO-220AB |
C67078-A5002-A4 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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Drain-source voltage |
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VDS |
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50 |
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V |
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Drain-gate voltage, RGS = 20 kΩ |
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VDGR |
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50 |
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Gate-source voltage |
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VGS |
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± 10 |
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Continuous drain current, TC = 25 °C |
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ID |
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25 |
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A |
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ISO drain current |
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ID-ISO |
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6.5 |
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TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V |
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Pulsed drain current, |
TC = 25 °C |
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ID puls |
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100 |
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Short circuit current, |
Tj = – 55 ... + 150 °C |
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ISC |
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80 |
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Short circuit dissipation, |
Tj = – 55 ... + 150 °C |
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PSCmax |
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1200 |
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W |
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Power dissipation |
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Ptot |
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75 |
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Operating and storage temperature range |
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Tj, Tstg |
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– 55 ... + 150 |
°C |
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DIN humidity category, DIN 40 040 |
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– |
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E |
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– |
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IEC climatic category, DIN IEC 68-1 |
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– |
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55/150/56 |
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Thermal resistance |
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≤ 1.67 |
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K/W |
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Chip-case |
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Rth JC |
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Chip-ambient |
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Rth JA |
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≤ 75 |
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1 |
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Semiconductor Group |
1 |
04.97 |
BTS 131
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Drain-source breakdown voltage |
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V(BR)DSS |
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V |
VGS = 0, ID = 0.25 mA |
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50 |
– |
– |
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Gate threshold voltage |
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VGS(th) |
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VGS = VDS, ID = 1 mA |
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1.5 |
2.0 |
2.5 |
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Zero gate voltage drain current |
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I DSS |
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mA |
VGS = 0 V, VDS = 50 V |
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Tj = 25 °C |
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– |
1 |
10 |
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Tj = 125 °C |
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– |
100 |
300 |
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Gate-source leakage current |
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I GSS |
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VGS = 20 V, VDS = 0 |
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Tj = 25 °C |
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– |
10 |
100 |
nA |
Tj = 150 °C |
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– |
2 |
4 |
mA |
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Drain-source on-state resistance |
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RDS(on) |
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W |
VGS = 4.5 V, ID =12 A |
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– |
0.05 |
0.06 |
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Dynamic Characteristics |
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Forward transconductance |
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gfs |
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S |
VDS ³ 2 ´ ID ´ RDS(on)max, ID = 12 A |
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12 |
17 |
22 |
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Input capacitance |
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Ciss |
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pF |
VGS = 0, VDS = 25 V, f = 1 MHz |
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800 |
1050 |
1400 |
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Output capacitance |
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Coss |
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VGS = 0, VDS = 25 V, f = 1 MHz |
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– |
500 |
750 |
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Reverse transfer capacitance |
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Crss |
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VGS = 0, VDS = 25 V, f = 1 MHz |
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– |
200 |
300 |
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Turn-on time ton, (ton = td(on) + tr) |
= 50 W |
td(on) |
– |
25 |
40 |
ns |
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS |
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tr |
– |
60 |
90 |
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Turn-off time toff, (toff = td(off) + tf) |
= 50 W |
td(off) |
– |
100 |
130 |
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VCC = 30 V, VGS = 5 V, ID = 3 A, RGS |
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tf |
– |
75 |
95 |
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Semiconductor Group |
2 |
BTS 131
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Reverse Diode |
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Continuous source current |
IS |
– |
– |
25 |
A |
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Pulsed source current |
ISM |
– |
– |
100 |
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Diode forward on-voltage |
VSD |
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V |
I F = 50 A, VGS = 0 |
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– |
1.5 |
2.0 |
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Reverse recovery time |
trr |
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ns |
I F = I S, diF/dt = 100 A/μs, VR = 30 V |
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– |
150 |
– |
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Reverse recovery charge |
Qrr |
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μC |
I F = I S, diF/dt = 100 A/μs, VR = 30 V |
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– |
1.0 |
– |
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Temperature Sensor |
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Forward voltage |
VTS(on) |
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V |
I TS(on) = 5 mA, Tj = – 55 ... + 150 °C |
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– |
1.3 |
1.4 |
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Sensor override, tp ≤ 100 μs |
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Tj = – 55 ... + 160 °C |
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– |
– |
10 |
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Forward current |
ITS(on) |
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mA |
Tj = – 55 ... + 150 °C |
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– |
– |
5 |
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Sensor override, tp ≤ 100 μs |
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Tj = – 55 ... + 160 °C |
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– |
– |
600 |
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Holding current, VTS(off) = 5 V, Tj = 25 °C |
IH |
0.05 |
0.1 |
0.5 |
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Tj = 150 °C |
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0.05 |
0.2 |
0.3 |
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Switching temperature |
TTS(on) |
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°C |
VTS = 5 V |
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150 |
– |
– |
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Turn-off time |
toff |
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μs |
VTS = 5 V, ITS(on) = 2 mA |
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0.5 |
– |
2.5 |
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Semiconductor Group |
3 |
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