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BAT 64...W |
Silicon Schottky Diodes |
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• For low-loss, fast-recovery, meter protection, |
3 |
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bias isolation and clamping applications |
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• Integrated diffused guard ring |
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• Low forward voltage |
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2 |
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1 |
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VSO05561 |
BAT 64W |
BAT 64-04W |
BAT 64-05W |
BAT 64-06W |
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type |
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Marking |
Ordering Code |
Pin Configuration |
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Package |
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BAT 64W |
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63s |
Q62702-A1159 |
1 |
= A |
2 n.c. |
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3 |
= C |
SOT-323 |
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BAT 64-04W |
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64s |
Q62702-A1160 |
1 |
= A1 |
2 = C2 |
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3 |
= C1/A2 |
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BAT 64-05W |
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65s |
Q62702-A1161 |
1 |
= A1 |
2 = A2 |
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3 |
= C1/2 |
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BAT 64-06W |
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66s |
Q62702-A1162 |
1 |
= C1 |
2 = C2 |
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3 |
= A1/2 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Value |
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Unit |
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Diode reverse voltage |
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VR |
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40 |
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V |
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Forward current |
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IF |
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250 |
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mA |
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Average forward current (50/60Hz, sinus) |
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IFAV |
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120 |
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Surge forward current (t< 100 s) |
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IFSM |
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800 |
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Total power dissipation |
BAT 64W, TS≤120°C |
Ptot |
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250 |
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mW |
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Total power dissipat. BAT64-04/06W, TS≤111°C |
Ptot |
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250 |
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Total power dissipation BAR 64-05W, TS≤104°C |
Ptot |
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250 |
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Junction temperature |
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Tj |
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150 |
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°C |
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Storage temperature |
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Tstg |
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-55...+150 |
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Semiconductor Group |
1 |
1 |
Sep-07-1998 |
Semiconductor Group |
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1998-11-01 |
BAT 64...W
Thermal Resistance
Junction - ambient |
1) |
BAT 64W |
R |
≤255 |
K/W |
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thJA |
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Junction - ambient |
1) |
BAT 64-04/06W |
R |
≤290 |
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thJA |
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Junction - ambient |
1) |
BAT 64-05W |
RthJA |
≤455 |
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Junction - soldering point |
BAT 64W |
RthJS |
≤120 |
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Junction - soldering point |
BAT 64-04/06W |
RthJS |
≤155 |
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Junction - soldering point |
BAT 64-05W |
RthJS |
≤185 |
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1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Reverse current |
IR |
- |
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2 |
µA |
VR = 30 V |
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Reverse current |
IR |
- |
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200 |
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VR = 30 V, TA = 85 °C |
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Forward voltage |
VF |
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mV |
IF = 1 mA |
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320 |
350 |
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IF = 10 mA |
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385 |
430 |
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IF = 30 mA |
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440 |
520 |
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IF = 100 mA |
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570 |
750 |
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AC characteristics |
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Diode capacitance |
CT |
- |
4 |
6 |
pF |
VR = 1 V, f = 1 MHz |
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Semiconductor Group |
2 |
2 |
Sep-07-1998 |
Semiconductor Group |
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1998-11-01 |