BDP 951
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
Type |
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Marking |
Ordering Code |
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Pin Configuration |
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Package |
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BDP 951 |
BDP 951 |
Q62702-D1339 |
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1 = B |
2 = C |
3 = E |
4 = C |
SOT-223 |
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BDP 953 |
BDP 953 |
Q62702-D1341 |
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1 = B |
2 = C |
3 = E |
4 = C |
SOT-223 |
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BDP 955 |
PDP 955 |
Q62702-D1343 |
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1 = B |
2 = C |
3 = E |
4 = C |
SOT-223 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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Collector-emitter voltage |
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VCEO |
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V |
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BDP |
951 |
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80 |
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BDP |
953 |
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100 |
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BDP |
955 |
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120 |
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Collector-base voltage |
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VCBO |
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BDP |
951 |
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100 |
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BDP |
953 |
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120 |
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BDP |
955 |
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140 |
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Emitter-base voltage |
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VEBO |
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5 |
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DC collector current |
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IC |
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3 |
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A |
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Peak collector current |
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ICM |
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5 |
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Base current |
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IB |
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200 |
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mA |
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Peak base current |
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IBM |
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500 |
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Total power dissipation, TS = 99°C |
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Ptot |
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3 |
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W |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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- 65 ... + 150 |
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Thermal Resistance |
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Junction ambient |
1) |
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RthJA |
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≤ 42 |
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K/W |
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Junction - soldering point |
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RthJS |
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≤ 17 |
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1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu |
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Semiconductor Group |
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1 |
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Nov-28-1996 |
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BDP 951
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC Characteristics |
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Collector-emitter breakdown voltage |
V(BR)CEO |
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V |
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IC = 10 mA, IB = 0 mA, BDP |
951 |
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80 |
- |
- |
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IC = 10 mA, IB = 0 mA, BDP |
953 |
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100 |
- |
- |
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IC = 10 mA, IB = 0 mA, BDP |
955 |
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120 |
- |
- |
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Collector-base breakdown voltage |
V(BR)CBO |
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IC 100 µA, IB = 0 , BDP |
951 |
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100 |
- |
- |
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IC = 100 µA, IB = 0 , BDP |
953 |
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120 |
- |
- |
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IC = 100 µA, IB = 0 , BDP |
955 |
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140 |
- |
- |
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Base-emitter breakdown voltage |
V(BR)EBO |
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IE = 10 µA, IC = 0 |
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5 |
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- |
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Collector cutoff current |
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ICBO |
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VCB = 100 V, IE = 0 , TA = 25 °C |
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100 |
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nA |
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VCB = 100 V, IE = 0 , TA = 150 °C |
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20 |
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µA |
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Emitter cutoff current |
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IEBO |
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nA |
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VEB = 4 V, IC = 0 |
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- |
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100 |
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DC current gain |
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hFE |
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- |
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IC = 10 mA, VCE = 5 V |
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25 |
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- |
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IC = 500 mA, VCE = 1 V |
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40 |
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475 |
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IC = 2 A, VCE = 2 V |
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15 |
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- |
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Collector-emitter saturation voltage 1) |
VCEsat |
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V |
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IC = 2 A, IB = 0.2 A |
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- |
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0.8 |
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Base-emitter saturation voltage 1) |
VBEsat |
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IC = 2 A, IB = 0.2 A |
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- |
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1.5 |
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AC Characteristics |
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Transition frequency |
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fT |
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MHz |
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IC = 50 mA, VCE = 10 V, f = 100 MHz |
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100 |
- |
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Collector-base capacitance |
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Ccb |
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pF |
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VCB = 10 V, f = 1 MHz |
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25 |
- |
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1) Pulse test: t < 300μs; D < 2% |
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Semiconductor Group |
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2 |
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Nov-28-1996 |
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