BPX 43
NPN-Silizium-Fototransistor |
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BPX 43 |
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Silicon NPN Phototransistor |
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fmof6019
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
●Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
●Hohe Linearität
●Hermetisch dichte Metallbauform (TO-18) mit Basisanschluβ, geeignet bis 125 °C
●Gruppiert lieferbar
Anwendungen
●Lichtschranken für Gleichund Wechsellichtbetrieb
●Industrieelektronik
●“Messen/Steuern/Regeln”
Typ |
Bestellnummer |
Type |
Ordering Code |
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BPX43 |
Q62702-P16 |
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BPX 43-2 |
Q62702-P16-S2 |
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BPX 43-3 |
Q62702-P16-S3 |
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BPX 43-4 |
Q62702-P16-S4 |
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BPX 43-5 |
Q 62702-P16-S5 |
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Features
●Especially suitable for applications from 450 nm to 1100 nm
●High linearity
●Hermetically sealed metal package (TO-18) with base connection suitable up to 125 °C
●Available in groups
Applications
●Photointerrupters
●Industrial electronics
●For control and drive circuits
Semiconductor Group |
223 |
10.95 |
BPX 43
Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Wert |
Einheit |
Description |
Symbol |
Value |
Unit |
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Betriebsund Lagertemperatur |
Top; Tstg |
– 55 ... + 125 |
°C |
Operating and storage temperature range |
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Löttemperatur bei Tauchlötung |
TS |
260 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 5 s |
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Dip soldering temperature ³ 2 mm distance |
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from case bottom, soldering time t £ 5 s |
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Löttemperatur bei Kolbenlötung |
TS |
300 |
°C |
Lötstelle ³ 2 mm vom Gehäuse, |
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Lötzeit t £ 3 s |
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Iron soldering temperature ³ 2 mm distance |
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from case bottom, soldering time t £ 3 s |
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Kollektor-Emitterspannung |
VCE |
50 |
V |
Collector-emitter voltage |
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Kollektorstrom |
IC |
50 |
mA |
Collector current |
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Kollektorspitzenstrom, t < 10 ms |
ICS |
200 |
mA |
Collector surge current |
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Emitter-Basisspannung |
VEB |
7 |
V |
Emitter-base voltage |
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Verlustleistung, TA = 25 °C |
Ptot |
220 |
mW |
Total power dissipation |
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Wärmewiderstand |
RthJA |
450 |
K/W |
Thermal resistance |
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Semiconductor Group |
224 |
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