Siemens BCW66F, BCW65C, BCW65B, BCW65A, BCW66H Datasheet
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NPN Silicon AF Transistors |
BCW 65 |
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BCW 66 |
●For general AF applications
●High current gain
●Low collector-emitter saturation voltage
●Complementary types: BCW 67, BCW 68 (PNP)
Type |
Marking |
Ordering Code |
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Pin Configuration |
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Package1) |
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(tape and reel) |
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BCW 65 A |
EAs |
Q62702-C1516 |
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SOT-23 |
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B |
E |
C |
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BCW 65 B |
EBs |
Q62702-C1612 |
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BCW 65 C |
ECs |
Q62702-C1479 |
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BCW 66 F |
EFs |
Q62702-C1892 |
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BCW 66 G |
EGs |
Q62702-C1526 |
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BCW 66 H |
EHs |
Q62702-C1632 |
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1) For detailed information see chapter Package Outlines.
Semiconductor Group |
1 |
5.91 |
BCW 65
BCW 66
Maximum Ratings
Parameter |
Symbol |
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Values |
Unit |
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BCW 65 |
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BCW 66 |
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Collector-emitter voltage |
VCE0 |
32 |
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45 |
V |
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Collector-base voltage |
VCB0 |
60 |
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75 |
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Emitter-base voltage |
VEB0 |
5 |
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5 |
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Collector current |
IC |
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800 |
mA |
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Peak collector current |
ICM |
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1 |
A |
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Base current |
IB |
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100 |
mA |
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Peak base current |
IBM |
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200 |
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Total power dissipation, TS = 79 ˚C |
Ptot |
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330 |
mW |
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Junction temperature |
Tj |
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150 |
˚C |
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Storage temperature range |
Tstg |
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– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient1) |
Rth JA |
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≤ 285 |
K/W |
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Junction - soldering point |
Rth JS |
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≤ 215 |
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1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
2 |
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