Siemens BAS40-04W, BAS40-05W, BAS40-06W Datasheet

Silicon Schottky Diode

BAS 40W

●General-purpose diodes for high-speed switching

●Circuit protection

●Voltage clamping

●High-level detecting and mixing

Type	Ordering Code	Pin Configuration			Marking	Package1)
	(tape and reel)	1	2	3
BAS 40-04W	Q62702-A1065	A1	C1	C1/A2	44s	SOT-323
BAS 40-05W	Q62702-A1066	A1	A2	C1/C2	45s
BAS 40-06W	Q62702-A1067	C1	C2	A1/A2	46s

Maximum Ratings

Parameter	Symbol	Values	Unit
Reverse voltage	VR	40	V
Forward current	IF	120	mA
Surge forward current, t ≤ 10 ms	IFSM	200	mA
Total power dissipation TS ≤ 106 °C	Ptot	250	mW
Junction temperature	Tj	150	°C
Operating temperature range	Top	– 55 … + 150	°C
Storage temperature range	Tstg	– 55 … + 150	°C
Thermal Resistance
Junction-ambient2)	Rth JA	≤ 395	K/W
Junction-soldering point	Rth JS	≤ 175	K/W

1)For detailed information see chapter Package Outlines.

2)Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu.

Semiconductor Group

1

02.96

BAS 40W

Electrical Characteristics

at TA = 25 °C, unless otherwise specified.

Parameter	Symbol		Value		Unit
		min.	typ.	max.
DC Characteristics
Breakdown voltage	V(BR)				V
I(BR) = 10 μA		40	–	–
Forward voltage	VF				mV
IF = 1 mA		250	310	380
IF = 10 mA		350	450	500
IF = 15 mA		600	720	1000
Reverse current	IR				μA
VR = 30 V		–	–	1
VR = 40 V		–	–	10
Diode capacitance	CT				pF
VR = 0 V, f = 1 MHz		–	3	5
Charge carrier life time IF = 25 mA	τ	–	10	–	ps
Differential forward resistance	RF				Ω
IF = 10 mA, f = 10 kHz		–	10	–
Series inductance	LS	–	2	–	nH

Semiconductor Group

2