BAT 64
Silicon Schottky Diodes
Preliminary data
•For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
•Integrated diffused guard ring
•Low forward voltage
Pin Configuration
BAT 64-04 |
BAT64-05 |
BAT64-06 |
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type |
Marking |
Ordering Code |
Pin Configuration |
|
|
Package |
|
|
|
|
|
|
|
|
|
BAT 64 |
63s |
Q62702-A879 |
1 = A |
|
3 |
= C |
SOT-23 |
|
|
|
|
|
|
|
|
BAT 64-04 |
64s |
Q62702-A961 |
1 = A |
2 = C |
3 |
= C/A |
SOT-23 |
|
|
|
|
|
|
|
|
BAT 64-05 |
65s |
Q62702-A962 |
1 = A |
2 = A |
3 |
= C/C |
SOT-23 |
|
|
|
|
|
|
|
|
BAT 64-06 |
66s |
Q62702-A963 |
1 = C |
2 = C |
3 |
= A/A |
SOT-23 |
|
|
|
|
|
|
|
|
Maximum Ratings
Parameter |
|
Symbol |
|
Values |
Unit |
|
|
|
|
|
|
|
|
Diode reverse voltage |
VR |
|
40 |
V |
|
|
Forward current |
|
IF |
|
250 |
mA |
|
Average forward current (50/60Hz, sinus) |
IFAV |
|
120 |
|
|
|
Surge forward current (t ≤ 10ms) |
IFSM |
|
800 |
|
|
|
Total Power dissipation |
Ptot |
|
|
mW |
||
TS = 61 °C |
|
|
|
250 |
|
|
Junction temperature |
Tj |
|
150 |
°C |
||
Storage temperature |
Tstg |
|
- 55 ... + 150 |
|
|
|
Thermal Resistance |
|
|
|
|
|
|
|
|
|
|
|
|
|
Junction ambient |
1) |
RthJA |
|
≤ 495 |
K/W |
|
|
|
|||||
Junction - soldering point |
RthJS |
|
≤ 355 |
|
|
|
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu |
|
|
|
|||
Semiconductor Group |
1 |
|
|
Jan-31-1997 |
||
Loading...