PNP Silicon AF Transistor |
BCP 69 |
●For general AF application
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary type: BCP 68 (NPN)
Type |
Marking |
Ordering Code |
Pin Configuration |
Package1) |
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(tape and reel) |
1 |
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2 |
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3 |
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4 |
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BCP 69 |
BCP 69 |
Q62702-C2130 |
B |
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C |
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E |
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C |
SOT-223 |
BCP 69-10 |
BCP 69-10 |
Q62702-C2131 |
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BCP 69-16 |
BCP 69-16 |
Q62702-C2132 |
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BCP 69-25 |
BCP 69-25 |
Q62702-C2133 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Collector-emitter voltage |
VCE0 |
20 |
V |
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VCES |
25 |
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Collector-base voltage |
VCB0 |
25 |
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Emitter-base voltage |
VEB0 |
5 |
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Collector current |
IC |
1 |
A |
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Peak collector current |
ICM |
2 |
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Base current |
IB |
100 |
mA |
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Peak base current |
IBM |
200 |
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Total power dissipation, TS = 124 ˚C2) |
Ptot |
1.5 |
W |
Junction temperature |
Tj |
150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
≤ 72 |
K/W |
Junction - soldering point |
Rth JS |
≤ 17 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
01.97 |
BCP 69
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
20 |
– |
– |
V |
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IC = 30 mA, IB = 0 |
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Collector-emitter breakdown voltage |
V(BR)CES |
25 |
– |
– |
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IC = 10 μA, VBE = 0 |
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Collector-base breakdown voltage |
V(BR)CB0 |
25 |
– |
– |
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IC = 10 μA, IB = 0 |
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Emitter-base breakdown voltage |
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V(BR)EB0 |
5 |
– |
– |
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IE = 10 μA, IB = 0 |
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Collector-base cutoff current |
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ICB0 |
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VCB = 25 V |
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– |
– |
100 |
nA |
VCB = 25 V, TA = 150 ˚C |
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– |
– |
100 |
μA |
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Emitter-base cutoff current |
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IEB0 |
– |
– |
100 |
nA |
VEB = 5 V, IC = 0 |
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DC current gain1) |
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hFE |
50 |
– |
– |
– |
IC = 5 mA, VCE = 10 V |
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IC = 500 mA, VCE = 1 V |
BCP 69 |
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85 |
– |
375 |
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BCP 69-10 |
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85 |
100 |
160 |
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BCP 69-16 |
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100 |
160 |
250 |
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BCP 69-25 |
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160 |
250 |
375 |
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IC = 1 A, VCE = 1 V |
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60 |
– |
– |
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Collector-emitter saturation voltage1) |
VCEsat |
– |
– |
0.5 |
V |
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IC = 1 A, IB = 100 mA |
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Base-emitter voltage1) |
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VBE |
– |
0.6 |
– |
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IC = 5 mA, VCE = 10 V |
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IC = 1 A, VCE = 1 V |
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– |
– |
1 |
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AC characteristics |
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Transition frequency |
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fT |
– |
100 |
– |
MHz |
IC = 100 mA, VCE = 5 V, f = 100 MHz |
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1) Pulse test conditions: t ≤ 300 μs, D = 2 %. |
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Semiconductor Group |
2 |
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