PROFET® BTS 442 E2
Smart Highside Power Switch
Features |
Product Summary |
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· Overload protection |
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Overvoltage protection |
Vbb(AZ) |
63 |
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V |
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· Current limitation |
Operating voltage |
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Vbb(on) |
4.5 ... 42 V |
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· Short-circuit protection |
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On-state resistance |
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RON |
18 |
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mΩ |
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· Thermal shutdown |
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· Overvoltage protection (including load dump) |
Load current (ISO) |
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IL(ISO) |
21 |
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A |
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· Fast demagnetization of inductive loads |
Current limitation |
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IL(SCr) |
70 |
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A |
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· Reverse battery protection1) |
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· Undervoltage and overvoltage shutdown with |
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auto-restart and hysteresis |
TO-220AB/5 |
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· Open drain diagnostic output |
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· Open load detection in ON-state |
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· CMOS compatible input |
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· Loss of ground and loss of Vbb protection2) |
5 |
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5 |
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· Electrostatic discharge (ESD) protection |
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5 |
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1 |
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Standard |
Straight leads |
SMD |
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Application
·mC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
·All types of resistive, inductive and capacitve loads
·Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions.
Voltage
source
V Logic
Voltage
sensor
2 |
IN |
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ESD |
Logic |
4 |
ST |
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Rbb |
+ Vbb |
3 |
Overvoltage |
Current |
Gate |
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protection |
limit |
protection |
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Charge pump |
Limit for |
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OUT |
5 |
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Level shifter |
unclamped |
Temperature |
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ind. loads |
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Rectifier |
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sensor |
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Open load |
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Load |
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detection |
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Short circuit |
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detection |
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PROFETâ |
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GND |
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1 |
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Signal GND |
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Load GND |
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1)No external components required, reverse load current limited by connected load.
2)Additional external diode required for charged inductive loads
Semiconductor Group |
1 |
04.96 |
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BTS 442 E2 |
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Pin |
Symbol |
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Function |
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1 |
GND |
- |
Logic ground |
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2 |
IN |
I |
Input, activates the power switch in case of logical high signal |
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3 |
Vbb |
+ |
Positive power supply voltage, |
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the tab is shorted to this pin |
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4 |
ST |
S |
Diagnostic feedback, low on failure |
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5 |
OUT |
O |
Output to the load |
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(Load, L) |
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Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter |
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Symbol |
Values |
Unit |
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Supply voltage (overvoltage protection see page 3) |
Vbb |
63 |
V |
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Load dump protection VLoadDump = UA + Vs, UA = 13.5 V |
VLoad dump3) |
80 |
V |
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RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high |
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Load current (Short-circuit current, see page 4) |
IL |
self-limited |
A |
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Operating temperature range |
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Tj |
-40 ...+150 |
°C |
Storage temperature range |
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Tstg |
-55 ...+150 |
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Power dissipation (DC) |
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Ptot |
167 |
W |
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Inductive load switch-off energy dissipation, |
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single pulse |
Tj=150 °C: |
EAS |
2.1 |
J |
Electrostatic discharge capability (ESD) |
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VESD |
2.0 |
kV |
(Human Body Model) |
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Input voltage (DC) |
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VIN |
-0.5 ... +6 |
V |
Current through input pin (DC) |
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IIN |
±5.0 |
mA |
Current through status pin (DC) |
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IST |
±5.0 |
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see internal circuit diagrams page 6... |
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Thermal resistance |
chip - case: |
RthJC |
≤ 0.75 |
K/W |
junction - ambient (free air): |
RthJA |
≤ 75 |
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SMD version, device on pcb4): |
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≤ tbd |
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3)VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) |
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm |
2 |
(one layer, 70μm thick) copper area for Vbb |
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connection. PCB is vertical without blown air.
