BAS 125W
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection, bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W |
BAS 125-04W |
BAS 125-06W |
ESD: ElectroStatic |
Discharge sensitive device, observe handling precautions! |
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Type |
Marking |
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Ordering Code |
Pin Configuration |
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Package |
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BAS 125-04W |
14s |
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Q62702- |
1 = A1 |
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2 = C2 |
3=C1/A2 |
SOT-323 |
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BAS 125-05W |
15s |
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Q62702- |
1 = A1 |
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2 = A2 |
3=C1/C2 |
SOT-323 |
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BAS 125-06W |
16s |
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Q62702- |
1 = C1 |
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2 = C2 |
3=A1/A2 |
SOT-323 |
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BAS 125W |
13s |
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Q62702- |
1 = A |
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3 = C |
SOT-323 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
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Unit |
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Diode reverse voltage |
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VR |
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25 |
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V |
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Forward current |
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IF |
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100 |
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mA |
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Surge forward current (t ≤ 10ms) |
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IFSM |
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500 |
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Total Power dissipation |
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Ptot |
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mW |
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TS ≤ 25 °C |
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250 |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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- 55 ... + 150 |
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Thermal Resistance |
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Junction ambient, BAS125W |
1) |
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RthJA |
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≤ 310 |
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K/W |
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Junction ambient, BAS 125-04W...06W 1) |
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RthJA |
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≤ 425 |
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Junction - soldering point, BAS125W |
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RthJS |
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≤ 230 |
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Junction - soldering point, BAS125-04W...06W |
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RthJS |
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≤ 265 |
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1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group |
1 |
Dec-20-1996 |
BAS 125W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Reverse current |
IR |
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nA |
VR = 20 V |
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- |
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150 |
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VR = 25 V |
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- |
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200 |
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Forward voltage |
VF |
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mV |
IF = 1 mA |
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385 |
400 |
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IF = 10 mA |
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530 |
650 |
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IF = 35 mA |
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800 |
900 |
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AC Characteristics |
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Diode capacitance |
CT |
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pF |
VR = 0 V, f = 1 MHz |
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1.1 |
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Differential forward resistance |
RF |
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Ω |
IF = 5 mA, f = 10 kHz |
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16 |
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Semiconductor Group |
2 |
Dec-20-1996 |
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