PNP Silicon High-Voltage Transistors |
BFN 17 |
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BFN 19 |
●Suitable for video output stages in TV sets and switching power supplies
●High breakdown voltage
●Low collector-emitter saturation voltage
●Complementary types: BFN 16, BFN 18 (NPN)
Type |
Marking |
Ordering Code |
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Pin Configuration |
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Package1) |
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(tape and reel) |
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BFN 17 |
DG |
Q62702-F884 |
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SOT-89 |
B |
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C |
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E |
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BFN 19 |
DH |
Q62702-F1057 |
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Maximum Ratings
Parameter |
Symbol |
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Values |
Unit |
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BFN 17 |
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BFN 19 |
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Collector-emitter voltage |
VCE0 |
250 |
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300 |
V |
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Collector-base voltage |
VCB0 |
250 |
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300 |
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Emitter-base voltage |
VEB0 |
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5 |
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Collector current |
IC |
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200 |
mA |
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Peak collector current |
ICM |
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500 |
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Base current |
IB |
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100 |
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Peak base current |
IBM |
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200 |
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Total power dissipation, TS = 130 ˚C |
Ptot |
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1 |
W |
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Junction temperature |
Tj |
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150 |
˚C |
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Storage temperature range |
Tstg |
– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
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≤ 75 |
K/W |
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Junction - soldering point |
Rth JS |
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≤ 20 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
1 |
5.91 |
BFN 17
BFN 19
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
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V |
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IC = 1 mA |
BFN 17 |
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250 |
– |
– |
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BFN 19 |
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300 |
– |
– |
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Collector-base breakdown voltage |
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V(BR)CB0 |
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IC = 100 μA |
BFN 17 |
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250 |
– |
– |
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BFN 19 |
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300 |
– |
– |
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Emitter-base breakdown voltage |
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V(BR)EB0 |
5 |
– |
– |
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IE = 100 μA |
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Collector-base cutoff current |
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ICB0 |
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VCB = 200 V |
BFN 17 |
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– |
– |
100 |
nA |
VCB = 250 V |
BFN 19 |
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– |
– |
100 |
nA |
VCB = 200 V, TA = 150 ˚C |
BFN 17 |
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– |
– |
20 |
μA |
VCB = 250 V, TA = 150 ˚C |
BFN 19 |
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– |
– |
20 |
μA |
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Emitter-base cutoff current |
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IEB0 |
– |
– |
100 |
nA |
VEB = 3 V |
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DC current gain |
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hFE |
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– |
IC = 1 mA, VCE = 10 V |
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25 |
– |
– |
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IC = 10 mA, VCE = 10 V1) |
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40 |
– |
– |
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IC = 30 mA, VCE = 10 V1) |
BFN 17 |
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40 |
– |
– |
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BFN 19 |
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30 |
– |
– |
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Collector-emitter saturation voltage1) |
VCEsat |
– |
– |
0.4 |
V |
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IC = 20 mA, IB = 2 mA |
BFN 17 |
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BFN 19 |
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– |
– |
0.5 |
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Base-emitter saturation voltage1) |
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VBEsat |
– |
– |
0.9 |
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IC = 20 mA, IB = 2 mA |
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AC characteristics |
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Transition frequency |
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fT |
– |
100 |
– |
MHz |
IC = 20 mA, VCE = 10 V, f = 20 MHz |
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Output capacitance |
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Cobo |
– |
2.5 |
– |
pF |
VCB = 30 V, f = 1 MHz |
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1) Pulse test conditions: t ≤ 300 μs, D = 2 %. |
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Semiconductor Group |
2 |
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