Siemens BCX79-X, BCX79-VIII, BCX79-VII, BCX79-IX, BCX79 Datasheet

PNP Silicon AF Transistors	BCX 78
	BCX 79

●High current gain

●Low collector-emitter saturation voltage

●Low noise at 1 kHz

● Low noise at low frequencies
● Complementary types: BCX 58, BCX 59 (NPN)	2
	3
	1

Type

Marking

Ordering Code

Pin Configuration

Package1)

1

2

3

BCX 78

–

Q62702-C717

TO-92

C

B

E

BCX 78-VII

Q62702-C626

BCX 78-VIII

Q62702-C627

BCX 78-IX

Q62702-C628

BCX 78-X

Q62702-C629

BCX 79

Q62702-C718

BCX 79-VII

Q62702-C630

BCX 79-VIII

Q62702-C631

BCX 79-IX

Q62702-C632

BCX 79-X

Q62702-C633

1) For detailed information see chapter Package Outlines.

Semiconductor Group

1

5.91

BCX 78

BCX 79

Maximum Ratings

Parameter	Symbol		Values		Unit
		BCX 78		BCX 79
Collector-emitter voltage	VCE0	32		45	V
Collector-base voltage	VCB0	32		45
Emitter-base voltage	VEB0		5
Collector current	IC		100		mA
Peak collector current	ICM		200
Peak base current	IBM		200
Total power dissipation, TC = 70 ˚C	Ptot		500		mW
Junction temperature	Tj		150		˚C
Storage temperature range	Tstg		– 65 … + 150
Thermal Resistance
Junction - ambient	Rth JA		≤ 250		K/W
Junction - case1)	Rth JC		≤ 160

1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group

2

									BCX 78
									BCX 79
	Electrical Characteristics
	at TA = 25 ˚C, unless otherwise specified.
	Parameter				Symbol		Values			Unit
						min.	typ.	max.
	DC characteristics
	Collector-emitter breakdown voltage				V(BR)CE0					V
	IC = 2 mA		BCX 78			32	–	–
			BCX 79			45	–	–
	Collector-base breakdown voltage				V(BR)CB0
	IC = 10 μA		BCX 78			32	–	–
			BCX 79			45	–	–
	Emitter-base breakdown voltage				V(BR)EB0	5	–	–
	IE = 1 μA
	Collector cutoff current				ICB0
	VCB = 32 V		BCX 78			–	–	20		nA
	VCB = 45 V		BCX 79			–	–	20		nA
	VCB = 32 V, TA = 150 ˚C		BCX 78			–	–	10		μA
	VCB = 45 V, TA = 150 ˚C		BCX 79			–	–	10		μA
	Collector cutoff current				ICE0					μA
	VCB = 32 V, VBE = 0.2 V,TA = 100 ˚C					–	–	20
	VCB = 45 V, VBE = 0.2 V,TA = 100 ˚C					–	–	20
	Emitter cutoff current				IEB0	–	–	20		nA
	VEB = 4 V
	DC current gain				hFE					–
	IC = 10 μA, VCE = 5 V					20	140	–
		BCX 78 VII,	BCX 79 VII
		BCX 78 VIII, BCX 79 VIII				30	200	–
		BCX 78 IX,	BCX 79 IX			40	270	–
		BCX 78 X,	BCX 79 X			100	340	–
	IC = 2 mA, VCE = 5 V					120	170
		BCX 78 VII,	BCX 79 VII					220
		BCX 78 VIII, BCX 79 VIII				180	250	310
		BCX 78 IX,	BCX 79 IX			250	350	460
		BCX 78 X,	BCX 79 X			380	500	630
	IC = 100 mA, VCE = 1 V1)					40	–	–
		BCX 78 VII,	BCX 79 VII
		BCX 78 VIII, BCX 79 VIII				45	–	–
		BCX 78 IX,	BCX 79 IX			60	–	–
		BCX 78 X,	BCX 79 X			60	–	–
	1) Pulse test: t ≤ 300 μs, D ≤ 2 %.
	Semiconductor Group			3