Semiconductor Group |
2 |
BTS 442 E2
Electrical Characteristics
Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 12 V unless otherwise specified |
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min |
typ |
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max |
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Load Switching Capabilities and Characteristics |
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On-state resistance (pin 3 to 5) |
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IL = 5 A |
Tj=25 °C: |
RON |
-- |
15 |
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18 |
mΩ |
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Tj=150 °C: |
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28 |
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35 |
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Nominal load current (pin 3 to 5) |
IL(ISO) |
17 |
21 |
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-- |
A |
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ISO Proposal: VON = 0.5 V, |
TC = 85 °C |
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Output current (pin 5) while GND disconnected or |
IL(GNDhigh) |
-- |
-- |
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1 |
mA |
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GND pulled up, VIN= 0, see diagram page 7, |
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Tj =-40...+150°C |
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Turn-on time |
to 90% VOUT: |
ton |
100 |
-- |
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350 |
μs |
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Turn-off time |
to 10% VOUT: |
toff |
10 |
-- |
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130 |
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RL = 12 Ω, Tj =-40...+150°C |
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Slew rate on |
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dV /dton |
0.2 |
-- |
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2 |
V/μs |
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10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C |
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Slew rate off |
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-dV/dtoff |
0.4 |
-- |
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5 |
V/μs |
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70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C |
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Operating Parameters |
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Operating voltage 5) |
T =-40...+150°C: |
V |
bb(on) |
4.5 |
-- |
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42 |
V |
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j |
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Undervoltage shutdown |
Tj =-40...+150°C: |
Vbb(under) |
2.4 |
-- |
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4.5 |
V |
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Undervoltage restart |
Tj =-40...+150°C: |
Vbb(u rst) |
-- |
-- |
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4.5 |
V |
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Undervoltage restart of charge pump |
Vbb(ucp) |
-- |
6.5 |
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7.5 |
V |
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see diagram page 12 |
Tj =-40...+150°C: |
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Undervoltage hysteresis |
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Vbb(under) |
-- |
0.2 |
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-- |
V |
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Vbb(under) = Vbb(u rst) - Vbb(under) |
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Overvoltage shutdown |
Tj =-40...+150°C: |
Vbb(over) |
42 |
-- |
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52 |
V |
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Overvoltage restart |
Tj =-40...+150°C: |
Vbb(o rst) |
42 |
-- |
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-- |
V |
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Overvoltage hysteresis |
Tj =-40...+150°C: |
Vbb(over) |
-- |
0.2 |
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-- |
V |
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Overvoltage protection6) |
Tj =-40°C: |
Vbb(AZ) |
60 |
-- |
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-- |
V |
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Ibb=40 mA |
Tj =25...+150°C: |
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63 |
67 |
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Standby current (pin 3) |
Tj=-40...+25°C : |
Ibb(off) |
-- |
12 |
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25 |
μA |
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VIN=0 |
Tj=150°C: |
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-- |
18 |
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60 |
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Leakage output current (included in Ibb(off)) |
IL(off) |
-- |
6 |
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-- |
μA |
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VIN=0 |
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Operating current (Pin 1)7), VIN=5 V |
IGND |
-- |
1.1 |
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-- |
mA |
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5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
6)see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) |
Add |
IST, if IST > 0, add |
IIN, if VIN>5.5 V |
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Semiconductor Group |
3 |
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BTS 442 E2
Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 12 V unless otherwise specified |
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min |
typ |
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max |
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Protection Functions |
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Initial peak short circuit current limit (pin 3 to 5)8), |
IL(SCp) |
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( max 400 μs if VON > VON(SC) ) |
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Tj =-40°C: |
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-- |
-- |
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140 |
A |
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Tj =25°C: |
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-- |
95 |
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-- |
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Tj =+150°C: |
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45 |
-- |
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-- |
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Repetitive short circuit current limit |
IL(SCr) |
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Tj = Tjt (see timing diagrams, page 10) |
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30 |
70 |
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-- |
A |
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Short circuit shutdown delay after input pos. slope |
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VON > VON(SC), |
Tj =-40..+150°C: |
td(SC) |
80 |
-- |
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400 |
μs |
min value valid only, if input "low" time exceeds 30 μs |
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Output clamp (inductive load switch off) |
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at VOUT = Vbb - VON(CL), IL= 30 mA |
VON(CL) |
-- |
58 |
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-- |
V |
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Short circuit shutdown detection voltage |
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(pin 3 to 5) |
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VON(SC) |
-- |
8.3 |
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-- |
V |
Thermal overload trip temperature |
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Tjt |
150 |
-- |
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-- |
°C |
Thermal hysteresis |
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Tjt |
-- |
10 |
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-- |
K |
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Inductive load switch-off energy dissipation9), |
EAS |
-- |
-- |
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2.1 |
J |
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Tj Start = 150 °C, single pulse |
Vbb = 12 V: |
ELoad12 |
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1.7 |
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Vbb = 24 V: |
ELoad24 |
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1.2 |
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Reverse battery (pin 3 to 1) 10) |
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-Vbb |
-- |
-- |
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32 |
V |
Integrated resistor in Vbb line |
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Rbb |
-- |
120 |
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-- |
Ω |
Diagnostic Characteristics |
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Open load detection current |
Tj=-40 °C : |
IL (OL) |
2 |
-- |
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1900 |
mA |
(on-condition) |
Tj=25..150°C: |
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2 |
-- |
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1500 |
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8) Short circuit current limit for max. duration of td(SC) max=400 μs, prior to shutdown
9)While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx.
2 |
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VON(CL) |
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EAS= 1/2 * L * IL |
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VON(CL) - Vbb |
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10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Semiconductor Group |
4 |
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