BUZ 307
SIPMOS ®Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
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Pin 1 |
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Pin 2 |
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Pin 3 |
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G |
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D |
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S |
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Type |
VDS |
ID |
RDS(on) |
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Package |
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Ordering Code |
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BUZ 307 |
800 V |
3 A |
3 Ω |
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TO-218 AA |
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C67078-S3100-A2 |
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Maximum Ratings |
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Parameter |
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Symbol |
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Values |
Unit |
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Continuous drain current |
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ID |
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A |
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TC = 35 °C |
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3 |
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Pulsed drain current |
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IDpuls |
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TC = 25 °C |
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12 |
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Avalanche current,limited by Tjmax |
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IAR |
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3 |
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Avalanche energy,periodic limited by Tjmax |
EAR |
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8 |
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mJ |
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Avalanche energy, single pulse |
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EAS |
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ID = 3 A, VDD = 50 V, RGS = 25 Ω |
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L = 66.6 mH, Tj = 25 °C |
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320 |
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Gate source voltage |
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VGS |
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± 20 |
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V |
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Power dissipation |
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Ptot |
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W |
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TC = 25 °C |
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75 |
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Operating temperature |
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Tj |
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-55 ... + 150 |
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°C |
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Storage temperature |
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Tstg |
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-55 ... + 150 |
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Thermal resistance, chip case |
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RthJC |
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≤ 1.67 |
K/W |
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Thermal resistance, chip to ambient |
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RthJA |
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75 |
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DIN humidity category, DIN 40 040 |
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E |
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IEC climatic category, DIN IEC 68-1 |
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55 / 150 / 56 |
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Semiconductor Group |
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1 |
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09/96 |
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BUZ 307
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Static Characteristics |
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Drainsource breakdown voltage |
V(BR)DSS |
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V |
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C |
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800 |
- |
- |
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Gate threshold voltage |
VGS(th) |
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VGS=VDS, ID = 1 mA |
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2.1 |
3 |
4 |
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Zero gate voltage drain current |
IDSS |
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µA |
VDS = 800 V, VGS = 0 V, Tj = 25 °C |
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0.1 |
1 |
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VDS = 800 V, VGS = 0 V, Tj = 125 °C |
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10 |
100 |
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Gate-source leakage current |
IGSS |
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nA |
VGS = 20 V, VDS = 0 V |
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10 |
100 |
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Drain-Source on-resistance |
RDS(on) |
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Ω |
VGS = 10 V, ID = 1.5 A |
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2.7 |
3 |
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Semiconductor Group |
2 |
09/96 |
BUZ 307
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Dynamic Characteristics |
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Transconductance |
gfs |
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S |
VDS³ 2 * ID * RDS(on)max, ID = 1.5 A |
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1 |
1.8 |
- |
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Input capacitance |
Ciss |
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pF |
VGS = 0 V, VDS = 25 V, f = 1 MHz |
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1400 |
1860 |
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Output capacitance |
Coss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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- |
85 |
130 |
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Reverse transfer capacitance |
Crss |
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VGS = 0 V, VDS = 25 V, f = 1 MHz |
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30 |
45 |
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Turn-on delay time |
td(on) |
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ns |
VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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20 |
30 |
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Rise time |
tr |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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60 |
90 |
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Turn-off delay time |
td(off) |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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80 |
110 |
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Fall time |
tf |
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VDD = 30 V, VGS = 10 V, ID = 3 A |
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RGS = 50 W |
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50 |
65 |
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Semiconductor Group |
3 |
09/96 |
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