BUZ 102
SIPMOS ®Power Transistor
•N channel
•Enhancement mode
•Avalanche-rated
•dv/dt rated
•Low on-resistance
•175°C operating temperature
• also in TO-220 SMD available |
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Pin 1 |
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Pin 2 |
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Pin 3 |
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G |
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Type |
VDS |
ID |
RDS(on) |
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Package |
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Ordering Code |
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BUZ 102 |
50 V |
42 A |
0.023 Ω |
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TO-220 AB |
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C67078-S1351-A2 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
Unit |
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Continuous drain current |
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ID |
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A |
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TC = 111 °C |
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42 |
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Pulsed drain current |
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IDpuls |
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TC = 25 °C |
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168 |
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Avalanche energy, single pulse |
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EAS |
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mJ |
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ID = 42 A, VDD = 25 V, RGS = 25 Ω |
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L = 102 µH, Tj = 25 °C |
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180 |
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Reverse diode dv/dt |
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dv/dt |
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kV/µs |
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IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs |
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Tjmax = 175 °C |
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6 |
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Gate source voltage |
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VGS |
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± 20 |
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V |
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Power dissipation |
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Ptot |
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W |
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TC = 25 °C |
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200 |
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Operating temperature |
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Tj |
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-55 ... + 175 |
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°C |
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Storage temperature |
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Tstg |
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-55 ... + 175 |
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Thermal resistance, chip case |
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RthJC |
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≤ 0.83 |
K/W |
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Thermal resistance, chip to ambient |
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RthJA |
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≤ 75 |
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DIN humidity category, DIN 40 040 |
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E |
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IEC climatic category, DIN IEC 68-1 |
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55 / 175 / 56 |
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Semiconductor Group |
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1 |
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07/96 |
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BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Drainsource breakdown voltage |
V(BR)DSS |
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V |
VGS = 0 V, ID, Tj = -40 °C |
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50 |
- |
- |
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Gate threshold voltage |
VGS(th) |
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VGS=VDS, ID = 1 mA |
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2.1 |
3 |
4 |
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Zero gate voltage drain current |
IDSS |
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VDS = 50 V, VGS = 0 V, Tj = 25 °C |
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0.1 |
1 |
µA |
VDS = 50 V, VGS = 0 V, Tj = -40 °C |
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1 |
100 |
nA |
VDS = 50 V, VGS = 0 V, Tj = 150 °C |
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10 |
100 |
µA |
Gate-source leakage current |
IGSS |
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nA |
VGS = 20 V, VDS = 0 V |
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10 |
100 |
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Drain-Source on-resistance |
RDS(on) |
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Ω |
VGS = 10 V, ID = 42 A |
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0.017 |
0.023 |
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Semiconductor Group |
2 |
07/96 |
BUZ 102
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Dynamic Characteristics |
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Transconductance |
gfs |
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S |
VDS³ 2 * ID * RDS(on)max, ID = 42 A |
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10 |
28 |
- |
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Input capacitance |
Ciss |
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pF |
VGS = 0 V, VDS = 25 V, f = 1 MHz |
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- |
1620 |
2160 |
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Output capacitance |
Coss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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550 |
825 |
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Reverse transfer capacitance |
Crss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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240 |
360 |
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Turn-on delay time |
td(on) |
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ns |
VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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25 |
38 |
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Rise time |
tr |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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95 |
140 |
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Turn-off delay time |
td(off) |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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300 |
400 |
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Fall time |
tf |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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160 |
215 |
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Semiconductor Group |
3 |
07/96 |
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