HiRel NPN Silicon RF Transistor |
BFY 180 |
Features
•HiRel Discrete and Microwave Semiconductor
•For low power amplifiers at collector currents from 0.2 to 2.5 mA
•Hermetically sealed microwave package
•fT = 6.5 GHz, F = 2.6 dB at 2 GHz
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qualified
• ESA/SCC Detail Spec. No.: 5611/006 |
Micro-X1 |
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ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type |
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Marking |
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Ordering Code |
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Pin Configuration |
Package |
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BFY 180 (ql) |
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see below |
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C |
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E |
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B |
E |
Micro-X1 |
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(ql) Quality Level: P: Professional Quality, |
Ordering Code: Q97301013 |
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H: High Rel Quality, |
Ordering Code: on request |
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S: Space Quality, |
Ordering Code: on request |
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ES: ESA Space Quality, |
Ordering Code: Q97111419 |
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(see Chapter Order Instructions for ordering example) |
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Table 1 |
Maximum Ratings |
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Parameter |
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Symbol |
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Limit Values |
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Unit |
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Collector-emitter voltage |
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VCEO |
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8 |
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V |
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Collector-emitter voltage, VBE = 0 |
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VCES |
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15 |
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V |
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Collector-base voltage |
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VCBO |
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15 |
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V |
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Emitter-base voltage |
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VEBO |
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2 |
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V |
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Collector current |
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IC |
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4 |
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mA |
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Base current |
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I |
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0.5 1) |
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mA |
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B |
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Total power dissipation, T |
≤ 176 °C 2) |
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P |
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30 |
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mW |
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S |
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tot |
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Junction temperature |
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Tj |
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200 |
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°C |
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Operating temperature range |
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Top |
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− 65 … + 200 |
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°C |
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Storage temperature range |
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Tstg |
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− 65 … + 200 |
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°C |
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Thermal Resistance |
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Junction soldering point 2) |
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R |
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< 805 |
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K/W |
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th JS |
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1)The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s).
2)TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group |
1 |
Draft A04 1998-04-01 |
BFY 180
Electrical Characteristics
Table 2 DC Characteristics at TA = 25 °C unless otherwise specified
Parameter |
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Limit Values |
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min. |
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typ. |
max. |
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Collector-base cutoff current |
ICBO |
− |
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100 |
μA |
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VCB = 10 V, IE = 0 |
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Collector-emitter cutoff current |
ICEX |
− |
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50 |
μA |
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V |
CE |
= 8 V, I = 0.05 μA 3) |
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B |
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Collector-base cutoff current |
ICBO |
− |
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50 |
nA |
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VCB = 8 V, IE = 0 |
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Emitter-base cutoff current |
IEBO |
− |
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25 |
μA |
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VEB = 2 V, IC = 0 |
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Emitter-base cutoff current |
IEBO |
− |
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0.5 |
μA |
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VEB = 1 V, IC = 0 |
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Base-emitter forward voltage |
VFBE |
− |
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1 |
V |
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IE = 3 mA, IC = 0 |
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DC current gain |
hFE |
30 |
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100 |
175 |
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IC = 0.25 mA, VCE = 1 V |
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3) |
This test assures V(BR)CE0 > 8 V. |
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Semiconductor Group |
2 |
Draft A04 1998-04-01 |
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