HiRel NPN Silicon RF Transistor |
BFY 182 |
•HiRel Discrete and Microwave Semiconductor
•For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA
•Hermetically sealed microwave package
•fT = 8 GHz, F = 2.4 dB at 2 GHz
• qualified
• ESA/SCC Detail Spec. No.: 5611/006 |
Micro-X1 |
|
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type |
Marking |
Ordering Code |
Pin Configuration |
Package |
|||||
|
|
|
|
|
|
|
|
|
|
BFY 182 (ql) |
− |
|
see below |
|
C |
E |
B |
E |
Micro-X1 |
|
|
|
|
|
|
|
|
|
|
(ql) Quality Level: |
P: Professional Quality, |
Ordering Code: Q62702F1608 |
|||||||
|
|
H: High Rel Quality, |
Ordering Code: on request |
|
|||||
|
|
S: Space Quality, |
Ordering Code: on request |
|
|||||
|
|
ES: ESA Space Quality, |
Ordering Code: Q62702F1714 |
(see Chapter Order Instructions for ordering example) |
|
|
||
Table 1 |
Maximum Ratings |
|
|
|
|
|
|
|
|
Parameter |
|
Symbol |
Limit Values |
Unit |
|
|
|
|
|
Collector-emitter voltage |
VCEO |
12 |
V |
|
Collector-emitter voltage, VBE = 0 |
VCES |
20 |
V |
|
Collector-base voltage |
VCBO |
20 |
V |
|
Emitter-base voltage |
VEBO |
2 |
V |
|
Collector current |
IC |
35 |
mA |
|
Base current |
|
I |
4 1) |
mA |
|
|
B |
|
|
Total power dissipation, T ≤ 136 °C 2) |
P |
250 |
mW |
|
|
S |
tot |
|
|
Junction temperature |
Tj |
200 |
°C |
|
Operating temperature range |
Top |
− 65 … + 200 |
°C |
|
Storage temperature range |
Tstg |
− 65 … + 200 |
°C |
|
Thermal Resistance |
|
|
|
|
|
|
|
|
|
Junction soldering point 2) |
R |
< 255 |
K/W |
|
|
|
th JS |
|
|
1)The maximum permissible base current for VFBE spot-measurements is 20 mA (duration < 1 s).
2)TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group |
1 |
Draft A04 1998-04-01 |
BFY 182
Table 2 DC Characteristics at TA = 25 °C unless otherwise specified
Parameter |
Symbol |
|
Limit Values |
Unit |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
min. |
|
typ. |
max. |
|
|
|
|
|
|
|
|
||
Collector-base cutoff current |
ICBO |
− |
|
− |
100 |
μA |
||
VCB = 20 V, IE = 0 |
|
|
|
|
|
|
||
Collector-emitter cutoff current |
ICEX |
− |
|
− |
200 |
μA |
||
V |
CE |
= 12 V, I = 0.2 μA 3) |
|
|
|
|
|
|
|
B |
|
|
|
|
|
|
|
Collector-base cutoff current |
ICBO |
− |
|
− |
50 |
nA |
||
VCB = 10 V, IE = 0 |
|
|
|
|
|
|
||
Emitter-base cutoff current |
IEBO |
− |
|
− |
25 |
μA |
||
VEB = 2 V, IC = 0 |
|
|
|
|
|
|
||
Emitter-base cutoff current |
IEBO |
− |
|
− |
0.5 |
μA |
||
VEB = 1 V, IC = 0 |
|
|
|
|
|
|
||
Base-emitter forward voltage |
VFBE |
− |
|
− |
1 |
V |
||
IE = 20 mA, IC = 0 |
|
|
|
|
|
|
||
DC current gain |
hFE |
55 |
|
100 |
170 |
− |
||
IC = 5 mA, VCE = 6 V |
|
|
|
|
|
|
||
3) |
This test assures V(BR)CE0 > 12 V. |
|
|
|
|
|
|
Semiconductor Group |
2 |
Draft A04 1998-04-01 |