BUZ71AL
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 71 AL
Not for new design
Pin 1 Pin 2 Pin 3
G D S
Type
BUZ 71 AL 50 V 13 A 0.12
V
DS
I
D
R
DS(on)
Ω
Package Ordering Code
TO-220 AB C67078-S1326-A3
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
Avalanche energy, single pulse
I
= 14 A,
D
L
= 30.6 µH,
V
DD
T
= 25 V,
= 25 °C
j
R
GS
= 25
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
V
gs
A
13
52
14
1 mJ
6
± 14 V
±
20
Power dissipation
T
= 25 °C
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
P
T
T
R
R
tot
j
stg
thJC
thJA
40
-55 ... + 150 °C
-55 ... + 150
≤ 3.1 K/W
≤
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group
1 07/96
W
BUZ 71 AL
Not for new design
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 50 V,
= 50 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-resistance
V
= 5 V,
GS
I
= 7 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
50 - -
1.2 1.6 2
-
-
0.1
10
1
100
- 10 100
- 0.09 0.12
V
µA
nA
Ω
Semiconductor Group 2 07/96
BUZ 71 AL
Not for new design
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
≥ 2
DS
I
*
D * RDS(on)max, ID
= 7 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
= 3 A
D
Rise time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
S
5 9.5 -
pF
- 510 680
- 210 320
- 85 130
ns
- 15 25
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
= 3 A
D
I
= 3 A
D
I
= 3 A
D
t
d(off)
t
f
- 70 100
- 70 90
- 50 70
Semiconductor Group 3 07/96
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